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There are 8282632 results for: content related to: Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism

  1. A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001)

    Advanced Functional Materials

    Volume 16, Issue 7, May, 2006, Pages: 975–979, M. Soueidan and G. Ferro

    Version of Record online : 27 MAR 2006, DOI: 10.1002/adfm.200500597

  2. Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 11, November 2010, Pages: 305–307, Stefano Leone, Franziska C. Beyer, Anne Henry, Olof Kordina and Erik Janzén

    Version of Record online : 11 NOV 2010, DOI: 10.1002/pssr.201004271

  3. Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2267–2270, Hiroyuki Yaguchi, Yoshihiro Kitamura, Kenji Nishida, Yohei Iwahashi, Yasuto Hijikata and Sadafumi Yoshida

    Version of Record online : 7 FEB 2005, DOI: 10.1002/pssc.200461386

  4. Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates

    physica status solidi (c)

    Volume 2, Issue 4, March 2005, Pages: 1284–1287, Ch. Zgheib, M. Kazan, P. Weih, O. Ambacher, P. Masri and J. Pezoldt

    Version of Record online : 4 MAR 2005, DOI: 10.1002/pssc.200460427

  5. Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1983–1985, Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne

    Version of Record online : 18 APR 2008, DOI: 10.1002/pssc.200778641

  6. Reducing Planar Defects in 3C–SiC

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 502–508, H. Nagasawa, K. Yagi, T. Kawahara and N. Hatta

    Version of Record online : 21 AUG 2006, DOI: 10.1002/cvde.200506466

  7. Fabrication and Characterization of 3C-SiC-Based MOSFETs

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 523–530, A. Schöner, M. Krieger, G. Pensl, M. Abe and H. Nagasawa

    Version of Record online : 21 AUG 2006, DOI: 10.1002/cvde.200606467

  8. Growth of SiC on Porous SiC Buffer Layers

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    S. E. Saddow, R. L. Myers-Ward, Y. Shishkin, Pages: 55–75, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch3

  9. Micro- and nanomechanical structures for silicon carbide MEMS and NEMS

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1404–1424, Christian A. Zorman and Rocco J. Parro

    Version of Record online : 10 JUN 2008, DOI: 10.1002/pssb.200844135

  10. Surface morphology of Ge-modified 3C-SiC/Si films

    Surface and Interface Analysis

    Volume 40, Issue 9, September 2008, Pages: 1310–1317, Richard Nader, Michel Kazan, Elie Moussaed, Thomas Stauden, Merten Niebelschütz, Pierre Masri and Jörg Pezoldt

    Version of Record online : 21 JUL 2008, DOI: 10.1002/sia.2895

  11. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)

    physica status solidi (c)

    Volume 11, Issue 2, February 2014, Pages: 265–268, R. M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D. J. As and J. K. N. Lindner

    Version of Record online : 20 JAN 2014, DOI: 10.1002/pssc.201300292

  12. Growth of 3C-SiC nanowires on nickel coated Si(100) substrate using dichloromethylvinylsilane and diethylmethylsilane by MOCVD method

    physica status solidi (c)

    Volume 6, Issue 4, April 2009, Pages: 810–812, J.-S. Hyun, S.-H. Nam, B.-C. Kang and J.-H. Boo

    Version of Record online : 16 JAN 2009, DOI: 10.1002/pssc.200880621

  13. Experimental investigation of different configurations for the seeded growth of SiC crystals via a VLS mechanism

    Crystal Research and Technology

    Volume 43, Issue 4, April 2008, Pages: 374–380, N. Boutarek, M. Bonda, D. Chaussende and R. Madar

    Version of Record online : 1 FEB 2008, DOI: 10.1002/crat.200711090

  14. Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors

    Advanced Optical Materials

    Volume 1, Issue 9, September 2013, Pages: 609–625, Stefania Castelletto, Brett C. Johnson and Alberto Boretti

    Version of Record online : 7 AUG 2013, DOI: 10.1002/adom.201300246

  15. Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD

    Chemical Vapor Deposition

    Volume 19, Issue 1-3, March 2013, Pages: 29–37, Hao Zhuang, Lei Zhang, Thorsten Staedler and Xin Jiang

    Version of Record online : 18 FEB 2013, DOI: 10.1002/cvde.201207011

  16. Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 483–488, G. Ferro, T. Chassagne, A. Leycuras, F. Cauwet and Y. Monteil

    Version of Record online : 21 AUG 2006, DOI: 10.1002/cvde.200506461

  17. Very low dose ion-implantation effect on heteroepitaxial 3C-SiC mechanical properties

    physica status solidi (a)

    Volume 209, Issue 11, November 2012, Pages: 2235–2240, R. Anzalone, N. Piluso, A. Marino, A. Sciuto and G. D'Arrigo

    Version of Record online : 21 AUG 2012, DOI: 10.1002/pssa.201228249

  18. Graphene growth on silicon carbide: A review

    physica status solidi (a)

    Volume 213, Issue 9, September 2016, Pages: 2277–2289, Neeraj Mishra, John Boeckl, Nunzio Motta and Francesca Iacopi

    Version of Record online : 2 JUN 2016, DOI: 10.1002/pssa.201600091

  19. Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1272–1280, Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara and Naoki Hatta

    Version of Record online : 2 JUN 2008, DOI: 10.1002/pssb.200844053

  20. Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Pages: 95–113, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch4