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There are 6862191 results for: content related to: Dislocations in 4H- and 3C-SiC single crystals in the brittle regime

  1. Fundamental Aspects of SiC

    Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

    Wolfgang J. Choyke, Robert P. Devaty, Pages: 661–713, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621842.ch11

  2. Fundamental Aspects of SiC

    Handbook of Semiconductor Technology Set

    Wolfgang J. Choyke, Robert P. Devaty, Pages: 661–713, 2008

    Published Online : 4 JUN 2008, DOI: 10.1002/9783527619290.ch11

  3. Fundamental Aspects of SiC

    Standard Article

    Materials Science and Technology

    W. J. Choyke and Robert P. Devaty

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0252

  4. Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors

    Advanced Optical Materials

    Volume 1, Issue 9, September 2013, Pages: 609–625, Stefania Castelletto, Brett C. Johnson and Alberto Boretti

    Article first published online : 7 AUG 2013, DOI: 10.1002/adom.201300246

  5. EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 95–151, S. Greulich-Weber

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<95::AID-PSSA95>3.0.CO;2-X

  6. CVD Growth of 3C-SiC on 4H/6H Mesas

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 531–540, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang and M. Dudley

    Article first published online : 21 AUG 2006, DOI: 10.1002/cvde.200506460

  7. Optical Characterization of Silicon Carbide Polytypes

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 5–38, R. P. Devaty and W. J. Choyke

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.0.CO;2-J

  8. Effective Masses in SiC Determined by Cyclotron Resonance Experiments

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 79–93, W. M. Chen, N. T. Son, E. Janzén, D. M. Hofmann and B. K. Meyer

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<79::AID-PSSA79>3.0.CO;2-D

  9. Silicon Carbide Applications in Power Electronics

    Power Electronics Semiconductor Devices

    Marie-Laure Locatelli, Dominique Planson, Pages: 185–265, 2010

    Published Online : 2 FEB 2010, DOI: 10.1002/9780470611494.ch4

  10. Systematic theoretical investigations for the polytypism in SiC

    physica status solidi (c)

    Volume 10, Issue 5, May 2013, Pages: 857–860, Tomonori Ito, Toru Akiyama and Kohji Nakamura

    Article first published online : 29 JAN 2013, DOI: 10.1002/pssc.201200570

  11. Epitaxial Growth of Silicon Carbide

    Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications

    Tsunenobu Kimoto, James A. Cooper, Pages: 75–124, 2014

    Published Online : 26 SEP 2014, DOI: 10.1002/9781118313534.ch4

  12. Heteroepitaxial Growth of Nonpolar-face AlN on SiC Substrates by Plasma-assisted Molecular-beam Epitaxy

    Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

    Tanya Paskova, Pages: 73–99, 2008

    Published Online : 16 SEP 2008, DOI: 10.1002/9783527623150.ch4

  13. Application of LTPL Investigation Methods to CVD-Grown SiC

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 549–556, J. Camassel, S. Juillaguet, M. Zielinski and C. Balloud

    Article first published online : 21 AUG 2006, DOI: 10.1002/cvde.200606472

  14. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 199–225, T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0

  15. Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1281–1297, Michel Bockstedte, Adam Gali, Alexander Mattausch, Oleg Pankratov and John W. Steeds

    Article first published online : 10 JUN 2008, DOI: 10.1002/pssb.200844048

  16. Identification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Michel Bockstedte, Adam Gali, Alexander Mattausch, Oleg Pankratov, John W. Steeds, Pages: 115–145, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch5

  17. The Microscopic and Electronic Structure of Shallow Donors in SiC

    physica status solidi (b)

    Volume 210, Issue 2, December 1998, Pages: 415–427, S. Greulich-Weber

    Article first published online : 29 JAN 1999, DOI: 10.1002/(SICI)1521-3951(199812)210:2<415::AID-PSSB415>3.0.CO;2-0

  18. Device Processing of Silicon Carbide

    Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications

    Tsunenobu Kimoto, James A. Cooper, Pages: 189–276, 2014

    Published Online : 26 SEP 2014, DOI: 10.1002/9781118313534.ch6

  19. Characterization Techniques and Defects in Silicon Carbide

    Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications

    Tsunenobu Kimoto, James A. Cooper, Pages: 125–187, 2014

    Published Online : 26 SEP 2014, DOI: 10.1002/9781118313534.ch5

  20. The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection

    physica status solidi (a)

    Volume 210, Issue 1, January 2013, Pages: 181–186, Pirouz Pirouz

    Article first published online : 4 DEC 2012, DOI: 10.1002/pssa.201200501