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There are 14322 results for: content related to: Mechanism of Si outdiffusion in plasma-assisted molecular beam epitaxy of GaN on Si

  1. Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

    physica status solidi (a)

    Volume 194, Issue 2, December 2002, Pages: 524–527, P. Waltereit, S.-H. Lim, M. McLaurin and J.S. Speck

    Article first published online : 10 DEC 2002, DOI: 10.1002/1521-396X(200212)194:2<524::AID-PSSA524>3.0.CO;2-N

  2. Plasma-assisted MBE growth of GaN on Si(111) substrates

    Crystal Research and Technology

    Volume 47, Issue 3, March 2012, Pages: 307–312, M. Sobanska, K. Klosek, Z. R. Zytkiewicz, J. Borysiuk, B. S. Witkowski, E. Lusakowska, A. Reszka and R. Jakiela

    Article first published online : 6 OCT 2011, DOI: 10.1002/crat.201100408

  3. Growth of GaN on porous SiC and GaN substrates

    physica status solidi (a)

    Volume 200, Issue 1, November 2003, Pages: 44–47, C. K. Inoki, T. S. Kuan, A. Sagar, C. D. Lee, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn and I. Adesida

    Article first published online : 7 NOV 2003, DOI: 10.1002/pssa.200303542

  4. MBE growth of cubic GaN on GaAs substrates

    physica status solidi (b)

    Volume 194, Issue 1, 1 March 1996, Pages: 109–120, H. Yang, O. Brandt and K. Ploog

    Article first published online : 15 FEB 2006, DOI: 10.1002/pssb.2221940112

  5. Growth of GaN on Porous SiC by Molecular Beam Epitaxy

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    Ashutosh Sagar, R. M. Feenstra, J. A. Freitas, Pages: 101–119, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch5

  6. You have free access to this content
    Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+ Ion Implantation

    Chemical Vapor Deposition

    Volume 16, Issue 1-3, March 2010, Pages: 80–84, Bumjoon Kim, Kwangtaek Lee, Samseok Jang, Junggeun Jhin, Seungjae Lee, Jonghyeob Baek, Youngmoon Yu, Jaesang Lee and Dongjin Byun

    Article first published online : 22 MAR 2010, DOI: 10.1002/cvde.200906807

  7. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1583–1586, Tong-Ho Kim, Soojeong Choi, Pae Wu, April Brown, Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno and Akihiro Moto

    Article first published online : 10 MAY 2006, DOI: 10.1002/pssc.200565207

  8. You have free access to this content
    Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 439–450, V. N. Jmerik, E. V. Lutsenko and S. V. Ivanov

    Article first published online : 1 MAR 2013, DOI: 10.1002/pssa.201300006

  9. Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2191–2194, R. Armitage, J. Suda and T. Kimoto

    Article first published online : 7 FEB 2005, DOI: 10.1002/pssc.200461539

  10. Plasma-Assisted Molecular Beam Epitaxy of III–V Nitrides

    Nitride Semiconductors: Handbook on Materials and Devices

    Alexandros Georgakilas, Hock Min Ng, Philomela Komninou, Pages: 107–191, 2006

    Published Online : 7 JUN 2006, DOI: 10.1002/3527607641.ch3

  11. Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy

    physica status solidi (a)

    Volume 201, Issue 2, January 2004, Pages: 320–323, C. Skierbiszewski, Z. Wasilewski, M. Siekacz, A. Feduniewicz, B. Pastuszka, I. Grzegory, M. Leszczynski and S. Porowski

    Article first published online : 9 JAN 2004, DOI: 10.1002/pssa.200303961

  12. Epitaxial growth of GaN films on Cr-compound buffer layers by plasma assisted molecular beam epitaxy

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2013–2015, Jinsub Park, Wook Hyun Lee, Seog Woo Lee, Jun-Seok Ha, Meoung Whan Cho and Takafumi Yao

    Article first published online : 12 APR 2011, DOI: 10.1002/pssc.201000880

  13. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 480–483, S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot and Y. Cordier

    Article first published online : 1 MAR 2013, DOI: 10.1002/pssa.201200572

  14. GaN quantum dots grown on non-polar a-plane SiC by plasma-assisted molecular beam epitaxy

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2341–2344, S. Founta, F. Rol, T. Andreev, B. Gayral, E. Bellet-Amalric, C. Moisson, H. Mariette and B. Daudin

    Article first published online : 1 FEB 2005, DOI: 10.1002/pssc.200461360

  15. Effects of hydrogen during molecular beam epitaxy of GaN

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2183–2186, Y. Dong and R. M. Feenstra

    Article first published online : 7 FEB 2005, DOI: 10.1002/pssc.200461464

  16. Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 538–541, S. V. Novikov, C. R. Staddon, R. E. L. Powell, A. V. Akimov, A. J. Kent and C. T. Foxon

    Article first published online : 3 FEB 2012, DOI: 10.1002/pssc.201100297

  17. Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy

    physica status solidi (c)

    Volume 8, Issue 5, May 2011, Pages: 1439–1444, S. V. Novikov, C. T. Foxon and A. J. Kent

    Article first published online : 14 MAR 2011, DOI: 10.1002/pssc.201000736

  18. Molecular beam epitaxy of cubic III-nitrides on GaAs substrates

    physica status solidi (c)

    Volume 0, Issue 6, September 2003, Pages: 1607–1626, D. J. As, D. Schikora and K. Lischka

    Article first published online : 5 AUG 2003, DOI: 10.1002/pssc.200303133

  19. Radio-frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero-structure

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1383–1387, T. Kikuchi, A. S. Somintac, M. Odawara, T. Udagawa and T. Ohachi

    Article first published online : 24 MAY 2006, DOI: 10.1002/pssc.200565428

  20. Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon

    physica status solidi (c)

    Volume 0, Issue 6, September 2003, Pages: 1583–1606, A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen and A. Krost

    Article first published online : 5 AUG 2003, DOI: 10.1002/pssc.200303122