Search Results

There are 9244 results for: content related to: Opinion Columns

  1. Opinion, In Focus, Knowledge Exchange, and Section News published exclusively online

    Anthropology News

    Volume 53, Issue 7, September 2012, Pages: s1–s89,

    Article first published online : 15 JUL 2013, DOI: 10.1111/j.1556-3502.2012.53701_s.x

  2. Opinion, In Focus, Knowledge Exchange, and Section News published exclusively online

    Anthropology News

    Volume 53, Issue 8, October 2012, Pages: s1–s61,

    Article first published online : 23 JUL 2013, DOI: 10.1111/j.1556-3502.2012.53801_s.x

  3. Opinion, In Focus and Knowledge Exchange published exclusively online

    Anthropology News

    Volume 53, Issue 9, November 2012, Pages: s1–s46,

    Article first published online : 20 AUG 2013, DOI: 10.1111/j.1556-3502.2012.53901_s.x

  4. You have free access to this content
    Opinion, Knowledge Exchange, and Section News published exclusively online

    Anthropology News

    Volume 53, Issue 5, May 2012, Pages: s1–s19,

    Article first published online : 15 APR 2013, DOI: 10.1111/j.1556-3502.2012.53501_s.x

  5. Knowledge Exchange

    Anthropology News

    Volume 53, Issue 6, Summer 2012, Pages: S1–S14,

    Article first published online : 7 JUL 2013, DOI: 10.1111/j.1556-3502.2012.53603.x

  6. Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 2087–2090, In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov and S. J. Pearton

    Article first published online : 10 MAY 2006, DOI: 10.1002/pssc.200565195

  7. You have free access to this content
    Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+ Ion Implantation

    Chemical Vapor Deposition

    Volume 16, Issue 1-3, March 2010, Pages: 80–84, Bumjoon Kim, Kwangtaek Lee, Samseok Jang, Junggeun Jhin, Seungjae Lee, Jonghyeob Baek, Youngmoon Yu, Jaesang Lee and Dongjin Byun

    Article first published online : 22 MAR 2010, DOI: 10.1002/cvde.200906807

  8. Bowing of thick GaN layers grown by HVPE using ELOG

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1466–1470, Ch. Hennig, E. Richter, U. Zeimer, M. Weyers and G. Tränkle

    Article first published online : 24 MAY 2006, DOI: 10.1002/pssc.200565402

  9. Selective area growth of GaN on r-plane sapphire by MOCVD

    physica status solidi (c)

    Volume 10, Issue 3, March 2013, Pages: 373–376, Mariya M. Rozhavskaya, Wsevolod V. Lundin, Andrey E. Nikolaev, Evgeniy E. Zavarin, Sergey I. Troshkov, Pavel N. Brunkov and Andrey F. Tsatsulnikov

    Article first published online : 4 FEB 2013, DOI: 10.1002/pssc.201200545

  10. Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

    physica status solidi (a)

    Volume 201, Issue 12, September 2004, Pages: 2760–2763, Nikolaus Gmeinwieser, Karl Engl, Ulrich T. Schwarz, Josef Zweck, Werner Wegscheider, Stephan Miller, Andreas Leber, Andreas Weimar, Alfred Lell and Volker Härle

    Article first published online : 2 SEP 2004, DOI: 10.1002/pssa.200404998

  11. Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 445–448, Xingbin Li, Tongjun Yu, Yuebin Tao, Junjing Deng, Chenglong Xu and Guoyi Zhang

    Article first published online : 7 DEC 2011, DOI: 10.1002/pssc.201100409

  12. A TEM Evaluation of ELOG GaN Grown on AlN Buffer Layer by HVPE on (0001) 6H-SiC

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 697–700, P. Ruterana, B. Beaumont, P. Gibart and Yu. Melnik

    Article first published online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<697::AID-PSSB697>3.0.CO;2-L

  13. Non-polar (11equation image0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 698–701, Robert M. Emery, Tongtong Zhu, Fabrice Oehler, Benjamin Reid, Robert A. Taylor, Menno J. Kappers and Rachel A. Oliver

    Article first published online : 17 FEB 2014, DOI: 10.1002/pssc.201300525

  14. Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2732–2735, C. Q. Chen, V. Adivarahan, M. Shatalov, M. E. Gaevski, E. Kuokstis, J. W. Yang, H. P. Maruska, Z. Gong, M. Asif Khan, R. Liu, A. Bell and F. A. Ponce

    Article first published online : 15 MAR 2005, DOI: 10.1002/pssc.200461547

  15. Characteristics of Laser Diodes Composed of GaN-Based Semiconductor

    physica status solidi (a)

    Volume 190, Issue 1, March 2002, Pages: 235–246, S. Nagahama, T. Yanamoto, M. Sano and T. Mukai

    Article first published online : 26 MAR 2002, DOI: 10.1002/1521-396X(200203)190:1<235::AID-PSSA235>3.0.CO;2-Y

  16. Recent progress of nitride-based light emitting devices

    physica status solidi (a)

    Volume 200, Issue 1, November 2003, Pages: 52–57, T. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, Y. Narukawa, S. Yamamoto, I. Niki, M. Yamada, S. Sonobe, S. Shioji, K. Deguchi, T. Naitou, H. Tamaki, Y. Murazaki and M. Kameshima

    Article first published online : 29 SEP 2003, DOI: 10.1002/pssa.200303326

  17. Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si

    physica status solidi (c)

    Volume 9, Issue 7, July 2012, Pages: 1610–1613, Wondwosen Metaferia, Juha Tommila, Carl Junesand, Himanshu Kataria, Chen Hu, Mircea Guina, Tapio Niemi and Sebastian Lourdudoss

    Article first published online : 29 MAY 2012, DOI: 10.1002/pssc.201100678

  18. Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 2088–2090, T. J. Badcock, M. Häberlen, M. J. Kappers, M. A. Moram, P. Dawson, C. J. Humphreys and R. A. Oliver

    Article first published online : 31 MAY 2010, DOI: 10.1002/pssc.200983573

  19. Characterisation of Epitaxial Laterally Overgrown Gallium Nitride Using Transmission Electron Microscopy

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 633–637, D.M. Tricker, K. Jacobs and C.J. Humphreys

    Article first published online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<633::AID-PSSB633>3.0.CO;2-O

  20. An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 541–544, Danny Sutherland, Fabrice Oehler, Tongtong Zhu, James T. Griffiths, Thomas J. Badcock, Philip Dawson, Robert M. Emery, Menno J. Kappers, Colin J. Humphreys and Rachel A. Oliver

    Article first published online : 17 FEB 2014, DOI: 10.1002/pssc.201300532