Silicon Carbide: Power Devices and Sensors, Volume 2

Silicon Carbide: Power Devices and Sensors, Volume 2

Editor(s): Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl

Published Online: 28 MAR 2011 08:50AM EST

Print ISBN: 9783527409976

Online ISBN: 9783527629077

DOI: 10.1002/9783527629077

About this Book

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.
This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters.
The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Table of contents

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  1. Part A: View from Industry

  2. Part B:I: Unipolar Devices Schottky Diodes

    1. Chapter 3

      Effect of an Intermediate Graphite Layer on the Electronic Properties of Metal/SiC Contacts (pages 35–50)

      Sergey A. Reshanov, Konstantin V. Emtsev, Florian Speck, Kun-Yuan Gao, Thomas K. Seyller, Dr. Gerhard Pensl and Prof. Dr. Lothar Ley

  3. Part B:II: JFET

    1. Chapter 5

      Design, Process, and Performance of All-Epitaxial Normally-Off SiC JFETs (pages 77–119)

      Rajesh K. Malhan, Mietek Bakowski, Yuuichi Takeuchi, Naohiro Sugiyama and Adolf Schöner

    2. Chapter 6

      Extreme Temperature 6H-SiC JFET Integrated Circuit Technology (pages 121–155)

      Philip G. Neudeck, Steven L. Garverick, David J. Spry, Liang-Yu Chen, Glenn M. Beheim, Michael J. Krasowski and Mehran Mehregany

  4. Part B:III: MOS Interfaces

    1. Chapter 8

      Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors (pages 193–214)

      Dr. Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Prof. Dr. Lothar Ley, Florin Ciobanu, Valery Afanas'ev, Andre Stesmans, Prof. Dr. Tsunenobu Kimoto and Adolf Schöner

    2. Chapter 9

      High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen (pages 215–233)

      B. Zippelius, S. Beljakowa, M. Krieger, Dr. G. Pensl, S. A. Reshanov, M. Noborio, Prof. Dr. T. Kimoto and V. V. Afanas'ev

    3. Chapter 10

      4H-SiC MISFETs with Nitrogen-Containing Insulators (pages 235–265)

      Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger and Prof. Dr. Tsunenobu Kimoto

  5. Part C: MOSFET and JFET Power Devices

    1. Chapter 12

      Development of SiC Diodes, Power MOSFETs and Intelligent Power Modules (pages 291–319)

      Takashi Nakamura, Mineo Miura, Noriaki Kawamoto, Yuki Nakano, Takukazu Otsuka, Keiji Oku-Mura and Akira Kamisawa

  6. Part D: Bipolar Devices

    1. Chapter 16

      Suppressed Surface-Recombination Structure and Surface Passivation for Improving Current Gain of 4H-SiC BJTs (pages 445–465)

      Kenichi Nonaka, Akihiko Horiuchi, Yuki Negoro, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Masashi Sato, Yusuke Maeyama, Masaaki Shimizu and Hiroaki Iwakuro

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