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There are 12302 results for: content related to: Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation

  1. On the nature of defects produced by motion of dislocations in silicon

    physica status solidi (a)

    Volume 212, Issue 8, August 2015, Pages: 1695–1703, M. A. Khorosheva, V. V. Kveder and M. Seibt

    Version of Record online : 10 JUN 2015, DOI: 10.1002/pssa.201532153

  2. You have full text access to this Open Access content
    Scanning deep level transient spectroscopy (SDLTS)


    Volume 7, Issue 6, 1985, Pages: 273–289, O. Breitenstein and J. Heydenreich

    Version of Record online : 9 AUG 2011, DOI: 10.1002/sca.4950070602

  3. Evaluation of Deep Level Transient Spectra Originating from Continuous Distributions of Deep Energy Levels

    physica status solidi (a)

    Volume 124, Issue 1, 16 March 1991, Pages: 295–309, K. Tittelbach-Helmrich

    Version of Record online : 5 APR 2006, DOI: 10.1002/pssa.2211240128

  4. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 199–225, T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell

    Version of Record online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0

  5. A DLTS Study of InAs MIS Structures

    physica status solidi (a)

    Volume 117, Issue 2, 16 February 1990, Pages: 509–514, E. G. Salman, A. N. Korshunov and V. N. Vertoprakhov

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssa.2211170221

  6. Optical Excitation of DX Centers in GaAlAs Alloys Doped with Si and Te

    physica status solidi (b)

    Volume 167, Issue 1, 1 September 1991, Pages: 177–187, P. Seguy and P. Y. Yu

    Version of Record online : 19 FEB 2006, DOI: 10.1002/pssb.2221670120

  7. Electrical characterisation of GaN and AlGaN layers grown by plasma-assisted MBE

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 1043–1047, V. Kolkovsky, L. Scheffler, M. Sobanska, K. Klosek, Z. R. Zytkiewicz and J. Weber

    Version of Record online : 15 FEB 2012, DOI: 10.1002/pssc.201100138

  8. Analysis of DLTS Curves of Aggregated Deep Level Impurities

    physica status solidi (a)

    Volume 85, Issue 1, 16 September 1984, Pages: 219–226, K. žďánský and N. T. Thuc Hien

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2210850127

  9. DLTS study of a seeded physical vapor transport ZnSe schottky diode

    physica status solidi (a)

    Volume 146, Issue 2, 16 December 1994, Pages: 735–743, B. G. Markey, S. W. S. McKeever and G. Cantwell

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2211460218

  10. Practical methods to improve DLTS data smoothing

    physica status solidi (a)

    Volume 156, Issue 2, 16 August 1996, Pages: 413–420, E. Losson, K. Dmowski and B. Lepley

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211560219

  11. Analysis of DLTS Curves Corresponding to Non-Exponential Transients

    physica status solidi (a)

    Volume 81, Issue 1, 16 January 1984, Pages: 353–360, K. Žďánský and N. T. Thuc Hien

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210810139

  12. Photo-excited DLTS: Measurement of minority carrier traps

    Electronics and Communications in Japan (Part I: Communications)

    Volume 64, Issue 1, January 1981, Pages: 120–127, Masahiko Takikawa and Toshiaki Ikoma

    Version of Record online : 12 SEP 2008, DOI: 10.1002/ecja.4410640115

  13. The Broad Midgap Deep-Level Transient Spectroscopy Band in Proton (65 MeV) and Fast Neutron-Irradiated n-GaAs

    physica status solidi (b)

    Volume 212, Issue 2, April 1999, Pages: 229–239, V. N. Brudnyi, A. V. Gradoboev and V. V. Peshev

    Version of Record online : 1 APR 1999, DOI: 10.1002/(SICI)1521-3951(199904)212:2<229::AID-PSSB229>3.0.CO;2-N

  14. Defect studies on Ar-implanted ZnO thin films

    physica status solidi (b)

    Volume 251, Issue 5, May 2014, Pages: 937–941, Florian Schmidt, Stefan Müller, Rainer Pickenhain, Holger von Wenckstern, Sebastian Geburt, Carsten Ronning and Marius Grundmann

    Version of Record online : 11 MAR 2014, DOI: 10.1002/pssb.201451011

  15. Identification of carbon-hydrogen complexes in n- and p-type silicon

    physica status solidi (c)

    Volume 13, Issue 10-12, December 2016, Pages: 770–775, Ronald Stübner, Vladimir Kolkovsky, Leopold Scheffler and Joerg Weber

    Version of Record online : 11 JUL 2016, DOI: 10.1002/pssc.201600046

  16. Laplace DLTS studies on deep levels coexisted with InAs quantum dots

    physica status solidi (c)

    Volume 3, Issue 11, December 2006, Pages: 3844–3847, S. W. Lin, A. R. Peaker and A. M. Song

    Version of Record online : 22 NOV 2006, DOI: 10.1002/pssc.200671560

  17. Spatial Sensitivity Reversal in a Modified DLTS

    physica status solidi (a)

    Volume 132, Issue 1, 16 July 1992, Pages: 133–144, I. Thurzo and V. Nádaždy

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211320114

  18. A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing

    physica status solidi (a)

    Volume 212, Issue 3, March 2015, Pages: 495–505, M. L. Polignano, D. Codegoni, S. Grasso, I. Mica, G. Borionetti and A. Nutsch

    Version of Record online : 25 FEB 2015, DOI: 10.1002/pssa.201400082

  19. A capacitance meter of high absolute sensitivity suitable for scanning DLTS application

    physica status solidi (a)

    Volume 71, Issue 1, 16 May 1982, Pages: 159–167, O. Breitenstein

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2210710119

  20. DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C

    physica status solidi (a)

    Volume 100, Issue 2, 16 April 1987, Pages: 567–582, K. Schmalz, F.-G. Kirscht, H. Klose, H. Richter and K. Tittelbach-Helmrich

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211000223