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There are 115677 results for: content related to: Transfer of functional memory devices to any substrate

  1. Towards the Development of Flexible Non-Volatile Memories

    Advanced Materials

    Volume 25, Issue 38, October 11, 2013, Pages: 5425–5449, Su-Ting Han, Ye Zhou and V. A. L. Roy

    Version of Record online : 22 AUG 2013, DOI: 10.1002/adma.201301361

  2. Resistive-Switching Memory

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Daniele Ielmini

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W8222

  3. Resistance Random Access Memory Based on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis


    Volume 8, Issue 18, September 24, 2012, Pages: 2849–2855, Yong Chan Ju, Seungwook Kim, Tae-Geun Seong, Sahn Nahm, Haegeun Chung, Kwon Hong and Woong Kim

    Version of Record online : 22 JUN 2012, DOI: 10.1002/smll.201200488

  4. Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 1, January 2014, Pages: 100–104, Zhi-Wei Zheng, Hsiao-Hsuan Hsu and Chun-Hu Cheng

    Version of Record online : 23 OCT 2013, DOI: 10.1002/pssr.201308143

  5. RRAMs based on anionic and cationic switching: a short overview

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 6, June 2014, Pages: 501–511, Sergiu Clima, Kiroubanand Sankaran, Yang Yin Chen, Andrea Fantini, Umberto Celano, Attilio Belmonte, Leqi Zhang, Ludovic Goux, Bogdan Govoreanu, Robin Degraeve, Dirk J. Wouters, Malgorzata Jurczak, Wilfried Vandervorst, Stefan De Gendt and Geoffrey Pourtois

    Version of Record online : 4 APR 2014, DOI: 10.1002/pssr.201409054

  6. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage


    Volume 12, Issue 3, January 20, 2016, Pages: 390–396, Su-Ting Han, Ye Zhou, Bo Chen, Chundong Wang, Li Zhou, Yan Yan, Jiaqing Zhuang, Qijun Sun, Hua Zhang and V. A. L. Roy

    Version of Record online : 18 NOV 2015, DOI: 10.1002/smll.201502243

  7. A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

    physica status solidi (a)

    Volume 213, Issue 2, February 2016, Pages: 289–301, Francesco Maria Puglisi, Damien Deleruyelle, Jean-Michel Portal, Paolo Pavan and Luca Larcher

    Version of Record online : 20 JAN 2016, DOI: 10.1002/pssa.201532828

  8. A Parallel Circuit Model for Multi-State Resistive-Switching Random Access Memory

    Advanced Functional Materials

    Volume 22, Issue 3, February 8, 2012, Pages: 546–554, Albert B. K. Chen, Byung Joon Choi, Xiang Yang and I.-Wei Chen

    Version of Record online : 7 DEC 2011, DOI: 10.1002/adfm.201102208

  9. Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory

    Advanced Materials

    Donghee Son, Sue In Chae, Myungbin Kim, Moon Kee Choi, Jiwoong Yang, Kunsu Park, Vinayak S. Kale, Ja Hoon Koo, Changsoon Choi, Minbaek Lee, Ji Hoon Kim, Taeghwan Hyeon and Dae-Hyeong Kim

    Version of Record online : 29 AUG 2016, DOI: 10.1002/adma.201602391

  10. Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 5, May 2014, Pages: 431–435, Zhi-Wei Zheng, Hsiao-Hsuan Hsu, Chun-Hu Cheng and Po-Chun Chen

    Version of Record online : 22 APR 2014, DOI: 10.1002/pssr.201409039

  11. The glitch-induced identity changes of PSR J1119−6127

    Monthly Notices of the Royal Astronomical Society

    Volume 411, Issue 3, March 2011, Pages: 1917–1934, Patrick Weltevrede, Simon Johnston and Cristóbal M. Espinoza

    Version of Record online : 6 DEC 2010, DOI: 10.1111/j.1365-2966.2010.17821.x

  12. Comprehensive Writing Margin Analysis and its Application to Stacked one Diode-One Memory Device for High-Density Crossbar Resistance Switching Random Access Memory

    Advanced Electronic Materials

    Kyung Jean Yoon, Woorham Bae, Deog-Kyoon Jeong and Cheol Seong Hwang

    Version of Record online : 16 SEP 2016, DOI: 10.1002/aelm.201600326

  13. Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

    Advanced Materials

    Volume 23, Issue 7, February 15, 2011, Pages: 902–905, Chun-Hu Cheng, Fon-Shan Yeh and Albert Chin

    Version of Record online : 20 DEC 2010, DOI: 10.1002/adma.201002946

  14. Flexible Crossbar-Structured Resistive Memory Arrays on Plastic Substrates via Inorganic-Based Laser Lift-Off

    Advanced Materials

    Volume 26, Issue 44, November 26, 2014, Pages: 7480–7487, Seungjun Kim, Jung Hwan Son, Seung Hyun Lee, Byoung Kuk You, Kwi-Il Park, Hwan Keon Lee, Myunghwan Byun and Keon Jae Lee

    Version of Record online : 8 SEP 2014, DOI: 10.1002/adma.201402472

  15. Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 6, June 2015, Pages: 362–365, Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi and Cheol Seong Hwang

    Version of Record online : 6 MAY 2015, DOI: 10.1002/pssr.201510110

  16. Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

    physica status solidi (RRL) - Rapid Research Letters

    Volume 6, Issue 11, November 2012, Pages: 454–456, Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Jubong Park, Seonghyun Kim, Wootae Lee, Jungho Shin, Daeseok Lee, Godeuni Choi, Jiyong Woo, Euijun Cha, Byoung Hun Lee and Hyunsang Hwang

    Version of Record online : 15 OCT 2012, DOI: 10.1002/pssr.201206382

  17. Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories


    Volume 8, Issue 8, April 23, 2012, Pages: 1279–1284, Zhong-tang Xu, Kui-juan Jin, Lin Gu, Yu-ling Jin, Chen Ge, Can Wang, Hai-zhong Guo, Hui-bin Lu, Rui-qiang Zhao and Guo-zhen Yang

    Version of Record online : 20 FEB 2012, DOI: 10.1002/smll.201101796

  18. Forming-free resistive switching characteristics and improved reliability in sub-stoichiometric NbNx films

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 4, April 2015, Pages: 264–268, Hee-Dong Kim, Min Ju Yun and Tae Geun Kim

    Version of Record online : 6 MAR 2015, DOI: 10.1002/pssr.201510022

  19. You have free access to this content
    Differential modulation of E. coli mRNA abundance by inhibitory proteins that alter the composition of the degradosome

    Molecular Microbiology

    Volume 61, Issue 2, July 2006, Pages: 394–406, Junjun Gao, Kangseok Lee, Meng Zhao, Ji Qiu, Xiaoming Zhan, Ankur Saxena, Christopher J. Moore, Stanley N. Cohen and George Georgiou

    Version of Record online : 12 JUN 2006, DOI: 10.1111/j.1365-2958.2006.05246.x

  20. Role of rRAB22b, an oligodendrocyte protein, in regulation of transport of vesicles from trans Golgi to endocytic compartments

    Journal of Neuroscience Research

    Volume 66, Issue 6, 15 December 2001, Pages: 1149–1160, A.G. Rodriguez-Gabin, M. Cammer, G. Almazan, M. Charron and J.N. Larocca

    Version of Record online : 30 NOV 2001, DOI: 10.1002/jnr.1253