Reliability Wearout Mechanisms in Advanced CMOS Technologies

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Author(s): Alvin W. Strong, Ernest Y. Wu, Rolf-Peter Vollertsen, Jordi Suñé, Giuseppe La Rosa, Stewart E. Rauch, Timothy D. Sullivan

Published Online: 14 OCT 2009

Print ISBN: 9780471731726

Online ISBN: 9780470455265

DOI: 10.1002/9780470455265

Series Editor(s): Stuart K. Tewksbury, Joe E. Brewer

About this Book

A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms

This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers:

  • Introduction to Reliability

  • Gate Dielectric Reliability

  • Negative Bias Temperature Instability

  • Hot Carrier Injection

  • Electromigration Reliability

  • Stress Voiding

Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.

Table of contents