Search Results

There are 47275 results for: content related to: Raman-scattering probe of anharmonic effects due to temperature and composition in InGaN

  1. Strain relaxation in thick (equation image) InGaN grown on GaN/Si substrate

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 468–471, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano and Nobuhiko Sawaki

    Version of Record online : 10 FEB 2012, DOI: 10.1002/pssb.201100445

  2. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

    physica status solidi (a)

    Volume 212, Issue 4, April 2015, Pages: 740–744, Suresh Sundaram, Renaud Puybaret, Xin Li, Youssef El Gmili, Jeremy Streque, Konstantinos Panztas, Gaelle Orsal, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini and Abdallah Ougazzaden

    Version of Record online : 11 MAR 2015, DOI: 10.1002/pssa.201400278

  3. Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 895–899, Matthias Finken, Ada Wille, Benjamin Reuters, Michael Heuken, Holger Kalisch and Andrei Vescan

    Version of Record online : 28 DEC 2014, DOI: 10.1002/pssb.201451576

  4. Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 774–777, A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, V. S. Sizov, A. L. Zakgeim, M. N. Mizerov, N. A. Cherkashin and M. Hytch

    Version of Record online : 24 NOV 2011, DOI: 10.1002/pssc.201100339

  5. Dielectric function and bowing parameters of InGaN alloys

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 485–488, E. Sakalauskas, Ö. Tuna, A. Kraus, H. Bremers, U. Rossow, C. Giesen, M. Heuken, A. Hangleiter, G. Gobsch and R. Goldhahn

    Version of Record online : 9 JAN 2012, DOI: 10.1002/pssb.201100334

  6. Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

    physica status solidi (a)

    Volume 208, Issue 1, January 2011, Pages: 195–198, Seoung-Hwan Park, Yong-Tae Moon, Jeong Sik Lee, Ho Ki Kwon, Joong Seo Park and Doyeol Ahn

    Version of Record online : 27 SEP 2010, DOI: 10.1002/pssa.201026420

  7. A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 866–872, Matthew J. Davies, Philip Dawson, Fabien C.-P. Massabuau, Adrian Le Fol, Rachel A. Oliver, Menno J. Kappers and Colin J. Humphreys

    Version of Record online : 14 NOV 2014, DOI: 10.1002/pssb.201451535

  8. InGaN quantum wells and dots on initially shaped GaN islands: Growth and luminescence studies

    physica status solidi (a)

    Volume 209, Issue 8, August 2012, Pages: 1445–1450, H. Xiong, G. B. Wang and Z. L. Fang

    Version of Record online : 10 MAY 2012, DOI: 10.1002/pssa.201228101

  9. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates

    physica status solidi (a)

    Zi-Hui Zhang, Yonghui Zhang, Wengang Bi, Hilmi Volkan Demir and Xiao Wei Sun

    Version of Record online : 27 JUN 2016, DOI: 10.1002/pssa.201600281

  10. Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

    physica status solidi (a)

    Volume 212, Issue 10, October 2015, Pages: 2205–2212, Zhilai Fang, Xiyang Shen, Zhengyuan Wu and Tong-Yi Zhang

    Version of Record online : 29 JUN 2015, DOI: 10.1002/pssa.201532246

  11. Hybrid InGaN/CdZnO quantum well structures for optoelectronic applications in the short wavelength spectral region

    physica status solidi (b)

    Volume 250, Issue 2, February 2013, Pages: 378–381, Seoung-Hwan Park and Doyeol Ahn

    Version of Record online : 9 NOV 2012, DOI: 10.1002/pssb.201248469

  12. Microstructural and compositional analyses of GaN-based nanostructures

    physica status solidi (b)

    Volume 248, Issue 8, August 2011, Pages: 1822–1836, Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta and Andreas Rosenauer

    Version of Record online : 21 JUL 2011, DOI: 10.1002/pssb.201147175

  13. Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD

    physica status solidi (a)

    Volume 209, Issue 3, March 2012, Pages: 434–438, Özgür Kelekçi, Pınar T. Taşlı, HongBo Yu, Mehmet Kasap, Süleyman Özçelik and Ekmel Özbay

    Version of Record online : 20 JAN 2012, DOI: 10.1002/pssa.201100313

  14. Assessment of factors limiting conversion efficiency of single-junction III-nitride solar cells

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 640–643, Kirill A. Bulashevich and Sergey Yu. Karpov

    Version of Record online : 22 JAN 2014, DOI: 10.1002/pssc.201300389

  15. MOCVD growth of InGaN:Mg for GaN/InGaN HBTs

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2157–2160, T. Chung, J.-B. Limb, U. Chowdhury, P. Li, J.-H. Ryou, D. Yoo, D. Zakharov, Z. Liliental-Weber and R. D. Dupuis

    Version of Record online : 7 FEB 2005, DOI: 10.1002/pssc.200461598

  16. Annealing effects on electrical, structural, and surface morphological properties of Ir/n-InGaN Schottky structures

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 2027–2033, V. Rajagopal Reddy, R. Padma, M. Siva Pratap Reddy and C.-J. Choi

    Version of Record online : 20 JUN 2012, DOI: 10.1002/pssa.201228224

  17. InGaN Nanowire Heterostructures

    Wide Band Gap Semiconductor Nanowires 2

    Vincent Consonni, Guy Feuillets, Pages: 41–60, 2014

    Published Online : 8 AUG 2014, DOI: 10.1002/9781118984291.ch2

  18. Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1033–1038, Masatomo Sumiya, Tohru Honda, Liwen Sang, Yoshitaka Nakano, Kenji Watanabe and Fumio Hasegawa

    Version of Record online : 18 FEB 2015, DOI: 10.1002/pssa.201431732

  19. Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

    physica status solidi (a)

    Volume 201, Issue 12, September 2004, Pages: 2818–2822, S.-Y. Kwon, M.-H. Cho, P. Moon, H. J. Kim, H. Na, H.-C. Seo, H. J. Kim, Y. Shin, D. W. Moon, Y. Sun, Y.-H. Cho and E. Yoon

    Version of Record online : 10 SEP 2004, DOI: 10.1002/pssa.200405076

  20. Growth behaviour of InGaN/GaN self-assembled quantum dots with different growth conditions in horizontal MOCVD

    physica status solidi (c)

    Volume 6, Issue 4, April 2009, Pages: 797–801, Woo-Gwang Jung, Jae-Min Jang, Seung-Kyu Choi and Jin-Yeol Kim

    Version of Record online : 12 DEC 2008, DOI: 10.1002/pssc.200880585