Nitride Semiconductors: Handbook on Materials and Devices

Nitride Semiconductors: Handbook on Materials and Devices

Editor(s): Pierre Ruterana, Martin Albrecht, Jörg Neugebauer

Published Online: 7 JUN 2006

Print ISBN: 9783527403875

Online ISBN: 9783527607648

DOI: 10.1002/3527607641

About this Book

Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components.
This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Table of contents

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  1. Part 1: Material

    1. Chapter 1

      High-Pressure Crystallization of GaN (pages 1–43)

      Izabella Grzegory, Stanisław Krukowski, Michaeł Leszczyński, Piotr Perlin, Tadeusz Suski and Sylwester Porowski

    2. Chapter 2

      Epitaxial Lateral Overgrowth of GaN (pages 45–106)

      Pierre Gibart, Bernard Beaumont and Philippe Vennéguès

    3. Chapter 5

      Growth and Properties of InN (pages 241–294)

      Valery Davydov, Albert Klochikhin, Sergey Ivanov, Jochen Aderhold and Akio Yamamoto

  2. Part 2: Defects and Interfaces

    1. Chapter 7

      Topological Analysis of Defects in Nitride Semiconductors (pages 319–377)

      Georgios P. Dimitrakopulos, Philomela Komninou, Theodoros Karakostas and Robert C. Pond

  3. Part 3: Processing and Devices

    1. Chapter 10

      Ohmic Contacts to GaN (pages 489–527)

      Philip J. Hartlieb, Robert F. Davis and Robert J. Nemanich

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