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There are 7757 results for: content related to: Transmission electron microscopy analysis of extended defects in multicrystalline silicon using in-situ EBIC/FIB sample preparation

  1. Effect of metal contamination on recombination properties of extended defects in multicrystalline Si

    physica status solidi (c)

    Volume 9, Issue 10-11, October 2012, Pages: 1942–1946, O. V. Feklisova, X. Yu, D. Yang and E. B. Yakimov

    Article first published online : 13 AUG 2012, DOI: 10.1002/pssc.201200138

  2. Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography

    Progress in Photovoltaics: Research and Applications

    Andreas Stoffers, Oana Cojocaru-Mirédin, Winfried Seifert, Stefan Zaefferer, Stephan Riepe and Dierk Raabe

    Article first published online : 8 MAY 2015, DOI: 10.1002/pip.2614

  3. Gettering Processes and the Role of Extended Defects

    Advanced Silicon Materials for Photovoltaic Applications

    Michael Seibt, Vitaly Kveder, Pages: 127–188, 2012

    Published Online : 13 JUN 2012, DOI: 10.1002/9781118312193.ch4

  4. Effect of P-induced gettering on extended defects in n-type multicrystalline silicon

    Progress in Photovoltaics: Research and Applications

    Volume 15, Issue 5, August 2007, Pages: 375–386, M. Acciarri, S. Binetti, A. Le Donne, S. Marchionna, M. Vimercati, J. Libal, R. Kopecek and K. Wambach

    Article first published online : 5 FEB 2007, DOI: 10.1002/pip.744

  5. Control of extended defects in cast multicrystalline silicon using polycrystalline template

    physica status solidi (c)

    Ronit R. Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada and Takashi Sekiguchi

    Article first published online : 24 APR 2015, DOI: 10.1002/pssc.201400299

  6. Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique

    Scanning

    Volume 30, Issue 4, July/August 2008, Pages: 347–353, J. Chen, X. Yuan and T. Sekiguchi

    Article first published online : 9 JUL 2008, DOI: 10.1002/sca.20116

  7. Grain Boundaries in Multicrystalline Silicon. Characterization by Admittance and EBIC Measurements

    physica status solidi (a)

    Volume 137, Issue 2, 16 June 1993, Pages: 463–484, C. Hässler, G. Pensl, M. Schulz, A. Voigt and H. P. Strunk

    Article first published online : 15 FEB 2006, DOI: 10.1002/pssa.2211370218

  8. Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects

    Progress in Photovoltaics: Research and Applications

    Volume 21, Issue 7, November 2013, Pages: 1444–1453, Jan Bauer, Dominik Lausch, Horst Blumtritt, Nikolai Zakharov and Otwin Breitenstein

    Article first published online : 2 JUN 2012, DOI: 10.1002/pip.2220

  9. Electron-beam-induced current study of grain boundaries in multicrystalline Si

    physica status solidi (c)

    Volume 4, Issue 8, July 2007, Pages: 2908–2917, Jun Chen, Takashi Sekiguchi and Deren Yang

    Article first published online : 22 MAY 2007, DOI: 10.1002/pssc.200675435

  10. Enhanced diffusion of phosphorus at grain boundaries in multicrystalline silicon

    Crystal Research and Technology

    Volume 29, Issue 8, 1994, Pages: 1123–1129, K. Schimpf, Dr. J. Palm and Prof. Dr. H. Alexander

    Article first published online : 19 FEB 2006, DOI: 10.1002/crat.2170290815

  11. EBIC and luminescence studies of defects in solar cells

    Scanning

    Volume 30, Issue 4, July/August 2008, Pages: 331–338, O. Breitenstein, J. Bauer, M. Kittler, T. Arguirov and W. Seifert

    Article first published online : 16 JUN 2008, DOI: 10.1002/sca.20112

  12. Characterization of thin-film a-Si:H/µc-Si:H tandem solar cells on glass substrates

    Crystal Research and Technology

    Volume 48, Issue 5, May 2013, Pages: 279–286, A. Klossek, C. Krause, T. Arguirov, H.-M. Krause, W. Seifert, F. Friedrich, S. Calnan, O. Gabriel, B. Stannowski and M. Kittler

    Article first published online : 30 APR 2013, DOI: 10.1002/crat.201200489

  13. Luminescence of defects and breakdown sites in multicrystalline silicon solar cells

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1908–1912, D. Mankovics, A. Klossek, Ch. Krause, T. Arguirov, W. Seifert and M. Kittler

    Article first published online : 23 JUL 2012, DOI: 10.1002/pssa.201200133

  14. Electrical and optical activities of small angle grain boundaries in multicrystalline Si

    physica status solidi (c)

    Volume 8, Issue 4, April 2011, Pages: 1347–1350, Takashi Sekiguchi, Jun Chen, Woong Lee and Hisashi Onodera

    Article first published online : 3 MAR 2011, DOI: 10.1002/pssc.201084024

  15. The role of stacking faults for the formation of shunts during potential-induced degradation of crystalline Si solar cells

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 5, May 2013, Pages: 315–318, Volker Naumann, Dominik Lausch, Andreas Graff, Martina Werner, Sina Swatek, Jan Bauer, Angelika Hähnel, Otwin Breitenstein, Stephan Großer, Jörg Bagdahn and Christian Hagendorf

    Article first published online : 14 MAR 2013, DOI: 10.1002/pssr.201307090

  16. Shunt types in crystalline silicon solar cells

    Progress in Photovoltaics: Research and Applications

    Volume 12, Issue 7, November 2004, Pages: 529–538, O. Breitenstein, J. P. Rakotoniaina, M. H. Al Rifai and M. Werner

    Article first published online : 29 JUL 2004, DOI: 10.1002/pip.544

  17. From electronic grade to solar grade silicon: chances and challenges in photovoltaics

    physica status solidi (a)

    Volume 202, Issue 15, December 2005, Pages: 2928–2942, S. Pizzini, M. Acciarri and S. Binetti

    Article first published online : 8 NOV 2005, DOI: 10.1002/pssa.200521104

  18. You have free access to this content
    Defect generation, advanced crystallization, and characterization methods for high-quality solar-cell silicon

    physica status solidi (a)

    Volume 210, Issue 4, April 2013, Pages: 641–648, Marisa Di Sabatino and Gaute Stokkan

    Article first published online : 22 OCT 2012, DOI: 10.1002/pssa.201200639

  19. Structure and recombination properties of extended defects in the dislocation slip plane in silicon

    physica status solidi (c)

    Volume 4, Issue 8, July 2007, Pages: 3100–3104, V. Eremenko, E. Yakimov and N. Abrosimov

    Article first published online : 30 MAY 2007, DOI: 10.1002/pssc.200675462

  20. New Materials: Semiconductors for Solar Cells

    Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

    Kenneth A. Jackson, Wolfgang Schröter, Pages: 715–769, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621842.ch12