Nitride Semiconductor Devices: Principles and Simulation

Nitride Semiconductor Devices: Principles and Simulation

Editor(s): Joachim Piprek

Published Online: 29 MAR 2007

Print ISBN: 9783527406678

Online ISBN: 9783527610723

DOI: 10.1002/9783527610723

About this Book

This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication.
This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.

Table of contents

    1. You have free access to this content
  1. Part 1: Material Properties

    1. Chapter 5

      Optical Constants of Bulk Nitrides (pages 95–115)

      Rüdiger Goldhahn, Carsten Buchheim, Pascal Schley, Andreas Theo Winzer and Hans Wenzel

    2. Chapter 6

      Intersubband Absorption in AlGaN/GaN Quantum Wells (pages 117–143)

      Sulakshana Gunna, Francesco Bertazzi, Roberto Paiella and Enrico Bellotti

    3. Chapter 7

      Interband Transitions in InGaN Quantum Wells (pages 145–167)

      Jörg Hader, Jerome V. Moloney, Angela Thränhardt and Stephan W. Koch

  2. Part 2: Devices

    1. Chapter 13

      Ultraviolet Light-Emitting Diodes (pages 279–301)

      Yen-Kuang Kuo, Sheng-Horng Yen and Jun-Rong Chen

    2. Chapter 19

      Electronic Properties of InGaN/GaN Vertical-Cavity Lasers (pages 423–445)

      Joachim Piprek, Zhan-Ming Li, Robert Farrell, Steven P. DenBaars and Shuji Nakamura

    3. Chapter 20

      Optical Design of Vertical-Cavity Lasers (pages 447–466)

      Włodzimierz Nakwaski, Tomasz Czyszanowski and Robert P. Sarzała

    1. You have free access to this content
    1. You have free access to this content