Reliability Wearout Mechanisms in Advanced CMOS Technologies
Copyright © 2009 the Institute of Electrical and Electronics Engineers, Inc.
Author(s): Alvin W. Strong, Ernest Y. Wu, Rolf-Peter Vollertsen, Jordi Suñé, Giuseppe La Rosa, Stewart E. Rauch, Timothy D. Sullivan
Published Online: 14 OCT 2009
Print ISBN: 9780471731726
Online ISBN: 9780470455265
DOI: 10.1002/9780470455265
Series Editor(s): Stuart K. Tewksbury, Joe E. Brewer
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A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms
This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers:
Introduction to Reliability
Gate Dielectric Reliability
Negative Bias Temperature Instability
Hot Carrier Injection
Electromigration Reliability
Stress Voiding
Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.