Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Editor(s): Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl

Published Online: 28 MAR 2011 08:56AM EST

Print ISBN: 9783527409532

Online ISBN: 9783527629053

DOI: 10.1002/9783527629053

About this Book

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon.
The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches.
Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.
The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Table of contents

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  1. Part A: Growth of SiC

    1. Chapter 1

      Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution (pages 1–31)

      Sakwe Aloysius Sakwe, Mathias Stockmeier, Philip Hens, Ralf Müller, Desirée Queren, Ulrike Kunecke, Katja Konias, Rainer Hock, Andreas Magerl, Michel Pons, Albrecht Winnacker and Peter Wellmann

  2. Part B: Characterization of Defects and Material Properties

    1. Chapter 6

      EPR Identification of Intrinsic Defects in SiC (pages 147–179)

      J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzén and T. Ohshima

    2. Chapter 12

      Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization (pages 319–340)

      Christophe Raynaud, Duy-Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, Mihai Lazar and Dominique Planson

    3. Chapter 14

      Analysis of Interface Trap Parameters from Double-Peak Conductance Spectra Taken on N-Implanted 3C-SiC MOS Capacitors (pages 363–374)

      M. Krieger, S. Beljakowa, L. Trapaidze, T. Frank, H. B. Weber, Dr. G. Pensl, N. Hatta, M. Abe, H. Nagasawa and A. Schöner

  3. Part C: Novel Applications

    1. Chapter 18

      Epitaxial Graphene: A New Material (pages 453–472)

      Th. Seyller, A. Bostwick, K. V. Emtsev, K. Horn, Prof. Dr. L. Ley, J. L. McChesney, T. Ohta, J. D. Riley, E. Rotenberg and F. Speck

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