Insulated Gate Bipolar Transistor IGBT Theory and Design

Copyright © 2003 Institute of Electrical and Electronics Engineers

Insulated Gate Bipolar Transistor IGBT Theory and Design

Author(s): Vinod Kumar Khanna

Published Online: 28 JAN 2005

Print ISBN: 9780471238454

Online ISBN: 9780471722915

DOI: 10.1002/047172291X

About this Book

Product Information

About The Product

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.

  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Table of contents

    1. You have free access to this content
      Frontmatter (pages i–xix)

    2. Chapter 1

      Power Device Evolution and the Advent of IGBT (pages 1–33)

    3. Chapter 2

      IGBT Fundamentals and Status Review (pages 35–100)

    4. Chapter 3

      MOS Components of IGBT (pages 101–153)

    5. Chapter 4

      Bipolar Components of IGBT (pages 155–228)

    6. Chapter 5

      Physics and Modeling of IGBT (pages 229–302)

    7. Chapter 6

      Latchup of Parasitic Thyristor in IGBT (pages 303–348)

    8. Chapter 7

      Design Considerations of IGBT Unit Cell (pages 349–410)

    9. Chapter 8

      IGBT Process Design and Fabrication Technology (pages 411–463)

    10. Chapter 9

      Power IGBT Modules (pages 465–498)

    11. Chapter 10

      Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies (pages 499–544)

    12. Chapter 11

      IGBT Circuit Applications (pages 545–608)

    13. You have free access to this content
      Index (pages 609–626)

    14. You have free access to this content
      About the Author (page 627)

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