High-k Gate Dielectrics for CMOS Technology

Copyright © 2012 Wiley-VCH Verlag GmbH & Co. KGaA

High-k Gate Dielectrics for CMOS Technology

Editor(s): Gang He, Zhaoqi Sun

Published Online: 23 AUG 2012 06:24AM EST

Print ISBN: 9783527330324

Online ISBN: 9783527646340

DOI: 10.1002/9783527646340

About this Book

Product Information

About The Product

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions.
As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology.
Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Table of contents

    1. You have free access to this content
      Front Matter (pages I–XXXI)

  2. Part One: Scaling and Challenge of Si-Based CMOS

    1. Chapter 1

      Scaling and Limitation of Si-Based CMOS (pages 1–29)

      Prof. Gang He, Prof. Zhaoqi Sun, Mao Liu and Lide Zhang

  3. Part Two: High-k Deposition and Materials Characterization

    1. Chapter 2

      Issues in High-k Gate Dielectrics and its Stack Interfaces (pages 31–59)

      Hong-Liang Lu and David Wei Zhang

    2. Chapter 3

      UV Engineering of High-k Thin Films (pages 61–76)

      Ian W. Boyd

    3. Chapter 4

      Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate (pages 77–110)

      Tae Joo Park, Moonju Cho, Hyung-Suk Jung and Cheol Seong Hwang

    4. Chapter 5

      Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications (pages 111–184)

      Fu-Chien Chiu, Somnath Mondal and Tung-Ming Pan

    5. Chapter 6

      Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3) for High-k Gate Insulators (pages 185–223)

      Yi Zhao

    6. Chapter 7

      Characterization of High-k Dielectric Internal Structure by X-Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis (pages 225–271)

      Elena O. Filatova, Andrey A. Sokolov and Igor V. Kozhevnikov

    7. Chapter 8

      High-k Insulating Films on Semiconductors and Metals: General Trends in Electron Band Alignment (pages 273–292)

      Valeri V. Afanas'ev, Michel Houssa and Andre Stesmans

  4. Part Three: Challenge in Interface Engineering and Electrode

    1. Chapter 9

      Interface Engineering in the High-k Dielectric Gate Stacks (pages 293–318)

      Shijie Wang, Yuanping Feng and Alfred C. H. Huan

    2. Chapter 10

      Interfacial Dipole Effects on High-k Gate Stacks (pages 319–353)

      Li Qiang Zhu

    3. Chapter 11

      Metal Gate Electrode for Advanced CMOS Application (pages 355–378)

      Wenwu Wang, Xiaolei Wang and Kai Han

  5. Part Four: Development in Non-Si-Based CMOS Technology

    1. Chapter 12

      Metal Gate/High-k CMOS Evolution from Si to Ge Platform (pages 379–405)

      Albert Achin

    2. Chapter 13

      Theoretical Progress on GaAs (001) Surface and GaAs/High-k Interface (pages 407–431)

      Weichao Wang, Ka Xiong, Robert M. Wallace and Kyeongjae Cho

    3. Chapter 14

      III–V MOSFETs with ALD High-k Gate Dielectrics (pages 433–470)

      Jack C. Lee and Han Zhao

  6. Part Five: High-k Application in Novel Devices

    1. Chapter 15

      High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications (pages 471–499)

      Xubing Lu

    2. Chapter 16

      Rare-Earth Oxides as High-k Gate Dielectrics for Advanced Device Architectures (pages 501–530)

      Pooi See Lee, Mei Yin Chan and Peter Damarwan

  7. Part Six: Challenge and Future Directions

    1. Chapter 17

      The Interaction Challenges with Novel Materials in Developing High-Performance and Low-Leakage High-k/Metal Gate CMOS Transistors (pages 531–555)

      Michael Chudzik, Siddarth Krishnan, Unoh Kwon, Mukesh Khare, Vijay Narayanan, Takashi Ando, Ed Cartier, Huiming Bu and Vamsi Paruchuri

    1. You have free access to this content
      Index (pages 557–558)

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