Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Editor(s): Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl

Print ISBN: 9783527409532

Online ISBN: 9783527629053

DOI: 10.1002/9783527629053

Reviews


"At this stage, the two volumes provide an up-to-date, comprehensive, and critical assessment of all aspects of SiC semiconductor technology with an emphasis on power electronics . . . The contributions are written by internationally renowned experts from industry as well as academia who are actively involved in SiC R&D. Hence, the two volumes provide and evaluate source of information for everybody working with SiC or generally interested in the current and future state of power electronics". (Int. Journal of Microstructure and Materials Properties, 2011)

 

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