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There are 55009 results for: content related to: Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE

  1. Deep traps analysis in AlGaN/GaN heterostructure transistors

    physica status solidi (c)

    Volume 7, Issue 1, January 2010, Pages: 92–95, W. Chikhaoui, J M. Bluet, C. Bru-Chevallier, C. Dua and R. Aubry

    Article first published online : 16 DEC 2009, DOI: 10.1002/pssc.200982634

  2. Defects

    Semiconductor Material and Device Characterization, Third Edition

    Dieter K. Schroder, Pages: 251–317, 2005

    Published Online : 7 APR 2005, DOI: 10.1002/0471749095.ch5

  3. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 199–225, T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0

  4. On the nature of defects produced by motion of dislocations in silicon

    physica status solidi (a)

    Volume 212, Issue 8, August 2015, Pages: 1695–1703, M. A. Khorosheva, V. V. Kveder and M. Seibt

    Article first published online : 10 JUN 2015, DOI: 10.1002/pssa.201532153

  5. Deep Level Transient Spectroscopy

    Standard Article

    Characterization of Materials

    Chin-Che Tin

    Published Online : 18 MAY 2012, DOI: 10.1002/0471266965.com036.pub2

  6. DLTS study of GaAs MIS structures with plasma deposited insulator

    physica status solidi (a)

    Volume 153, Issue 2, 16 February 1996, Pages: 379–387, E. G. Salman, A. N. Korshunov and V. N. Vertoprakhov

    Article first published online : 16 FEB 2006, DOI: 10.1002/pssa.2211530211

  7. A re-examination of cobalt-related defects in n- and p-type silicon

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1913–1916, Leopold Scheffler, Vladimir Kolkovsky and Jörg Weber

    Article first published online : 23 JUL 2012, DOI: 10.1002/pssa.201200140

  8. DLTS study of a seeded physical vapor transport ZnSe schottky diode

    physica status solidi (a)

    Volume 146, Issue 2, 16 December 1994, Pages: 735–743, B. G. Markey, S. W. S. McKeever and G. Cantwell

    Article first published online : 17 FEB 2006, DOI: 10.1002/pssa.2211460218

  9. Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

    physica status solidi (a)

    Volume 209, Issue 6, June 2012, Pages: 1174–1178, Shaobo Dun, Yang Jiang, Jingqiang Li, Yulong Fang, Jiayun Yin, Bo Liu, Jingjing Wang, Hong Chen, Zhihong Feng and Shujun Cai

    Article first published online : 5 MAR 2012, DOI: 10.1002/pssa.201127553

  10. Effect of epitaxial layer thickness on the deep level defects in MBE grown n-type Al0.33Ga0.67As

    physica status solidi (c)

    Volume 9, Issue 7, July 2012, Pages: 1643–1646, Riaz H. Mari, M. Aziz, M. Shafi, A. Khatab, D. Taylor and M. Henini

    Article first published online : 29 MAY 2012, DOI: 10.1002/pssc.201100676

  11. The Broad Midgap Deep-Level Transient Spectroscopy Band in Proton (65 MeV) and Fast Neutron-Irradiated n-GaAs

    physica status solidi (b)

    Volume 212, Issue 2, April 1999, Pages: 229–239, V. N. Brudnyi, A. V. Gradoboev and V. V. Peshev

    Article first published online : 1 APR 1999, DOI: 10.1002/(SICI)1521-3951(199904)212:2<229::AID-PSSB229>3.0.CO;2-N

  12. A re-examination of the interstitial Ti levels in Si

    physica status solidi (c)

    Volume 9, Issue 10-11, October 2012, Pages: 1996–1999, Vladimir Kolkovsky, Leopold Scheffler and Joerg Weber

    Article first published online : 13 AUG 2012, DOI: 10.1002/pssc.201200141

  13. Drain current DLTS of AlGaN/GaN HEMTs

    physica status solidi (a)

    Volume 200, Issue 1, November 2003, Pages: 195–198, T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto and K. Maezawa

    Article first published online : 15 OCT 2003, DOI: 10.1002/pssa.200303464

  14. Spatial Sensitivity Reversal in a Modified DLTS

    physica status solidi (a)

    Volume 132, Issue 1, 16 July 1992, Pages: 133–144, I. Thurzo and V. Nádaždy

    Article first published online : 16 FEB 2006, DOI: 10.1002/pssa.2211320114

  15. DLTS investigation of electron traps in As-grown and Cd-fired CdS

    physica status solidi (a)

    Volume 78, Issue 1, 16 July 1983, Pages: 267–275, D. Verity, D. Shaw, F. J. Bryant and C. G. Scott

    Article first published online : 17 FEB 2006, DOI: 10.1002/pssa.2210780132

  16. Some properties of MIS structures prepared by plasma oxidation of Al layers on GaAs

    physica status solidi (a)

    Volume 106, Issue 2, 16 April 1988, Pages: 659–667, E. Pinčíak, B. Maťátko, J. Bartoš, I. Thurzo, M. Geendel, V. Nádaždy, M. Zubeková and M. Morvic

    Article first published online : 15 FEB 2006, DOI: 10.1002/pssa.2211060239

  17. Investigation of traps in AlGaN/GaN HEMTs on silicon substrate

    physica status solidi (c)

    Volume 0, Issue 7, December 2003, Pages: 2360–2363, M. Wolter, M. Marso, P. Javorka, J. Bernát, R. Carius, H. Lüth and P. Kordoš

    Article first published online : 14 NOV 2003, DOI: 10.1002/pssc.200303535

  18. Electrically active centers introduced in p-type Si by rapid thermal processing

    physica status solidi (c)

    Volume 8, Issue 3, March 2011, Pages: 725–728, C. K. Tang, E. Lund, E. V. Monakhov, J. Mayandi, A. Holt and B. G. Svensson

    Article first published online : 22 DEC 2010, DOI: 10.1002/pssc.201000263

  19. DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C

    physica status solidi (a)

    Volume 100, Issue 2, 16 April 1987, Pages: 567–582, K. Schmalz, F.-G. Kirscht, H. Klose, H. Richter and K. Tittelbach-Helmrich

    Article first published online : 16 FEB 2006, DOI: 10.1002/pssa.2211000223

  20. Electrical characterization of ion bombarded AlGaN Schottky photodetectors

    physica status solidi (c)

    Volume 1, Issue 9, August 2004, Pages: 2328–2332, M. J. Legodi, F. D. Auret and M. Hayes

    Article first published online : 24 JUN 2004, DOI: 10.1002/pssc.200404831