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There are 19568 results for: content related to: Normally-on/off AlN/GaN high electron mobility transistors

  1. Al(Ga)N/GaN high electron mobility transistors on silicon

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1049–1058, Yvon Cordier

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201532070

  2. Self-aligned normally-off metal–oxide–semiconductor n++GaN/InAlN/GaN high electron mobility transistors

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1086–1090, M. Blaho, D. Gregušová, Š. Haščík, M. Jurkovič, M. Ťapajna, K. Fröhlich, J. Dérer, J. -F. Carlin, N. Grandjean and J. Kuzmík

    Version of Record online : 21 JAN 2015, DOI: 10.1002/pssa.201431588

  3. High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 1, January 2011, Pages: 37–39, S. Arulkumaran, S. Vicknesh, G. I. Ng, Z. H. Liu, S. L. Selvaraj and T. Egawa

    Version of Record online : 2 DEC 2010, DOI: 10.1002/pssr.201004465

  4. You have free access to this content
    Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

    Chemical Vapor Deposition

    Volume 21, Issue 1-2-3, March 2015, Pages: 33–40, Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang

    Version of Record online : 18 DEC 2014, DOI: 10.1002/cvde.201407100

  5. Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1137–1144, Zhibo Guo and T. Paul Chow

    Version of Record online : 30 JAN 2015, DOI: 10.1002/pssa.201431657

  6. Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1130–1136, Raúl Rodríguez, Benito González, Javier García, Fetene M. Yigletu, José M. Tirado, Benjamín Iñiguez and Antonio Nunez

    Version of Record online : 20 JAN 2015, DOI: 10.1002/pssa.201431897

  7. Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance

    physica status solidi (c)

    Volume 7, Issue 10, October 2010, Pages: 2440–2444, Han Wang, Jinwook W. Chung, Xiang Gao, Shiping Guo and Tomas Palacios

    Version of Record online : 22 JUN 2010, DOI: 10.1002/pssc.200983899

  8. Enhancement-mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1081–1085, Kai Zhang, Xing Chen, Minhan Mi, Shenglei Zhao, Yonghe Chen, Jincheng Zhang, Xiaohua Ma and Yue Hao

    Version of Record online : 20 OCT 2014, DOI: 10.1002/pssa.201431585

  9. Over 550 V breakdown voltage of InAlN/GaN HEMT on Si

    physica status solidi (c)

    Volume 10, Issue 5, May 2013, Pages: 824–826, Hisashi Saito, Yoshiharu Takada, Masahiko Kuraguchi, Miki Yumoto and Kunio Tsuda

    Version of Record online : 27 MAR 2013, DOI: 10.1002/pssc.201200608

  10. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 480–483, S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot and Y. Cordier

    Version of Record online : 1 MAR 2013, DOI: 10.1002/pssa.201200572

  11. Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1162–1169, Andrzej Taube, Eliana Kamińska, Maciej Kozubal, Jakub Kaczmarski, Wojciech Wojtasiak, Jakub Jasiński, Michał A. Borysiewicz, Marek Ekielski, Marcin Juchniewicz, Jakub Grochowski, Marcin Myśliwiec, Elżbieta Dynowska, Adam Barcz, Paweł Prystawko, Marcin Zając, Robert Kucharski and Anna Piotrowska

    Version of Record online : 13 FEB 2015, DOI: 10.1002/pssa.201431724

  12. Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane-based low-k insulator films

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1153–1157, Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda and Kazukiyo Joshin

    Version of Record online : 29 DEC 2014, DOI: 10.1002/pssa.201431665

  13. Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1145–1152, Rémi Comyn, Yvon Cordier, Vincent Aimez and Hassan Maher

    Version of Record online : 15 JAN 2015, DOI: 10.1002/pssa.201431658

  14. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Pages: 21–24, Piero Gamarra, Cedric Lacam, Michelle Magis, Maurice Tordjman and Marie-Antoinette di Forte Poisson

    Version of Record online : 21 NOV 2011, DOI: 10.1002/pssa.201100090

  15. 55 nm gate ion-implanted GaN-HEMTs on sapphire and Si substrates

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2410–2412, Hideo Katayose, Masanao Ohta, Kazuki Nomoto, Norio Onojima and Tohru Nakamura

    Version of Record online : 13 MAY 2011, DOI: 10.1002/pssc.201001017

  16. Gallium nitride based power switches for next generation of power conversion

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1066–1074, Srabanti Chowdhury

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201431810

  17. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers

    physica status solidi (a)

    Volume 209, Issue 3, March 2012, Pages: 501–504, Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Kenichiro Takeda, Motoaki Iwaya, Yoshio Honda and Hiroshi Amano

    Version of Record online : 15 FEB 2012, DOI: 10.1002/pssa.201100379

  18. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 887–889, Satyaki Ganguly, Bo Song, Wan Sik Hwang, Zongyang Hu, Mingda Zhu, Jai Verma, Huili (Grace) Xing and Debdeep Jena

    Version of Record online : 20 MAR 2014, DOI: 10.1002/pssc.201300668

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    Comprehensive characterization of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with TiO2 gate dielectric

    physica status solidi (c)

    Volume 14, Issue 1-2, January 2017, Yu-Shyan Lin, Chi-Che Lu and Wei-Chou Hsu

    Version of Record online : 3 NOV 2016, DOI: 10.1002/pssc.201600227

  20. Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion

    physica status solidi (a)

    Volume 214, Issue 3, March 2017, Ruize Sun, Yung C. Liang, Yee-Chia Yeo, Yun-Hsiang Wang and Cezhou Zhao

    Version of Record online : 11 NOV 2016, DOI: 10.1002/pssa.201600562