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There are 18258 results for: content related to: Hybrid InGaN/CdZnO quantum well structures for optoelectronic applications in the short wavelength spectral region

  1. A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 866–872, Matthew J. Davies, Philip Dawson, Fabien C.-P. Massabuau, Adrian Le Fol, Rachel A. Oliver, Menno J. Kappers and Colin J. Humphreys

    Version of Record online : 14 NOV 2014, DOI: 10.1002/pssb.201451535

  2. Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes

    physica status solidi (a)

    Volume 208, Issue 3, March 2011, Pages: 729–734, Jih-Yuan Chang, Yen-Kuang Kuo and Miao-Chan Tsai

    Version of Record online : 7 DEC 2010, DOI: 10.1002/pssa.201026369

  3. Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 925–929, Tongxing Yan, Juan He, Wei Yang, Kamran Rajabi, Weihua Chen, Jiejun Wu, Xiangning Kang, Guoyi Zhang and Xiaodong Hu

    Version of Record online : 1 FEB 2015, DOI: 10.1002/pssa.201431642

  4. Theoretical studies of the influence of structural inhomogeneities on the radiative recombination time in polar InGaN quantum wells

    physica status solidi (a)

    Volume 209, Issue 4, April 2012, Pages: 752–760, Marta Gladysiewicz and Robert Kudrawiec

    Version of Record online : 1 FEB 2012, DOI: 10.1002/pssa.201127485

  5. You have full text access to this OnlineOpen article
    Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 928–935, F. C.-P. Massabuau, M. J. Davies, W. E. Blenkhorn, S. Hammersley, M. J. Kappers, C. J. Humphreys, P. Dawson and R. A. Oliver

    Version of Record online : 19 DEC 2014, DOI: 10.1002/pssb.201451543

  6. Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells

    physica status solidi (a)

    Volume 211, Issue 9, September 2014, Pages: 2157–2160, J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, L. C. Le, X. G. He, X. J. Li and H. Yang

    Version of Record online : 22 MAY 2014, DOI: 10.1002/pssa.201431086

  7. Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

    physica status solidi (a)

    Volume 208, Issue 1, January 2011, Pages: 195–198, Seoung-Hwan Park, Yong-Tae Moon, Jeong Sik Lee, Ho Ki Kwon, Joong Seo Park and Doyeol Ahn

    Version of Record online : 27 SEP 2010, DOI: 10.1002/pssa.201026420

  8. Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

    physica status solidi (a)

    Volume 206, Issue 11, November 2009, Pages: 2637–2640, Seoung-Hwan Park, Doyeol Ahn, Bun-Hei Koo and Jong-Wook Kim

    Version of Record online : 29 JUN 2009, DOI: 10.1002/pssa.200925020

  9. Development of semipolar laser diode

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 459–465, Dmitry Sizov, Rajaram Bhat, Jie Wang, Donald Allen, Barry Paddock and Chung-en Zah

    Version of Record online : 31 JAN 2013, DOI: 10.1002/pssa.201200629

  10. Green emission from semipolar InGaN quantum wells grown on low-defect (112¯2) GaN templates fabricated on patterned r-sapphire

    physica status solidi (b)

    Volume 253, Issue 1, January 2016, Pages: 105–111, P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zuniga-Perez

    Version of Record online : 19 NOV 2015, DOI: 10.1002/pssb.201552298

  11. Effects of AlGaN delta-layer insertion on light emission characteristics of ultraviolet AlGaN/AlN quantum well structures

    physica status solidi (b)

    Volume 252, Issue 8, August 2015, Pages: 1844–1847, Seoung-Hwan Park and Daewoong Suh

    Version of Record online : 23 MAR 2015, DOI: 10.1002/pssb.201552052

  12. Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11equation image2) and (10equation image1) pyramid facets

    physica status solidi (b)

    Volume 248, Issue 3, March 2011, Pages: 632–637, Sebastian Metzner, Frank Bertram, Christopher Karbaum, Thomas Hempel, Thomas Wunderer, Stephan Schwaiger, Frank Lipski, Ferdinand Scholz, Clemens Wächter, Michael Jetter, Peter Michler and Jürgen Christen

    Version of Record online : 28 JAN 2011, DOI: 10.1002/pssb.201046500

  13. Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes

    Advanced Functional Materials

    Volume 21, Issue 20, October 21, 2011, Pages: 3828–3835, Suman De, Arunasish Layek, Archana Raja, Abdul Kadir, Mahesh R. Gokhale, Arnab Bhattacharya, Subhabrata Dhar and Arindam Chowdhury

    Version of Record online : 11 AUG 2011, DOI: 10.1002/adfm.201100894

  14. Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

    physica status solidi (b)

    Volume 253, Issue 1, January 2016, Pages: 118–125, Silvio Neugebauer, Sebastian Metzner, Jürgen Bläsing, Frank Bertram, Armin Dadgar, Jürgen Christen and André Strittmatter

    Version of Record online : 30 NOV 2015, DOI: 10.1002/pssb.201552448

  15. Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations

    physica status solidi (a)

    Volume 208, Issue 11, November 2011, Pages: 2671–2675, M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Yu. Evstratov and S. Yu. Karpov

    Version of Record online : 7 JUL 2011, DOI: 10.1002/pssa.201127278

  16. Interdependency of surface morphology and wavelength fluctuations of indium-rich InGaN/GaN quantum wells

    physica status solidi (a)

    Volume 208, Issue 5, May 2011, Pages: 1199–1202, Teresa Lermer, Ines Pietzonka, Adrian Avramescu, Georg Brüderl, Jens Müller, Stephan Lutgen and Uwe Strauss

    Version of Record online : 12 JAN 2011, DOI: 10.1002/pssa.201000695

  17. Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

    physica status solidi (a)

    Volume 207, Issue 6, June 2010, Pages: 1383–1385, Alexander Polyakov, Anatoliy Govorkov, Nikolay Smirnov, Alexander Markov, In-Hwan Lee, Haeng-Keun Ahn, Sergey Karpov and Stephen Pearton

    Version of Record online : 12 MAY 2010, DOI: 10.1002/pssa.200983413

  18. Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1296–1301, Jeomoh Kim, Mi-Hee Ji, Theeradetch Detchprohm, Russell D. Dupuis, Shahab Shervin and Jae-Hyun Ryou

    Version of Record online : 22 DEC 2015, DOI: 10.1002/pssa.201532764

  19. Properties of trench defects in InGaN/GaN quantum well structures

    physica status solidi (a)

    Volume 210, Issue 1, January 2013, Pages: 195–198, S.-L. Sahonta, M. J. Kappers, D. Zhu, T. J. Puchtler, T. Zhu, S. E. Bennett, C. J. Humphreys and R. A. Oliver

    Version of Record online : 21 NOV 2012, DOI: 10.1002/pssa.201200408

  20. X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface

    physica status solidi (b)

    Fabien Massabuau, Nicolas Piot, Martin Frentrup, Xiuze Wang, Quentin Avenas, Menno Kappers, Colin Humphreys and Rachel Oliver

    Version of Record online : 6 JAN 2017, DOI: 10.1002/pssb.201600664