Search Results

There are 5401 results for: content related to: Interaction and electronic structures of oxygen divacancy in HfO 2

  1. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

    Advanced Materials

    Volume 27, Issue 11, March 18, 2015, Pages: 1811–1831, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Johannes Müller, Alfred Kersch, Uwe Schroeder, Thomas Mikolajick and Cheol Seong Hwang

    Version of Record online : 11 FEB 2015, DOI: 10.1002/adma.201404531

  2. Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

    Advanced Functional Materials

    Volume 24, Issue 32, August 27, 2014, Pages: 5086–5095, Jung Ho Yoon, Seul Ji Song, Il-Hyuk Yoo, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park and Cheol Seong Hwang

    Version of Record online : 26 MAY 2014, DOI: 10.1002/adfm.201400064

  3. Characterization of Hafnia Powder Prepared from an Oxychloride Sol–Gel

    Journal of the American Ceramic Society

    Volume 94, Issue 3, March 2011, Pages: 886–894, Catriona M. McGilvery, David W. McComb, Stefan De Gendt, E. Andrew Payzant, Maureen MacKenzie and Alan J. Craven

    Version of Record online : 11 NOV 2010, DOI: 10.1111/j.1551-2916.2010.04153.x

  4. Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices

    Advanced Functional Materials

    Volume 27, Issue 32, August 25, 2017, Sankaramangalam Ulhas Sharath, Stefan Vogel, Leopoldo Molina-Luna, Erwin Hildebrandt, Christian Wenger, Jose Kurian, Michael Duerrschnabel, Tore Niermann, Gang Niu, Pauline Calka, Michael Lehmann, Hans-Joachim Kleebe, Thomas Schroeder and Lambert Alff

    Version of Record online : 4 JUL 2017, DOI: 10.1002/adfm.201700432

  5. Synthesis and White Light Emission of Rare Earth-Doped HfO2 Nanotubes

    Journal of the American Ceramic Society

    Volume 94, Issue 7, July 2011, Pages: 2141–2145, Lixin Liu, Yuan Wang, Yurong Su, Ziwei Ma, Yizhu Xie, Haiting Zhao, Changcheng Chen, Zhenxing Zhang and Erqing Xie

    Version of Record online : 14 MAR 2011, DOI: 10.1111/j.1551-2916.2010.04375.x

  6. Simultaneous Modification of Bottom-Contact Electrode and Dielectric Surfaces for Organic Thin-Film Transistors Through Single-Component Spin-Cast Monolayers

    Advanced Functional Materials

    Volume 21, Issue 8, April 22, 2011, Pages: 1476–1488, Orb Acton, Manish Dubey, Tobias Weidner, Kevin M. O’Malley, Tae-Wook Kim, Guy G. Ting, Daniel Hutchins, J. E. Baio, Tracy C. Lovejoy, Alexander H. Gage, David G. Castner, Hong Ma and Alex K.-Y. Jen

    Version of Record online : 8 FEB 2011, DOI: 10.1002/adfm.201002035

  7. Comparative study of Al2O3, HfO2, and HfAlOx for improved self-compliance bipolar resistive switching

    Journal of the American Ceramic Society

    Volume 100, Issue 12, December 2017, Pages: 5638–5648, Andrey S. Sokolov, Seok Ki Son, Donghwan Lim, Hoon Hee Han, Yu-Rim Jeon, Jae Ho Lee and Changhwan Choi

    Version of Record online : 7 AUG 2017, DOI: 10.1111/jace.15100

  8. Enhanced Performance of Supported HfO2 Counter Electrodes for Redox Couples Used in Dye-Sensitized Solar Cells

    ChemSusChem

    Volume 7, Issue 2, February 2014, Pages: 442–450, Prof. Dr. Sining Yun, Dr. Haihui Pu, Prof. Junhong Chen, Prof. Anders Hagfeldt and Prof. Tingli Ma

    Version of Record online : 7 JAN 2014, DOI: 10.1002/cssc.201301140

  9. Investigation of Crystallization Processes from Hafnium Silicate Powders Prepared from an Oxychloride Sol-Gel

    Journal of the American Ceramic Society

    Volume 95, Issue 12, December 2012, Pages: 3985–3991, Catriona M. McGilvery, Stefan De Gendt, E. Andrew Payzant, Maureen MacKenzie, Alan J. Craven and David W. McComb

    Version of Record online : 13 SEP 2012, DOI: 10.1111/j.1551-2916.2012.05408.x

  10. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    Small

    Volume 11, Issue 34, September 9, 2015, Pages: 4341–4350, Bilal Ahmed, Dalaver H. Anjum, Mohamed N. Hedhili and Husam N. Alshareef

    Version of Record online : 10 JUN 2015, DOI: 10.1002/smll.201500919

  11. Change in crystalline structure and band alignment in atomic-layer-deposited HfO2 on InP using an annealing treatment

    physica status solidi (a)

    Volume 210, Issue 8, August 2013, Pages: 1612–1617, Yu-Seon Kang, Dae-Kyoung Kim, Mann-Ho Cho, Jung-Hye Seo, Hyun Kyong Shon, Tae Geol Lee, Young Dae Cho, Sun-Wook Kim, Dae-Hong Ko and Hyoungsub Kim

    Version of Record online : 22 APR 2013, DOI: 10.1002/pssa.201228628

  12. You have free access to this content
    Atomic Layer Deposition for Graphene Device Integration

    Advanced Materials Interfaces

    Volume 4, Issue 18, September 22, 2017, René H. J. Vervuurt, Wilhelmus M. M. (Erwin) Kessels and Ageeth A. Bol

    Version of Record online : 26 MAY 2017, DOI: 10.1002/admi.201700232

  13. Impact of native defects and impurities in m−HfO2 and β−Si3N4 on charge trapping memory devices: A first principle hybrid functional study

    physica status solidi (b)

    Volume 254, Issue 2, February 2017, Wenjuan Lu, Yuehua Dai, Feifei Wang and Bo Jin

    Version of Record online : 27 SEP 2016, DOI: 10.1002/pssb.201600360

  14. Thermal Expansion of HfO2 and ZrO2

    Journal of the American Ceramic Society

    Volume 97, Issue 7, July 2014, Pages: 2213–2222, Ryan P. Haggerty, Pankaj Sarin, Zlatomir D. Apostolov, Patrick E. Driemeyer and Waltraud M. Kriven

    Version of Record online : 28 MAY 2014, DOI: 10.1111/jace.12975

  15. SnO2 Anode Surface Passivation by Atomic Layer Deposited HfO2 Improves Li-Ion Battery Performance

    Small

    Volume 10, Issue 14, July 23, 2014, Pages: 2849–2858, Nulati Yesibolati, Muhammad Shahid, Wei Chen, M. N. Hedhili, M. C. Reuter, F. M. Ross and H. N. Alshareef

    Version of Record online : 14 MAR 2014, DOI: 10.1002/smll.201303898

  16. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

    Advanced Functional Materials

    Volume 22, Issue 11, June 6, 2012, Pages: 2412–2417, Stefan Mueller, Johannes Mueller, Aarti Singh, Stefan Riedel, Jonas Sundqvist, Uwe Schroeder and Thomas Mikolajick

    Version of Record online : 15 MAR 2012, DOI: 10.1002/adfm.201103119

  17. Multiphonon ionization of traps formed in hafnium oxide by electrical stress

    physica status solidi (a)

    Volume 210, Issue 2, February 2013, Pages: 361–366, A. L. Danilyuk, D. B. Migas, M. A. Danilyuk, V. E. Borisenko, X. Wu, N. Raghavan and K. L. Pey

    Version of Record online : 22 NOV 2012, DOI: 10.1002/pssa.201228083

  18. The application of low energy ion scattering spectroscopy (LEIS) in sub 28-nm CMOS technology

    Surface and Interface Analysis

    Volume 49, Issue 12, December 2017, Pages: 1175–1186, Kornelia Dittmar, Dina H. Triyoso, Elke Erben, Joachim Metzger, Robert Binder, Hidde H. Brongersma, Martin Weisheit and Hans-Jürgen Engelmann

    Version of Record online : 15 SEP 2017, DOI: 10.1002/sia.6312

  19. RRAMs based on anionic and cationic switching: a short overview

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 6, June 2014, Pages: 501–511, Sergiu Clima, Kiroubanand Sankaran, Yang Yin Chen, Andrea Fantini, Umberto Celano, Attilio Belmonte, Leqi Zhang, Ludovic Goux, Bogdan Govoreanu, Robin Degraeve, Dirk J. Wouters, Malgorzata Jurczak, Wilfried Vandervorst, Stefan De Gendt and Geoffrey Pourtois

    Version of Record online : 4 APR 2014, DOI: 10.1002/pssr.201409054

  20. Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO2 film on Ge substrate for interface passivation

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 9, September 2015, Pages: 511–515, Deok-Yong Cho, Tae Jun Seok, Hyun Soo Jin, Hochul Song, Seungwu Han and Tae Joo Park

    Version of Record online : 7 SEP 2015, DOI: 10.1002/pssr.201510237