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There are 7950290 results for: content related to: Dislocation luminescence in highly doped degenerated germanium at room temperature

  1. Improved diffusion profiles in back-contacted back-junction Si solar cells with an overcompensated boron-doped emitter

    physica status solidi (a)

    Volume 208, Issue 12, December 2011, Pages: 2871–2883, Christian Reichel, Martin Bivour, Filip Granek, Martin Hermle and Stefan W. Glunz

    Version of Record online : 13 JUL 2011, DOI: 10.1002/pssa.201127199

  2. Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells

    physica status solidi (b)

    Volume 241, Issue 5, April 2004, Pages: 1124–1133, H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki

    Version of Record online : 11 FEB 2004, DOI: 10.1002/pssb.200301973

  3. Tunnelling Processes at Highly Doped ZnO-Electrodes in Aqueous Electrolytes Part II: Electron Exchange with the Valence Band

    Berichte der Bunsengesellschaft für physikalische Chemie

    Volume 78, Issue 10, Oktober 1974, Pages: 1024–1030, B. Pettinger, H.-R. Schöppel, T. Yokoyama and H. Gerischer

    Version of Record online : 5 MAY 2010, DOI: 10.1002/bbpc.19740781012

  4. Metal-Assisted Chemical Etching of Silicon: A Review

    Advanced Materials

    Volume 23, Issue 2, January 11, 2011, Pages: 285–308, Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor and Ulrich Gösele

    Version of Record online : 21 SEP 2010, DOI: 10.1002/adma.201001784

  5. TiAl Ohmic contact on GaN, in situ high or low doped or Si implanted, epitaxially grown on sapphire or silicon

    physica status solidi (a)

    Volume 209, Issue 6, June 2012, Pages: 1059–1066, F. Cayrel, O. Ménard, A. Yvon, N. Thierry-Jébali, C. Brylinsky, E. Collard and D. Alquier

    Version of Record online : 22 FEB 2012, DOI: 10.1002/pssa.201127564

  6. Screen-printed epitaxial silicon thin-film solar cells with 13·8% efficiency

    Progress in Photovoltaics: Research and Applications

    Volume 11, Issue 8, December 2003, Pages: 527–534, J. Rentsch, S. Bau and D. M. Huljić

    Version of Record online : 5 DEC 2003, DOI: 10.1002/pip.513

  7. Microscopic Signature of Metallic State in Semicrystalline Conjugated Polymers Doped with Fluoroalkylsilane Molecules

    Advanced Materials

    Volume 26, Issue 15, April 16, 2014, Pages: 2376–2383, Hisaaki Tanaka, Masataka Hirate, Shun Watanabe and Shin-ichi Kuroda

    Version of Record online : 11 DEC 2013, DOI: 10.1002/adma.201304691

  8. Wet chemically prepared silicon nanowire arrays on low-cost substrates for photovoltaic applications

    physica status solidi (a)

    Volume 210, Issue 4, April 2013, Pages: 728–731, Guobin Jia, Ingmar Höger, Annett Gawlik, Jan Dellith, Louise R. Bailey, Alexander Ulyashin and Fritz Falk

    Version of Record online : 28 NOV 2012, DOI: 10.1002/pssa.201200531

  9. Burstein-Moss effect and near-band-edge luminescence spectrum of highly doped indium arsenide

    physica status solidi (b)

    Volume 91, Issue 1, 1 January 1979, Pages: 71–81, V. A. Vilkotskii, D. S. Domanevskii, R. D. Kakanakov, V. V. Krasovskii and V. D. Tkachev

    Version of Record online : 8 FEB 2006, DOI: 10.1002/pssb.2220910106

  10. Tunnelling Processes at Highly Doped ZnO Electrodes in Contact with Aqueous Electrolytes. I. Electron Exchange with the Conduction Band

    Berichte der Bunsengesellschaft für physikalische Chemie

    Volume 78, Issue 5, Mai 1974, Pages: 450–455, B. Pettinger, H.-R. Schöppel and H. Gerischer

    Version of Record online : 5 MAY 2010, DOI: 10.1002/bbpc.19740780506

  11. Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 1-2, February 2013, Pages: 133–135, Helin Cao, Suyang Xu, Ireneusz Miotkowski, Jifa Tian, Deepak Pandey, M. Zahid Hasan and Yong P. Chen

    Version of Record online : 6 DEC 2012, DOI: 10.1002/pssr.201206457

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    Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3

    physica status solidi (RRL) - Rapid Research Letters

    Volume 6, Issue 1, January 2012, Pages: 4–6, B. Hoex, M. C. M. van de Sanden, J. Schmidt, R. Brendel and W. M. M. Kessels

    Version of Record online : 17 OCT 2011, DOI: 10.1002/pssr.201105445

  13. High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

    Advanced Materials

    Volume 28, Issue 21, June 1, 2016, Pages: 4120–4125, Yuan Liu, Jiming Sheng, Hao Wu, Qiyuan He, Hung-Chieh Cheng, Muhammad Imran Shakir, Yu Huang and Xiangfeng Duan

    Version of Record online : 1 APR 2016, DOI: 10.1002/adma.201506173

  14. Optical echo-spectroscopy of highly doped Tm:YAG

    Laser Physics Letters

    Volume 5, Issue 12, December 2008, Pages: 882–886, A.A. Kalachev, K.R. Karimullin, V.V. Samartsev and V.A. Zuikov

    Version of Record online : 4 AUG 2008, DOI: 10.1002/lapl.200810078

  15. Fabrication of Reproducible, Integration-Compatible Hybrid Molecular/Si Electronics


    Volume 10, Issue 24, December 29, 2014, Pages: 5151–5160, Xi Yu, Robert Lovrinčić, Olga Kraynis, Gabriel Man, Tal Ely, Arava Zohar, Tal Toledano, David Cahen and Ayelet Vilan

    Version of Record online : 5 AUG 2014, DOI: 10.1002/smll.201400484

  16. Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition

    physica status solidi (b)

    Volume 245, Issue 1, January 2008, Pages: 82–88, J. Kavaliauskas, G. Krivaitė, B. Čechavičius, G. Valušis, D. Seliuta, B. Sherliker, M. Halsall, P. Harrison, E. Linfield and M. Steer

    Version of Record online : 25 OCT 2007, DOI: 10.1002/pssb.200743348

  17. A high-throughput dielectrophoresis-based cell electrofusion microfluidic device


    Volume 32, Issue 18, September 2011, Pages: 2488–2495, Ning Hu, Jun Yang, Zheng-Qin Yin, Ye Ai, Shizhi Qian, Irina B. Svir, Bin Xia, Jia-Wen Yan, Wen-Sheng Hou and Xiao-Lin Zheng

    Version of Record online : 19 AUG 2011, DOI: 10.1002/elps.201100082

  18. Photoluminescence study of highly doped, tensile-strained GaAs/In0.07Al0.93As quantum wells

    Microwave and Optical Technology Letters

    Volume 16, Issue 1, September 1997, Pages: 7–11, Vishnu Balan, Theda Daniels-Race and Laurie E. McNeil

    Version of Record online : 7 DEC 1998, DOI: 10.1002/(SICI)1098-2760(199709)16:1<7::AID-MOP3>3.0.CO;2-H

  19. Stimulated Brillouin Scattering in a Transversely Magnetised Doped Centrosymmetric Semiconductor

    physica status solidi (b)

    Volume 156, Issue 2, 1 December 1989, Pages: 705–715, A. Neogi and S. Ghosh

    Version of Record online : 19 FEB 2006, DOI: 10.1002/pssb.2221560234

  20. Neutronographic characterization of II-VI cubic crystals highly doped by 3d ions: on possible tendencies to structure rearrangements in the sphalerite crystal lattice

    physica status solidi (c)

    Volume 13, Issue 7-9, July 2016, Pages: 456–460, Tatiana Surkova, Veniamin Maksimov, Sergey Dubinin and Santos Adan Lopez-Rivera

    Version of Record online : 9 FEB 2016, DOI: 10.1002/pssc.201510231