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There are 7004327 results for: content related to: Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): technological challenges and future developments

  1. Silicon Field Emitter Arrays

    Vacuum Microelectronics

    Jonathan Shaw, Junji Itoh, Pages: 187–246, 2002

    Published Online : 15 APR 2002, DOI: 10.1002/0471224332.ch5

  2. Vertical double-gate MOSFET device technology

    Electronics and Communications in Japan

    Volume 91, Issue 1, January 2008, Pages: 46–51, Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa and Eiichi Suzuki

    Version of Record online : 19 SEP 2008, DOI: 10.1002/ecj.10021

  3. Compact Models for Advanced CMOS Devices

    Nanoscale CMOS

    B. Iñiguez, F. Lime, A. Lázaro, T. A. Fjeldly, Pages: 381–442, 2013

    Published Online : 5 MAR 2013, DOI: 10.1002/9781118621523.ch11

  4. An analytical two-dimensional model for an optically controlled thin-film fully depleted surrounding/cylindrical-gate (SGT) MOSFET

    Microwave and Optical Technology Letters

    Volume 28, Issue 2, 20 January 2001, Pages: 135–141, Abhinav Kranti, S. Haldar and R. S. Gupta

    Version of Record online : 11 DEC 2000, DOI: 10.1002/1098-2760(20010120)28:2<135::AID-MOP18>3.0.CO;2-F

  5. 43.1: Invited Paper: Active-Matrix Field-Emitter Arrays for the Next-Generation FEDs

    SID Symposium Digest of Technical Papers

    Volume 30, Issue 1, May 1999, Pages: 922–925, J. Itoh, S. Kanemaru and T. Matsukawa

    Version of Record online : 5 JUL 2012, DOI: 10.1889/1.1834175

  6. Semi-analytical modelling of short channel effects in Si double gate, tri-gate and gate all-around MOSFETs

    physica status solidi (c)

    Volume 5, Issue 12, December 2008, Pages: 3605–3608, A. Tsormpatzoglou, C. A. Dimitriadis, R. Clerc, G. Pananakakis and G. Ghibaudo

    Version of Record online : 16 SEP 2008, DOI: 10.1002/pssc.200780111

  7. Non-Classical MOSFET Structures

    Compact Mosfet Models for VLSI Design

    A. B. Bhattacharyya, Pages: 383–413, 2010

    Published Online : 2 FEB 2010, DOI: 10.1002/9780470823446.ch8

  8. Compact current modeling of short-channel multiple gate MOSFETs

    physica status solidi (c)

    Volume 5, Issue 12, December 2008, Pages: 3609–3612, S. Kolberg, H. Børli and T. A. Fjeldly

    Version of Record online : 16 SEP 2008, DOI: 10.1002/pssc.200880125

  9. MOSFETs

    Guide to State-of-the-Art Electron Devices

    Hiroshi Iwai, Simon Min Sze, Yuan Taur, Hei Wong, Pages: 21–36, 2013

    Published Online : 25 FEB 2013, DOI: 10.1002/9781118517543.ch2

  10. Comparative study on nano-scale III-V double-gate MOSFETs with various channel materials

    physica status solidi (c)

    Volume 10, Issue 11, November 2013, Pages: 1413–1416, Akio Nishida, Kei Hasegawa, Ryoko Ohama, Sachie Fujikawa, Shinsuke Hara and Hiroki I. Fujishiro

    Version of Record online : 24 OCT 2013, DOI: 10.1002/pssc.201300264

  11. Two-dimensional numerical analysis of nanoscale junctionless and conventional Double Gate MOSFETs including the effect of interfacial traps

    physica status solidi (c)

    Volume 9, Issue 10-11, October 2012, Pages: 2041–2044, Elasaad Chebaki, Fayçal Djeffal and Toufik Bentrcia

    Version of Record online : 7 SEP 2012, DOI: 10.1002/pssc.201200128

  12. MOS Performance versus Drain Current, Inversion Coefficient, and Channel Length

    Tradeoffs and Optimization in Analog CMOS Design

    David M. Binkley, Pages: 33–294, 2008

    Published Online : 18 JUL 2008, DOI: 10.1002/9780470033715.ch3

  13. Wide Frequency Band Characterization

    Nanoscale CMOS

    D. Flandre, J.-p. Raskin, V. Kilchytska, Pages: 603–638, 2013

    Published Online : 5 MAR 2013, DOI: 10.1002/9781118621523.ch17

  14. Micro and nano on insulator

    physica status solidi (c)

    Volume 5, Issue 12, December 2008, Pages: 3588–3593, Sorin Cristoloveanu

    Version of Record online : 19 SEP 2008, DOI: 10.1002/pssc.200780195

  15. Explicit modelling of the double-gate MOSFET with VHDL-AMS

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    Volume 19, Issue 3, May/June 2006, Pages: 239–256, Fabien Prégaldiny, François Krummenacher, Birahim Diagne, François Pêcheux, Jean-Michel Sallese and Christophe Lallement

    Version of Record online : 22 MAR 2006, DOI: 10.1002/jnm.609

  16. Application of the Wigner Monte Carlo Method to RTD, MOSFET and CNTFET

    The Wigner Monte Carlo Method for Nanoelectronic Devices

    Damien Querlioz, Philippe Dollfus, Mireille Mouis, Pages: 89–150, 2013

    Published Online : 20 MAR 2013, DOI: 10.1002/9781118618479.ch3

  17. Monte Carlo analysis of dynamic characteristics and high-frequency noise performances of nanoscale double-gate MOSFETs

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    Volume 27, Issue 1, January/February 2014, Pages: 10–21, Yongbo Chen, Michael Jo, Mohamed Mohamed and Ruimin Xu

    Version of Record online : 4 MAR 2013, DOI: 10.1002/jnm.1886

  18. An accurate 2-D model for transconductance-to-current ratio and drain conductance of vertical surrounding-gate (VSG) MOSFETs for microwave circuit applications

    Microwave and Optical Technology Letters

    Volume 31, Issue 6, 20 December 2001, Pages: 415–421, Abhinav Kranti, Rashmi, S. Haldar and R. S. Gupta

    Version of Record online : 26 OCT 2001, DOI: 10.1002/mop.10051

  19. Nanowire Devices

    Beyond-CMOS Nanodevices 2

    Gérard Ghibaudo, Sylvain Barraud, Mikaël Cassé, Xin Peng Wang, Guo Qiang Lo, Dim-Lee Kwong, Marco Pala, Zheng Fang, Pages: 25–95, 2014

    Published Online : 3 JUN 2014, DOI: 10.1002/9781118985137.ch2

  20. Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    Volume 23, Issue 2, March/April 2010, Pages: 88–106, Joaquín Alvarado, Benjamin Iñiguez, Magali Estrada, Denis Flandre and Antonio Cerdeira

    Version of Record online : 30 JUL 2009, DOI: 10.1002/jnm.725