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There are 7675948 results for: content related to: X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers

  1. State of Stress and Critical Thickness of Strained Small-Area SiGe Layers

    physica status solidi (a)

    Volume 171, Issue 2, February 1999, Pages: 475–485, A. Fischer, H. Kühne, G. Lippert, H. Richter and B. Tillack

    Article first published online : 18 FEB 1999, DOI: 10.1002/(SICI)1521-396X(199902)171:2<475::AID-PSSA475>3.0.CO;2-C

  2. Extended defects in ion assisted MBE grown SiGe/Si-nanostructures

    physica status solidi (c)

    Volume 6, Issue 8, August 2009, Pages: 1922–1926, P. I. Gaiduk

    Article first published online : 9 JUN 2009, DOI: 10.1002/pssc.200881437

  3. Nucleation, Glide Velocity and Blocking of Misfit Dislocations in SiGe/Si

    Crystal Research and Technology

    Volume 33, Issue 4, 1998, Pages: 593–604, R. Köhler, J.-U. Pfeifer, H. Raidt, W. Neumann, P. Zaumseil and U. Richter

    Article first published online : 14 DEC 1998, DOI: 10.1002/(SICI)1521-4079(1998)33:4<593::AID-CRAT593>3.0.CO;2-I

  4. Self-assembled Au dots in SiGe/Si layers for plasmonic application

    physica status solidi (a)

    Volume 211, Issue 11, November 2014, Pages: 2455–2460, Peter I. Gaiduk and Arne Nylandsted Larsen

    Article first published online : 3 OCT 2014, DOI: 10.1002/pssa.201400081

  5. From Thin Si/SiGe Buffers to SSOI

    Nanoscale CMOS

    S. Mantl, D. Buca, Pages: 127–156, 2013

    Published Online : 5 MAR 2013, DOI: 10.1002/9781118621523.ch4

  6. Silicon-Based Heterostructures: Strained-Layer Growth by Molecular Beam Epitaxy

    Crystal Research and Technology

    Volume 34, Issue 5-6, June 1999, Pages: 583–595, M. A. Herman

    Article first published online : 7 JUN 1999, DOI: 10.1002/(SICI)1521-4079(199906)34:5/6<583::AID-CRAT583>3.0.CO;2-X

  7. Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy

    physica status solidi (a)

    Volume 211, Issue 2, February 2014, Pages: 509–513, P. Periwal, F. Bassani, G. Patriarche, L. Latu-Romain, V. Brouzet, B. Salem and T. Baron

    Article first published online : 28 JAN 2014, DOI: 10.1002/pssa.201300208

  8. Improvement of thermal stability of boron in SiGeB/Si heterostructure by stress compensation

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 77, Issue 5, May 1994, Pages: 47–56, Junichi Sakano and Seijiro Furukawa

    Article first published online : 22 MAR 2007, DOI: 10.1002/ecjb.4420770506

  9. Quantitative profiling of SiGe/Si superlattices by time-of-flight secondary ion mass spectrometry: the advantages of the extended Full Spectrum protocol

    Rapid Communications in Mass Spectrometry

    Volume 25, Issue 5, 15 March 2011, Pages: 629–638, M. Py, J. P. Barnes, D. Lafond and J. M. Hartmann

    Article first published online : 1 FEB 2011, DOI: 10.1002/rcm.4904

  10. Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

    Progress in Photovoltaics: Research and Applications

    Volume 10, Issue 6, September 2002, Pages: 417–426, S. A. Ringel, J. A. Carlin, C. L. Andre, M. K. Hudait, M. Gonzalez, D. M. Wilt, E. B. Clark, P. Jenkins, D. Scheiman, A. Allerman, E. A. Fitzgerald and C. W. Leitz

    Article first published online : 27 AUG 2002, DOI: 10.1002/pip.448

  11. Dislocations in Relaxed SiGe/Si Heterostructures

    physica status solidi (a)

    Volume 171, Issue 1, January 1999, Pages: 227–238, E. A. Fitzgerald, M. T. Currie, S. B. Samavedam, T. A. Langdo, G. Taraschi, V. Yang, C. W. Leitz and M. T. Bulsara

    Article first published online : 29 JAN 1999, DOI: 10.1002/(SICI)1521-396X(199901)171:1<227::AID-PSSA227>3.0.CO;2-Y

  12. Thermally induced strain relaxation in SiGe/Si heterostructures with low-temperature buffer layers

    physica status solidi (c)

    Volume 2, Issue 6, April 2005, Pages: 1938–1942, V. I. Vdovin, T. G. Yugova, M. M. Rzaev, F. Schäffler and M.G. Mil'vidskii

    Article first published online : 4 APR 2005, DOI: 10.1002/pssc.200460529

  13. Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

    physica status solidi (c)

    Volume 8, Issue 3, March 2011, Pages: 915–918, Thierry Kociniewski, Frédéric Fossard, Jean-Luc Perrossier, Dominique Débarre and Jacques Boulmer

    Article first published online : 20 JAN 2011, DOI: 10.1002/pssc.201000345

  14. Strained Si and Ge Channels

    Nanoscale CMOS

    D. Leadley, A. Dobbie, M. Myronov, V. Shah, E. Parker, Pages: 69–126, 2013

    Published Online : 5 MAR 2013, DOI: 10.1002/9781118621523.ch3

  15. Effect of Ge content and profile in the SiGe base on the performance of a SiGe/Si heterojunction bipolar transistor

    Microwave and Optical Technology Letters

    Volume 47, Issue 3, 5 November 2005, Pages: 247–254, Mukul K. Das, N. R. Das and P. K. Basu

    Article first published online : 1 SEP 2005, DOI: 10.1002/mop.21138

  16. Quasi-two-dimensional electron–hole liquid and biexcitons in SiGe layers of Si/SiGe/Si heterostructures

    physica status solidi (c)

    Volume 8, Issue 4, April 2011, Pages: 1186–1189, Denis Shepel, Timur Burbaev, Nikolai Sibeldin and Mikhail Skorikov

    Article first published online : 25 JAN 2011, DOI: 10.1002/pssc.201000821

  17. Numerical investigation of nanoscale SiGe DG MOSFET performance against the interfacial defects

    physica status solidi (c)

    Volume 12, Issue 1-2, January 2015, Pages: 131–135, Toufik Bentrcia, Fayçal Djeffal, Zouhir Dibi and Djemai Arar

    Article first published online : 20 NOV 2014, DOI: 10.1002/pssc.201400088

  18. Formation of extended defects in SiGe/Si heterostructures with SiGeC intermediate layers

    physica status solidi (c)

    Volume 4, Issue 8, July 2007, Pages: 3043–3047, V. I. Vdovin, T. A. Torack, Lu Fei, V. Ya. Reznik, M. G. Mil'vidskii and R. Falster

    Article first published online : 30 MAY 2007, DOI: 10.1002/pssc.200675495

  19. The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy

    physica status solidi (a)

    Volume 210, Issue 1, January 2013, Pages: 187–190, Thomas Walther, David J. Norris, Yang Qiu, Andrew Dobbie, Maksym Myronov and David R. Leadley

    Article first published online : 22 NOV 2012, DOI: 10.1002/pssa.201200363

  20. Critical Dose for Strained Layer Configurations

    physica status solidi (a)

    Volume 155, Issue 1, 16 May 1996, Pages: 141–146, A. Fischer and H. Kühne

    Article first published online : 16 FEB 2006, DOI: 10.1002/pssa.2211550112