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There are 41620 results for: content related to: Electrical transport in C-doped GaAs nanowires: surface effects

  1. First-principles study of electronic properties of GaN nanowires: Effect of surface orientation, passivation, and Mn doping

    physica status solidi (b)

    Pankaj Srivastava, Avaneesh Kumar, Neeraj K. Jaiswal and Varun Sharma

    Version of Record online : 17 AUG 2016, DOI: 10.1002/pssb.201600296

  2. Carbon-doped p-type (0001) plane AlGaN (Al = 6–55%) with high hole density

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 459–463, Hideo Kawanishi and Tatsuya Tomizawa

    Version of Record online : 9 JAN 2012, DOI: 10.1002/pssb.201100316

  3. Role of PbSe Structural Stabilization in Photovoltaic Cells

    Advanced Functional Materials

    Volume 25, Issue 6, February 11, 2015, Pages: 928–935, Demet Asil, Brian J. Walker, Bruno Ehrler, Yana Vaynzof, Alessandro Sepe, Sam Bayliss, Aditya Sadhanala, Philip C. Y. Chow, Paul E. Hopkinson, Ullrich Steiner, Neil C. Greenham and Richard H. Friend

    Version of Record online : 22 DEC 2014, DOI: 10.1002/adfm.201401816

  4. Modeling study on the properties of GaN/AlN core/shell nanowires by surface effect suppression

    physica status solidi (b)

    Volume 249, Issue 6, June 2012, Pages: 1241–1249, Vu Ngoc Tuoc, Tran Doan Huan and Le Thi Hong Lien

    Version of Record online : 1 FEB 2012, DOI: 10.1002/pssb.201147514

  5. Effects of surface morphology and C concentration in C-doped GaN buffer on breakdown voltage of AlGaN/GaN HEMTs on free-standing GaN substrate

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1236–1240, Shinichi Tanabe, Noriyuki Watanabe, Masahiro Uchida and Hideaki Matsuzaki

    Version of Record online : 12 FEB 2016, DOI: 10.1002/pssa.201532781

  6. Template-Based Engineering of Carbon-Doped Co3O4 Hollow Nanofibers as Anode Materials for Lithium-Ion Batteries

    Advanced Functional Materials

    Volume 26, Issue 9, March 2, 2016, Pages: 1428–1436, Chunshuang Yan, Gang Chen, Xin Zhou, Jingxue Sun and Chade Lv

    Version of Record online : 5 FEB 2016, DOI: 10.1002/adfm.201504695

  7. Effect of defects in ferromagnetic C doped ZnO thin films

    physica status solidi (b)

    Volume 249, Issue 6, June 2012, Pages: 1254–1257, Munisamy Subramanian, Yuhei Akaike, Yasuhiko Hayashi, Masaki Tanemura, Hiroshi Ebisu and Daniel Lau Shu Ping

    Version of Record online : 21 FEB 2012, DOI: 10.1002/pssb.201147609

  8. Effect of Oxygen Segregation at Grain Boundaries on Deformation of B, C-Doped Silicon Carbides at Elevated Temperatures

    Journal of the American Ceramic Society

    Volume 88, Issue 6, June 2005, Pages: 1558–1563, Shigehiro Ohtsuka, Yutaka Shinoda, Takashi Akatsu and Fumihiro Wakai

    Version of Record online : 25 APR 2005, DOI: 10.1111/j.1551-2916.2005.00326.x

  9. Gliding Arc Plasma Synthesis of Visible-Light Active C-Doped Titania Photocatalysts

    Plasma Processes and Polymers

    Volume 12, Issue 5, May 2015, Pages: 422–430, Shi-Xin Liu, Jing-Lin Liu, Xiao-Song Li, Xiaobing Zhu and Ai-Min Zhu

    Version of Record online : 17 DEC 2014, DOI: 10.1002/ppap.201400158

  10. Increase of photoluminescence from fullerene-doped polymers under laser irradiation

    Polymer Engineering & Science

    Volume 41, Issue 9, September 2001, Pages: 1580–1588, G. Z. Li, N. Minami and Y. Ichio

    Version of Record online : 7 APR 2004, DOI: 10.1002/pen.10856

  11. You have full text access to this OnlineOpen article
    Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

    Progress in Photovoltaics: Research and Applications

    Volume 22, Issue 10, October 2014, Pages: 1023–1029, Bart Vermang, Jörn Timo Wätjen, Viktor Fjällström, Fredrik Rostvall, Marika Edoff, Ratan Kotipalli, Frederic Henry and Denis Flandre

    Version of Record online : 2 JUL 2014, DOI: 10.1002/pip.2527

  12. Negative bias illumination stress assessment of indium gallium zinc oxide thin-film transistors

    Journal of the Society for Information Display

    Volume 23, Issue 5, May 2015, Pages: 187–195, Ken Hoshino and John Wager

    Version of Record online : 30 SEP 2015, DOI: 10.1002/jsid.267

  13. Reduction of peak electric field strength in GaN-HEMT with carbon doping layer

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 915–918, Tetsuo Narita, Daigo Kikuta, Hiroko Iguchi, Kenji Ito, Kazuyoshi Tomita, Tsutomu Uesugi and Tetsu Kachi

    Version of Record online : 13 JAN 2012, DOI: 10.1002/pssc.201100331

  14. Carbon-Doped Boron Nitride Nanosheets with Ferromagnetism above Room Temperature

    Advanced Functional Materials

    Volume 24, Issue 38, October 15, 2014, Pages: 5985–5992, Chong Zhao, Zhi Xu, Hao Wang, Jiake Wei, Wenlong Wang, Xuedong Bai and Enge Wang

    Version of Record online : 22 JUL 2014, DOI: 10.1002/adfm.201401149

  15. Quantum chemical simulations of doped ZnO nanowires for photocatalytic hydrogen generation

    physica status solidi (b)

    Yuri F. Zhukovskii, Sergei Piskunov, Oleg Lisovski, Eckhard Spohr and Robert A. Evarestov

    Version of Record online : 1 AUG 2016, DOI: 10.1002/pssb.201600452

  16. Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1229–1235, Jie Hu, Steve Stoffels, Silvia Lenci, Shuzhen You, Benoit Bakeroot, Nicolò Ronchi, Rafael Venegas, Guido Groeseneken and Stefaan Decoutere

    Version of Record online : 2 MAY 2016, DOI: 10.1002/pssa.201532797

  17. Bandgap Engineering and Mechanism Study of Nonmetal and Metal Ion Codoped Carbon Nitride: C+Fe as an Example

    Chemistry - A European Journal

    Volume 20, Issue 31, July 28, 2014, Pages: 9805–9812, Shouwei Zhang, Jiaxing Li, Meiyi Zeng, Jie Li, Prof. Jinzhang Xu and Prof. Xiangke Wang

    Version of Record online : 2 JUL 2014, DOI: 10.1002/chem.201400060

  18. Tuning Hydrogen Storage in Lithium-Functionalized BC2N Sheets by Doping with Boron and Carbon

    ChemPhysChem

    Volume 15, Issue 14, October 6, 2014, Pages: 3015–3025, Nian-xiang Qiu, Cheng-hua Zhang and Prof. Ying Xue

    Version of Record online : 23 JUL 2014, DOI: 10.1002/cphc.201402246

  19. MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

    physica status solidi (c)

    Volume 13, Issue 5-6, May 2016, Pages: 311–316, Ming Zhao, Hu Liang, Prem Kumar Kandaswamy, Marleen Van Hove, Rafael Venegas, Evi Vranken, Paola Favia, Annelies Vanderheyden, Danielle Vanhaeren, Yoga Nrusimha Saripalli, Stefaan Decoutere and Robert Langer

    Version of Record online : 27 JAN 2016, DOI: 10.1002/pssc.201510280

  20. Giant Enhancement of Internal Electric Field Boosting Bulk Charge Separation for Photocatalysis

    Advanced Materials

    Volume 28, Issue 21, June 1, 2016, Pages: 4059–4064, Jie Li, Lejuan Cai, Jian Shang, Ying Yu and Lizhi Zhang

    Version of Record online : 22 MAR 2016, DOI: 10.1002/adma.201600301