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There are 5025 results for: content related to: Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism

  1. AlN/3C–SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators

    Advanced Materials

    Volume 24, Issue 20, May 22, 2012, Pages: 2722–2727, Chih-Ming Lin, Yung-Yu Chen, Valery V. Felmetsger, Debbie G. Senesky and Albert P. Pisano

    Article first published online : 12 APR 2012, DOI: 10.1002/adma.201104842

  2. A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001)

    Advanced Functional Materials

    Volume 16, Issue 7, May, 2006, Pages: 975–979, M. Soueidan and G. Ferro

    Article first published online : 27 MAR 2006, DOI: 10.1002/adfm.200500597

  3. CVD Growth of 3C-SiC on 4H/6H Mesas

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 531–540, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang and M. Dudley

    Article first published online : 21 AUG 2006, DOI: 10.1002/cvde.200506460

  4. Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 483–488, G. Ferro, T. Chassagne, A. Leycuras, F. Cauwet and Y. Monteil

    Article first published online : 21 AUG 2006, DOI: 10.1002/cvde.200506461

  5. Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates

    physica status solidi (c)

    Volume 2, Issue 4, March 2005, Pages: 1284–1287, Ch. Zgheib, M. Kazan, P. Weih, O. Ambacher, P. Masri and J. Pezoldt

    Article first published online : 4 MAR 2005, DOI: 10.1002/pssc.200460427

  6. Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

    physica status solidi (a)

    Volume 208, Issue 2, February 2011, Pages: 357–376, K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher and M. A. Hein

    Article first published online : 21 JUL 2010, DOI: 10.1002/pssa.201026343

  7. Growth of SiC on Porous SiC Buffer Layers

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    S. E. Saddow, R. L. Myers-Ward, Y. Shishkin, Pages: 55–75, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch3

  8. Surface morphology of Ge-modified 3C-SiC/Si films

    Surface and Interface Analysis

    Volume 40, Issue 9, September 2008, Pages: 1310–1317, Richard Nader, Michel Kazan, Elie Moussaed, Thomas Stauden, Merten Niebelschütz, Pierre Masri and Jörg Pezoldt

    Article first published online : 21 JUL 2008, DOI: 10.1002/sia.2895

  9. MOVPE InN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111)

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2281–2284, A. Yamamoto, T. Kobayashi, T. Yamauchi, M. Sasase, A. Hashimoto and Y. Ito

    Article first published online : 8 MAR 2005, DOI: 10.1002/pssc.200461421

  10. Micro- and nanomechanical structures for silicon carbide MEMS and NEMS

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1404–1424, Christian A. Zorman and Rocco J. Parro

    Article first published online : 10 JUN 2008, DOI: 10.1002/pssb.200844135

  11. Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Christian A. Zorman, Rocco J. Parro, Pages: 411–451, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch17

  12. Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 11, November 2010, Pages: 305–307, Stefano Leone, Franziska C. Beyer, Anne Henry, Olof Kordina and Erik Janzén

    Article first published online : 11 NOV 2010, DOI: 10.1002/pssr.201004271

  13. Fundamental Aspects of SiC

    Standard Article

    Materials Science and Technology

    W. J. Choyke and Robert P. Devaty

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0252

  14. Fundamental Aspects of SiC

    Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

    Wolfgang J. Choyke, Robert P. Devaty, Pages: 661–713, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621842.ch11

  15. Fundamental Aspects of SiC

    Handbook of Semiconductor Technology Set

    Wolfgang J. Choyke, Robert P. Devaty, Pages: 661–713, 2008

    Published Online : 4 JUN 2008, DOI: 10.1002/9783527619290.ch11

  16. Reducing Planar Defects in 3C–SiC

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 502–508, H. Nagasawa, K. Yagi, T. Kawahara and N. Hatta

    Article first published online : 21 AUG 2006, DOI: 10.1002/cvde.200506466

  17. Structure of SiC-Quantum Wells Studied by TEM and CBED

    Crystal Research and Technology

    Volume 37, Issue 5, May 2002, Pages: 466–476, U. Kaiser, Th. Kups, A. Fissel and W. Richter

    Article first published online : 16 MAY 2002, DOI: 10.1002/1521-4079(200205)37:5<466::AID-CRAT466>3.0.CO;2-I

  18. Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1272–1280, Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara and Naoki Hatta

    Article first published online : 2 JUN 2008, DOI: 10.1002/pssb.200844053

  19. Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Pages: 95–113, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch4

  20. Optical Characterization of Silicon Carbide Polytypes

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 5–38, R. P. Devaty and W. J. Choyke

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.0.CO;2-J