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There are 274396 results for: content related to: Structural and optical properties of Al x Ga 1– x N nanowires

  1. Ordering in cubic AlxGa1–xN and InxGa1–xN alloys due to biaxial strain

    physica status solidi (c)

    Volume 1, Issue S2, August 2004, Pages: S198–S201, Luiz G. Ferreira, Lara K. Teles, José R. Leite and Luísa M. R. Scolfaro

    Article first published online : 10 SEP 2004, DOI: 10.1002/pssc.200405140

  2. Growth and properties of InGaAs nanowires on silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 1, January 2014, Pages: 11–30, Gregor Koblmüller and Gerhard Abstreiter

    Article first published online : 2 DEC 2013, DOI: 10.1002/pssr.201308207

  3. Top- and bottom-illumination of solar-blind AlGaN metal–semiconductor–metal photodetectors

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1021–1028, Moritz Brendel, Markus Helbling, Arne Knauer, Sven Einfeldt, Andrea Knigge and Markus Weyers

    Article first published online : 20 JAN 2015, DOI: 10.1002/pssa.201431720

  4. One-Dimensional CdS Nanostructures: A Promising Candidate for Optoelectronics

    Advanced Materials

    Volume 25, Issue 22, June 11, 2013, Pages: 3017–3037, Huiqiao Li, Xi Wang, Junqi Xu, Qi Zhang, Yoshio Bando, Dmitri Golberg, Ying Ma and Tianyou Zhai

    Article first published online : 30 APR 2013, DOI: 10.1002/adma.201300244

  5. Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 10, October 2013, Pages: 864–867, M. Gómez-Gómez, N. Garro, J. Segura-Ruiz, G. Martínez-Criado, M. H. Chu, A. Cantarero, C. Denker, J. Malindretos and A. Rizzi

    Article first published online : 25 JUN 2013, DOI: 10.1002/pssr.201307244

  6. Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric-pressure MOVPE

    physica status solidi (a)

    Volume 209, Issue 5, May 2012, Pages: 977–983, A. Touré, I. Halidou, Z. Benzarti, A. Fouzri, A. Bchetnia and B. El Jani

    Article first published online : 13 FEB 2012, DOI: 10.1002/pssa.201127529

  7. Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

    physica status solidi (c)

    S. V. Novikov, C. R. Staddon, S.-L. Sahonta, R. A. Oliver, C. J. Humphreys and C. T. Foxon

    Article first published online : 25 FEB 2016, DOI: 10.1002/pssc.201510166

  8. On the behavior of silicon donor in conductive AlxGa1–xN (0.63 ≤ x ≤ 1)

    physica status solidi (b)

    Volume 252, Issue 6, June 2015, Pages: 1306–1310, D. Nilsson, X. T. Trinh, E. Janzén, N. T. Son and A. Kakanakova-Georgieva

    Article first published online : 21 JAN 2015, DOI: 10.1002/pssb.201451559

  9. The effects of Al on the neutral Mg acceptor impurity in AlxGa1-xN

    physica status solidi (c)

    Volume 12, Issue 4-5, April 2015, Pages: 357–360, U. R. Sunay, M. E. Zvanut and A. A. Allerman

    Article first published online : 18 MAR 2015, DOI: 10.1002/pssc.201400184

  10. InGaN Nanowire Heterostructures

    Wide Band Gap Semiconductor Nanowires 2

    Vincent Consonni, Guy Feuillets, Pages: 41–60, 2014

    Published Online : 8 AUG 2014, DOI: 10.1002/9781118984291.ch2

  11. Hierarchical Metal/Semiconductor Nanostructure for Efficient Water Splitting


    Volume 9, Issue 13, July 8, 2013, Pages: 2341–2347, Pradheep Thiyagarajan, Hyo-Jin Ahn, Jung-Soo Lee, Jong-Chul Yoon and Ji-Hyun Jang

    Article first published online : 6 JAN 2013, DOI: 10.1002/smll.201202756

  12. XRD, AFM and IR investigations of ordered AlGaAs2 phase in epitaxial AlxGa1–xAs/GaAs (100) heterostructures

    Surface and Interface Analysis

    Volume 38, Issue 4, April 2006, Pages: 828–832, E. P. Domashevskaya, P. V. Seredin, A. N. Lukin, L. A. Bityutskaya, M. V. Grechkina, I. N. Arsentyev, D. A. Vinokurov and I. S. Tarasov

    Article first published online : 29 MAR 2006, DOI: 10.1002/sia.2306

  13. Mass Transport of AlxGa1—xN

    physica status solidi (a)

    Volume 194, Issue 2, December 2002, Pages: 485–488, S. Nitta, Y. Yukawa, Y. Watanabe, S. Kamiyama, H. Amano and I. Akasaki

    Article first published online : 4 DEC 2002, DOI: 10.1002/1521-396X(200212)194:2<485::AID-PSSA485>3.0.CO;2-#

  14. Effects of AlGaN delta-layer insertion on light emission characteristics of ultraviolet AlGaN/AlN quantum well structures

    physica status solidi (b)

    Volume 252, Issue 8, August 2015, Pages: 1844–1847, Seoung-Hwan Park and Daewoong Suh

    Article first published online : 23 MAR 2015, DOI: 10.1002/pssb.201552052

  15. Intentional Control of n-type Conduction for Si-doped AlN and AlxGa1—xN with High Al Content

    physica status solidi (b)

    Volume 234, Issue 3, December 2002, Pages: 845–849, Y. Taniyasu, M. Kasu and N. Kobayashi

    Article first published online : 3 DEC 2002, DOI: 10.1002/1521-3951(200212)234:3<845::AID-PSSB845>3.0.CO;2-0

  16. Exploring Single Semiconductor Nanowires with a Multimodal Hard X-ray Nanoprobe

    Advanced Materials

    Volume 26, Issue 46, December 10, 2014, Pages: 7873–7879, Gema Martínez-Criado, Jaime Segura-Ruiz, Benito Alén, Joël Eymery, Andrei Rogalev, Rémi Tucoulou and Alejandro Homs

    Article first published online : 27 MAR 2014, DOI: 10.1002/adma.201304345

  17. Isoelectronic doping of AlGaN alloys

    physica status solidi (b)

    Volume 240, Issue 2, November 2003, Pages: 408–411, S. V. Novikov, L. X. Zhao, I. Harrison and C. T. Foxon

    Article first published online : 30 SEP 2003, DOI: 10.1002/pssb.200303257

  18. Multifunctional Nanochemistry: Ambient, Electroless, Template-Based Synthesis and Characterization of Segmented Bimetallic Pd/Au and Pd/Pt Nanowires as High-Performance Electrocatalysts and Nanomotors

    Israel Journal of Chemistry

    Volume 52, Issue 11-12, December 2012, Pages: 1090–1103, Christopher Koenigsmann, Zhibo Tan, Huiqing Peng, Eli Sutter, Jared Jacobskind and Stanislaus S. Wong

    Article first published online : 11 DEC 2012, DOI: 10.1002/ijch.201200052

  19. Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

    physica status solidi (c)

    Volume 1, Issue 6, April 2004, Pages: 1537–1548, H. P. D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, S. Grzanka, M. Krysko, P. Prystawko, P. Wisniewski, M. Leszczynski, H. Teisseyre, G. Franssen, J. Muszalski, T. Suski and P. Perlin

    Article first published online : 18 FEB 2004, DOI: 10.1002/pssc.200304099

  20. Influence of the illumination on the spin splitting of the two-dimensional electron gas in AlxGa1–xN/GaN heterostructures

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 2339–2341, N. Tang, B. Shen, X. W. He, K. Han, Y. Q. Tang, Z. J. Yang, Z. X. Qin, G. Y. Zhang, T. Lin, B. Zhu, W. Z. Zhou, L. Y. Shang and J. H. Chu

    Article first published online : 26 MAR 2008, DOI: 10.1002/pssc.200778465