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There are 3965 results for: content related to: Short-period AlN/GaN p-type superlattices: hole transport use in p-n junctions

  1. Effect of potential fluctuations on photoluminescence in Mg-doped GaN

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2761–2764, M. A. Reshchikov, J. Xie, L. He, X. Gu, Y. T. Moon, Y. Fu and H. Morkoç

    Version of Record online : 1 FEB 2005, DOI: 10.1002/pssc.200461370

  2. Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture)

    Angewandte Chemie International Edition

    Volume 54, Issue 27, June 26, 2015, Pages: 7770–7788, Prof. Shuji Nakamura

    Version of Record online : 1 JUN 2015, DOI: 10.1002/anie.201500591

  3. Local vibrational modes and compensation effects in Mg-doped GaN

    physica status solidi (c)

    Volume 0, Issue 6, September 2003, Pages: 1783–1794, A. Hoffmann, A. Kaschner and C. Thomsen

    Version of Record online : 27 AUG 2003, DOI: 10.1002/pssc.200303120

  4. Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture)

    Annalen der Physik

    Volume 527, Issue 5-6, June 2015, Pages: 335–349, Shuji Nakamura

    Version of Record online : 9 APR 2015, DOI: 10.1002/andp.201500801

  5. Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy

    physica status solidi (c)

    Volume 4, Issue 1, January 2007, Pages: 133–136, K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee and M. Koike

    Version of Record online : 8 JAN 2007, DOI: 10.1002/pssc.200673506

  6. The Origin of Red Luminescence from Mg-Doped GaN

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 547–550, M.W. Bayerl, M.S. Brandt, E.R. Glaser, A.E. Wickenden, D.D. Koleske, R.L. Henry and M. Stutzmann

    Version of Record online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<547::AID-PSSB547>3.0.CO;2-8

  7. Electrical characteristics of low-Mg-doped p-AlGaN and p-InGaN Schottky contacts

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1031–1037, Toshichika Aoki, Sachi Tachibana and Kenji Shiojima

    Version of Record online : 13 FEB 2015, DOI: 10.1002/pssb.201451590

  8. Growth of AlxGa1—xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam Epitaxy

    physica status solidi (b)

    Volume 234, Issue 3, December 2002, Pages: 855–858, M. Konishi, T. Tanabe, S. Kubo, S. Kurai, T. Taguchi, K. Kainosho and A. Yokohata

    Version of Record online : 3 DEC 2002, DOI: 10.1002/1521-3951(200212)234:3<855::AID-PSSB855>3.0.CO;2-X

  9. Activation of Mg Acceptor in GaN : Mg with Pulsed KrF (248 nm) Excimer Laser Irradiation

    physica status solidi (b)

    Volume 228, Issue 2, November 2001, Pages: 375–378, Dong-Joon Kim, Hyun-Min Kim, Myung-Geun Han, Yong-Tae Moon, Seonghoon Lee and Seong-Ju Park

    Version of Record online : 13 NOV 2001, DOI: 10.1002/1521-3951(200111)228:2<375::AID-PSSB375>3.0.CO;2-A

  10. Blue Light: A Fascinating Journey (Nobel Lecture)

    Angewandte Chemie International Edition

    Volume 54, Issue 27, June 26, 2015, Pages: 7750–7763, Prof. Isamu Akasaki

    Version of Record online : 27 MAY 2015, DOI: 10.1002/anie.201502664

  11. Electrical properties of Mg-doped GaN and AlxGa1–xN

    physica status solidi (c)

    Volume 6, Issue S2, June 2009, Pages: S466–S469, Tatiana A. Komissarova, Valentin N. Jmerik, Andrey M. Mizerov, Nataliya M. Shmidt, Boris Ya. Ber, Dmitry Yu. Kasantsev and Sergey V. Ivanov

    Version of Record online : 26 JAN 2009, DOI: 10.1002/pssc.200880939

  12. Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method

    physica status solidi (c)

    Volume 12, Issue 4-5, April 2015, Pages: 338–340, J. Dashdorj, W. R. Willoughby, M. E. Zvanut and M. Bockowski

    Version of Record online : 18 MAR 2015, DOI: 10.1002/pssc.201400181

  13. Structural analysis of pyramidal defects in Mg-doped GaN

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1803–1806, A. Pretorius, M. Schowalter, N. Daneu, R. Kröger, A. Rečnik and A. Rosenauer

    Version of Record online : 18 MAY 2006, DOI: 10.1002/pssc.200565259

  14. Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1109–1115, Yingda Chen, Hualong Wu, Guanglong Yue, Zimin Chen, Zhiyuan Zheng, Zhisheng Wu, Gang Wang and Hao Jiang

    Version of Record online : 9 DEC 2014, DOI: 10.1002/pssb.201451489

  15. Effect of dimethylhydrazine on p-type conductivity of as-grown Mg-doped GaN

    physica status solidi (RRL) - Rapid Research Letters

    Volume 3, Issue 2-3, March 2009, Pages: 52–54, Dong Hyuk Kim, Go Eun Lee, Euijoon Yoon, Do-Young Park, Hyeonsik Cheong, Woo Seok Choi, Tae Won Noh, Jin-Hyoung Cho and Joong-Seo Park

    Version of Record online : 2 JAN 2009, DOI: 10.1002/pssr.200802255

  16. The role of vacancies in the red luminescence from Mg-doped GaN

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1919–1922, S. Zeng, G. N. Aliev, D. Wolverson, J. J. Davies, S. J. Bingham, D. A. Abdulmalik, P. G. Coleman, T. Wang and P. J. Parbrook

    Version of Record online : 12 MAY 2006, DOI: 10.1002/pssc.200565331

  17. Phase transition by Mg doping of N-face polarity GaN

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2216–2219, E. Sarigiannidou, E. Monroy, M. Hermann, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin and M. Eickhoff

    Version of Record online : 30 MAR 2005, DOI: 10.1002/pssc.200461429

  18. Carbon-doped p-type (0001) plane AlGaN (Al = 6–55%) with high hole density

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 459–463, Hideo Kawanishi and Tatsuya Tomizawa

    Version of Record online : 9 JAN 2012, DOI: 10.1002/pssb.201100316

  19. InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

    physica status solidi (a)

    Volume 176, Issue 1, November 1999, Pages: 273–277, S. Nakamura, A. Kikuchi, K. Kusakabe, D. Sugihara, Y. Toyoura, T. Yamada and K. Kishino

    Version of Record online : 22 NOV 1999, DOI: 10.1002/(SICI)1521-396X(199911)176:1<273::AID-PSSA273>3.0.CO;2-M

  20. Electrical transport phenomena in magnesium-doped p-type GaN

    physica status solidi (b)

    Volume 246, Issue 3, March 2009, Pages: 658–663, Leszek Konczewicz, Elżbieta Litwin-Staszewska, Sylvie Contreras, Ryszard Piotrzkowski and Lesław Dmowski

    Version of Record online : 19 DEC 2008, DOI: 10.1002/pssb.200880521