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There are 40667 results for: content related to: The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys

  1. Adsorption-Induced Restructuring and Early Stages of Carbon-Nanotube Growth on Ni Nanoparticles

    Chemistry - A European Journal

    Volume 19, Issue 1, January 2, 2013, Pages: 406–413, Dr. Yuexia Wang, Dr. Giovanni Barcaro, Dr. Fabio R. Negreiros, Dr. Thierry Visart de Bocarmé, Dr. Mathieu Moors, Dr. Norbert Kruse, Dr. Marc Hou and Dr. Alessandro Fortunelli

    Version of Record online : 21 NOV 2012, DOI: 10.1002/chem.201201331

  2. 2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1902–1907, J. Vanhellemont, H. Yasuda, Y. Tokumoto, Y. Ohno, M. Suezawa and I. Yonenaga

    Version of Record online : 23 JUL 2012, DOI: 10.1002/pssa.201200023

  3. Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM

    physica status solidi (a)

    Volume 171, Issue 1, January 1999, Pages: 147–158, L. Fedina, A. Gutakovskii, A. Aseev, J. Van Landuyt and J. Vanhellemont

    Version of Record online : 29 JAN 1999, DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U

  4. In-situ Observations of Nanoscale Effects in Germanium Nanowire Growth with Ternary Eutectic Alloys


    Volume 11, Issue 1, January 7, 2015, Pages: 103–111, Subhajit Biswas, Colm O'Regan, Michael A. Morris and Justin D. Holmes

    Version of Record online : 5 SEP 2014, DOI: 10.1002/smll.201401240

  5. In Situ HREM Irradiation Study of an Intrinsic Point Defects Clustering in FZ-Si

    Crystal Research and Technology

    Volume 35, Issue 6-7, July 2000, Pages: 775–786, L. Fedina, A. Gutakovskii and A. Aseev

    Version of Record online : 6 NOV 2000, DOI: 10.1002/1521-4079(200007)35:6/7<775::AID-CRAT775>3.0.CO;2-3

  6. Implantation of Aluminium in Silicon. Simultaneous Showing ol Self-Si Defects and of Al Precipitates

    physica status solidi (a)

    Volume 112, Issue 2, 16 April 1989, Pages: 511–518, E. L. Mathé and J. C. Desoyer

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssa.2211120206

  7. Reconstruction of crystal shapes by X-ray nanodiffraction from three-dimensional superlattices

    Journal of Applied Crystallography

    Volume 47, Issue 6, December 2014, Pages: 2030–2037, Mojmír Meduňa, Claudiu V. Falub, Fabio Isa, Daniel Chrastina, Thomas Kreiliger, Giovanni Isella and Hans von Känel

    DOI: 10.1107/S1600576714023772

  8. In-situ HVEM study of the influence of localised strain, interfaces, and extrinsic point defects on {113}-defect generation in silicon

    physica status solidi (a)

    Volume 138, Issue 2, 16 August 1993, Pages: 417–424, J. Vanhellemont and A. Romano-rodríguez

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211380208

  9. A comparative analysis of oxidation rates for thin films of SiGe versus Si

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1934–1939, Ethan Long, Augustinas Galeckas and Andrej Yu. Kuznetsov

    Version of Record online : 9 AUG 2012, DOI: 10.1002/pssa.201200092

  10. Analysis of rod-like defects in silicon and germanium by means of high-resolution electron microscopy

    physica status solidi (a)

    Volume 80, Issue 1, 16 November 1983, Pages: 135–139, M. Pasemann, D. Hoehl, A. L. Aseev and O. P. Pchelyakov

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210800114

  11. Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

    Microscopy Research and Technique

    Volume 40, Issue 4, 15 February 1998, Pages: 313–335, S. Takeda

    Version of Record online : 7 DEC 1998, DOI: 10.1002/(SICI)1097-0029(19980215)40:4<313::AID-JEMT6>3.0.CO;2-S

  12. Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM

    physica status solidi (c)

    Volume 12, Issue 8, August 2015, Pages: 1160–1165, J. Vanhellemont, S. Anada, T. Nagase, H. Yasuda, A. Schulze, H. Bender, R. Rooyackers and A. Vandooren

    Version of Record online : 13 MAY 2015, DOI: 10.1002/pssc.201400222

  13. Defects in implanted and Czochralski silicon

    Crystal Research and Technology

    Volume 18, Issue 1, 1983, Pages: 15–20, Dr. I. G. Salisbury

    Version of Record online : 5 APR 2006, DOI: 10.1002/crat.2170180105

  14. The Nature And Origin Of {113} Faults In Irradiated Silicon And Germanium

    Journal of Microscopy

    Volume 118, Issue 1, January 1980, Pages: 75–81, I. G. Salisbury

    Version of Record online : 2 AUG 2011, DOI: 10.1111/j.1365-2818.1980.tb00248.x

  15. Tem method for identification of domains in materials which undergo a Pm3m [RIGHTWARDS ARROW] R3c or R3c phase transition

    physica status solidi (a)

    Volume 55, Issue 2, 16 October 1979, Pages: 747–750, J. B. Bilde-Sørensen

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210550246

  16. Quantitative zone-axis convergent-beam electron diffraction (CBED) studies of metals. II. Debye–Waller-factor measurements

    Acta Crystallographica Section A

    Volume 55, Issue 3, May 1999, Pages: 480–488, M. Saunders, A. G. Fox and P. A. Midgley

    DOI: 10.1107/S0108767398016316

  17. A `static' high-resolution X-ray diffractometer

    Journal of Applied Crystallography

    Volume 38, Issue 1, February 2005, Pages: 62–68, Paul F. Fewster

    DOI: 10.1107/S0021889804026822

  18. The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe

    physica status solidi (a)

    Volume 171, Issue 1, January 1999, Pages: 383–388, V. Eremenko, N. Abrosimov and A. Fedorov

    Version of Record online : 29 JAN 1999, DOI: 10.1002/(SICI)1521-396X(199901)171:1<383::AID-PSSA383>3.0.CO;2-M

  19. Crystal orientations of β-Ga2O3 thin films formed on n-plane sapphire substrates

    physica status solidi (b)

    Volume 252, Issue 9, September 2015, Pages: 2117–2122, Shinji Nakagomi, Satoru Kaneko and Yoshihiro Kokubun

    Version of Record online : 6 JUL 2015, DOI: 10.1002/pssb.201552168

  20. Atomic structure of steps on Si(113) surfaces studied by direct HRTEM observation

    Surface and Interface Analysis

    Volume 30, Issue 1, August 2000, Pages: 288–291, Masaki Takeguchi, Yuan Wu and Kazuo Furuya

    Version of Record online : 5 SEP 2000, DOI: 10.1002/1096-9918(200008)30:1<288::AID-SIA786>3.0.CO;2-R