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Original Paper
Electronic and Positronic Distribution in the Ternary Alloy Hg1–xCdxTe
Article first published online: 4 MAY 1999
DOI: 10.1002/(SICI)1521-3951(199905)213:1<59::AID-PSSB59>3.0.CO;2-D
© 1999 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany
1521-3951/asset/cover.gif?v=1&s=d9a8d30bfa9cdf3814e5333423d066799135fac6 "physica status solidi (b)")
Additional Information
How to Cite
Meçabih, S., Amrane, N. and Aourag, H. (1999), Electronic and Positronic Distribution in the Ternary Alloy Hg1–xCdxTe. Phys. Status Solidi B, 213: 59–69. doi: 10.1002/(SICI)1521-3951(199905)213:1<59::AID-PSSB59>3.0.CO;2-D
Publication History
- Issue published online: 4 MAY 1999
- Article first published online: 4 MAY 1999
- Manuscript Revised: 30 NOV 1998
- Manuscript Received: 12 AUG 1998
- Abstract
- References
- Cited By
Abstract
The electron and positron charge densities are calculated as a function of position in the unit cell for the Hg1–xCdxTe alloy system using the empirical pseudopotential method combined with the virtual-crystal approximation. The results show that the positron has a strong affinity to one sort of atoms in binary semiconductors. The results of the positron charge density should provide valuable insight into the effect of annihilation. The electron charge density and the ionicity character with respect to the variation of the mole fraction are discussed.