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There are 11300 results for: content related to: Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE

  1. Flicker Noise Reduction in GaN Field-Effect Transistors

    RF Technologies for Low Power Wireless Communications

    Kang L. Wang, Alexander Balandin, Pages: 159–188, 2002

    Published Online : 15 JAN 2002, DOI: 10.1002/0471221643.ch5

  2. Electrically active defects at AlN/Si interface studied by DLTS and ESR

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1851–1856, Eddy Simoen, Domenica Visalli, Marleen Van Hove, Maarten Leys, Paola Favia, Hugo Bender, Gustaaf Borghs, Ahn Puc Duc Nguyen and Andre Stesmans

    Version of Record online : 20 JUL 2012, DOI: 10.1002/pssa.201200061

  3. Electrical characterisation of GaN and AlGaN layers grown by plasma-assisted MBE

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 1043–1047, V. Kolkovsky, L. Scheffler, M. Sobanska, K. Klosek, Z. R. Zytkiewicz and J. Weber

    Version of Record online : 15 FEB 2012, DOI: 10.1002/pssc.201100138

  4. Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

    physica status solidi (a)

    Volume 209, Issue 6, June 2012, Pages: 1174–1178, Shaobo Dun, Yang Jiang, Jingqiang Li, Yulong Fang, Jiayun Yin, Bo Liu, Jingjing Wang, Hong Chen, Zhihong Feng and Shujun Cai

    Version of Record online : 5 MAR 2012, DOI: 10.1002/pssa.201127553

  5. Drain current DLTS of AlGaN/GaN HEMTs

    physica status solidi (a)

    Volume 200, Issue 1, November 2003, Pages: 195–198, T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto and K. Maezawa

    Version of Record online : 15 OCT 2003, DOI: 10.1002/pssa.200303464

  6. Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 12, December 2010, Pages: 374–376, Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi and Hiroji Kawai

    Version of Record online : 25 OCT 2010, DOI: 10.1002/pssr.201004421

  7. Defects

    Semiconductor Material and Device Characterization, Third Edition

    Dieter K. Schroder, Pages: 251–317, 2005

    Published Online : 7 APR 2005, DOI: 10.1002/0471749095.ch5

  8. Deep traps analysis in AlGaN/GaN heterostructure transistors

    physica status solidi (c)

    Volume 7, Issue 1, January 2010, Pages: 92–95, W. Chikhaoui, J M. Bluet, C. Bru-Chevallier, C. Dua and R. Aubry

    Version of Record online : 16 DEC 2009, DOI: 10.1002/pssc.200982634

  9. Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1075–1080, Zenji Yatabe, Joel T. Asubar, Taketomo Sato and Tamotsu Hashizume

    Version of Record online : 18 NOV 2014, DOI: 10.1002/pssa.201431652

  10. Photoluminescence properties of Al-rich AlXGa1-XN grown on AlN/sapphire template by MOCVD

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 733–736, Jianping Zeng, Jianchang Yan, Junxi Wang, Peipei Cong, Jinmin Li, Shuaishuai Sun and Ye Tao

    Version of Record online : 26 JAN 2012, DOI: 10.1002/pssc.201100318

  11. Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures

    physica status solidi (c)

    Volume 11, Issue 11-12, November 2014, Pages: 1551–1555, Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Sebastiano Ravesi and Filippo Giannazzo

    Version of Record online : 10 OCT 2014, DOI: 10.1002/pssc.201400078

  12. DLTS study of a seeded physical vapor transport ZnSe schottky diode

    physica status solidi (a)

    Volume 146, Issue 2, 16 December 1994, Pages: 735–743, B. G. Markey, S. W. S. McKeever and G. Cantwell

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2211460218

  13. Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1938–1940, Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata, Kenichiro Takeda and Hiroshi Amano

    Version of Record online : 6 MAY 2010, DOI: 10.1002/pssc.200983440

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    Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 439–450, V. N. Jmerik, E. V. Lutsenko and S. V. Ivanov

    Version of Record online : 1 MAR 2013, DOI: 10.1002/pssa.201300006

  15. Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 10, October 2015, Pages: 575–579, Alexander Y. Polyakov, Jin-Hyeon Yun, Haeng-Keun Ahn, Alexander S. Usikov, Eugene B. Yakimov, Sergey A. Tarelkin, Nikolai B. Smirnov, Kirill D. Shcherbachev, Heikki Helava, Yuri N. Makarov, Sergey Yu Kurin, Sergey I. Didenko, Boris P. Papchenko and In-Hwan Lee

    Version of Record online : 30 SEP 2015, DOI: 10.1002/pssr.201510315

  16. Traps and defects in pre- and post- stressed AlGaN–GaN high electron mobility transistors

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1611–1613, Yongkun Sin, Brendan Foran, Jungwoo Joh and Jesus A. del Alamo

    Version of Record online : 8 JUN 2011, DOI: 10.1002/pssa.201001079

  17. AlGaN/GaN Nanowire Heterostructures

    Wide Band Gap Semiconductor Nanowires 2

    Jörg Teubert, Jordi Arbiol, Martin Eickhoff, Pages: 1–40, 2014

    Published Online : 8 AUG 2014, DOI: 10.1002/9781118984291.ch1

  18. Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer

    physica status solidi (c)

    Volume 10, Issue 11, November 2013, Pages: 1521–1524, Noritoshi Maeda and Hideki Hirayama

    Version of Record online : 18 OCT 2013, DOI: 10.1002/pssc.201300278

  19. Growth and characterization of AlGaN/GaN/AlGaN field effect transistors

    physica status solidi (c)

    Volume 7, Issue 10, October 2010, Pages: 2404–2407, Z. Chen, Y. Pei, R. Chu, S. Newman, D. Brown, R. Chung, S. Keller, S. P. DenBaars, S. Nakamura and U. K. Mishra

    Version of Record online : 15 JUN 2010, DOI: 10.1002/pssc.200983890

  20. Changes induced in electrical properties and deep level spectra of p-AlGaN films by treatment in hydrogen plasma and by proton implantation

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2480–2483, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Rohit Khanna and S. J. Pearton

    Version of Record online : 1 FEB 2005, DOI: 10.1002/pssc.200461270