High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

Editor(s): Gang He, Zhaoqi Sun

Published Online: 23 AUG 2012 06:24AM EST

Print ISBN: 9783527330324

Online ISBN: 9783527646340

DOI: 10.1002/9783527646340

About this Book

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological
viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these
materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies.

Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections
with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Table of contents

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  1. Part One: Scaling and Challenge of Si-Based CMOS

  2. Part Two: High-k Deposition and Materials Characterization

  3. Part Three: Challenge in Interface Engineering and Electrode

  4. Part Four: Development in Non-Si-Based CMOS Technology

  5. Part Five: High-k Application in Novel Devices

  6. Part Six: Challenge and Future Directions

    1. Chapter 17

      The Interaction Challenges with Novel Materials in Developing High-Performance and Low-Leakage High-k/Metal Gate CMOS Transistors (pages 531–555)

      Michael Chudzik, Siddarth Krishnan, Unoh Kwon, Mukesh Khare, Vijay Narayanan, Takashi Ando, Ed Cartier, Huiming Bu and Vamsi Paruchuri

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