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physica status solidi (b)

Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Cover image for physica status solidi (b)

November 1999

Volume 216, Issue 1

Pages 5–811

    1. High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers (pages 5–9)

      K. Kornitzer, T. Ebner, M. Grehl, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory and S. Porowski

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<5::AID-PSSB5>3.0.CO;2-F

    2. Polarised Magnetoluminescence of Excitons in Homoepitaxial GaN Layers (pages 11–15)

      A. Wysmołek, M. Potemski, R. Stepniewski, J. Lusakowski, K. Pakuła, J.M. Baranowski, G. Martinez, P. Wyder, I. Grzegory and S. Porowski

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<11::AID-PSSB11>3.0.CO;2-U

    3. Magneto-Reflectivity of Gallium Nitride Epilayers (pages 17–20)

      P.A. Shields, R.J. Nicholas, B. Beaumont and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<17::AID-PSSB17>3.0.CO;2-V

    4. Exciton Energy Structure in Wurtzite GaN (pages 21–26)

      A.V. Rodina, M. Dietrich, A. Göldner, L. Eckey, Al.L. Efros, M. Rosen, A. Hoffmann and B.K. Meyer

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<21::AID-PSSB21>3.0.CO;2-S

    5. Magneto-Luminescence Spectroscopy of Excitonic Transitions in Homoepitaxial GaN Layers (pages 27–30)

      Y. Yamada, C. Sasaki, Y. Yoshida, S. Kurai, T. Taguchi, T. Sugahara, K. Nishino and S. Sakai

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<27::AID-PSSB27>3.0.CO;2-T

    6. Inhomogeneous Broadening of Excitons in Thin Films of GaN: Effect on the Time-Resolved Transmission Spectra (pages 31–34)

      A.V. Kavokin, G. Malpuech and G. Panzarini

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<31::AID-PSSB31>3.0.CO;2-Q

    7. Hot Electron Dynamics in Zincblende and Wurtzite GaN (pages 35–39)

      C.G. Rodrigues, V.N. Freire, J.A.P. da Costa, A.R. Vasconcellos and R. Luzzi

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<35::AID-PSSB35>3.0.CO;2-2

    8. Temporary Dynamics of Exciton-Polaritons in GaN Films (pages 41–44)

      G. Malpuech and A.V. Kavokin

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<41::AID-PSSB41>3.0.CO;2-O

    9. Dynamics of the Bound Excitons in GaN Epilayers Grown by Hydride Vapor Phase Epitaxy (pages 45–49)

      G. Pozina, J.P. Bergman, T. Paskova and B. Monemar

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<45::AID-PSSB45>3.0.CO;2-0

    10. Hot Carrier Relaxation by Extreme Electron–LO Phonon Scattering in GaN (pages 51–55)

      S. Hess, R.A. Taylor, E.D. O'Sullivan, J.F. Ryan, N.J. Cain, V. Roberts and J.S. Roberts

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<51::AID-PSSB51>3.0.CO;2-M

    11. Femtosecond Exciton Dynamics and the Mott Transition in GaN under Resonant Excitation (pages 57–62)

      S. Hess, R.A. Taylor, K. Kyhm, J.F. Ryan, B. Beaumont and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<57::AID-PSSB57>3.0.CO;2-N

    12. Impact Ionization of Excitons in an Electric Field in GaN (pages 63–67)

      D.K. Nelson, M.A. Jacobson, V.D. Kagan, M. Shmidt, B. Gil, N. Grandjean and J. Massies

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8

    13. Influence of the Electric Field on the Excitonic Spectra of Epitaxial GaN Films (pages 69–72)

      M.A. Jacobson, E.V. Kalinina, D.K. Nelson, S.O. Romanovsky and A.V. Sel'kin

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<69::AID-PSSB69>3.0.CO;2-9

    14. Temperature Dependence of Hexagonal-GaN Optical Properties below the Bandgap (pages 73–77)

      L. Siozade, S. Colard, M. Mihailovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux and J. Massies

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<73::AID-PSSB73>3.0.CO;2-6

    15. Near-Band Gap Selective Photoluminescence in Wurtzite GaN (pages 79–83)

      G. Neu, M. Teisseire, B. Beaumont, H. Lahreche and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<79::AID-PSSB79>3.0.CO;2-7

    16. Excitonic Thermalization and Recombination in Homoepitaxial Gallium Nitride (pages 85–89)

      K.P. Korona, J. Kuhl, J.M. Baranowski and S. Porowski

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<85::AID-PSSB85>3.0.CO;2-T

    17. Infrared Reflectivity and Transport Investigations of GaN Single Crystals and Homoepitaxial Layers (pages 91–94)

      E. Frayssinet, W. Knap, J.L. Robert, P. Prystawko, M. Leszczynski, T. Suski, P. Wisniewski, E. Litwin-Staszewska, S. Porowski, B. Beaumont and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<91::AID-PSSB91>3.0.CO;2-E

    18. Emission Due to Exciton Scattering by LO-Phonons in Gallium Nitride (pages 95–99)

      M. Wojdak, A. Wysmołek, K. Pakuła and J.M. Baranowski

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<95::AID-PSSB95>3.0.CO;2-R

    19. GaN on Si(111): From Growth Optimization to Optical Properties of Quantum Well Structures (pages 101–105)

      F. Semond, B. Damilano, S. Vézian, N. Grandjean, M. Leroux and J. Massies

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<101::AID-PSSB101>3.0.CO;2-R

    20. Extended Tight-Binding and Thermochemical Modeling of III-Nitride Heterostructures at Any Temperature and Pressure (pages 107–111)

      H. Ünlü

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<107::AID-PSSB107>3.0.CO;2-3

    21. Strong Photoluminescence Emission from GaN on SrTiO3 (pages 113–116)

      H. Tampo, H. Asahi, M. Hiroki, K. Asami and S. Gonda

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<113::AID-PSSB113>3.0.CO;2-F

    22. Anomalous Behavior of the Nitride Alloys (pages 117–123)

      Alex Zunger

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<117::AID-PSSB117>3.0.CO;2-#

    23. Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy (pages 125–129)

      I.A. Buyanova, W.M. Chen, G. Pozina, B. Monemar, H.P. Xin and C.W. Tu

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<125::AID-PSSB125>3.0.CO;2-3

    24. k · P Model of Ordered GaNxAs1—x (pages 131–134)

      E.P. O'Reilly and A. Lindsay

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<131::AID-PSSB131>3.0.CO;2-F

    25. Effect of Nitrogen-Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys (pages 135–139)

      C. Skierbiszewski, P. Perlin, P. Wisniewski, T. Suski, W. Walukiewicz, W. Shan, J.W. Ager, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson and S.R. Kurtz

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<135::AID-PSSB135>3.0.CO;2-#

    26. Intrinsic Infrared Luminescence from InGaN Epilayers (pages 141–144)

      K.P. O'Donnell, R.W. Martin, S. Pereira, A. Bangura, M.E. White, W. van der Stricht and K. Jacobs

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<141::AID-PSSB141>3.0.CO;2-B

    27. Study of Phase-Separated InGaN Grown by Metalorganic Vapor Phase Epitaxy (pages 145–149)

      P. Li, S.J. Chua, G. Li, W. Wang, X.C. Wang and Y.P. Guo

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<145::AID-PSSB145>3.0.CO;2-W

    28. Extended X-Ray Absorption Fine Structure (EXAFS) of InN and InGaN (pages 151–156)

      K.P. O'Donnell, R.W. Martin, M.E. White, J.F.W. Mosselmans and Qixin Guo

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<151::AID-PSSB151>3.0.CO;2-7

    29. Spectroscopic Imaging of InGaN Epilayers (pages 157–161)

      K.P. O'Donnell, C. Trager Cowan, S. Pereira, A. Bangura, C. Young, M.E. White and M.J. Tobin

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<157::AID-PSSB157>3.0.CO;2-K

    30. Efficient UV Emission Encompassing Two Recombination Centres in InxGa1—xN Epilayers (pages 163–166)

      H. Kudo, H. Ishibashi, R. Zheng, Y. Yamada and T. Taguchi

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<163::AID-PSSB163>3.0.CO;2-W

    31. Optical and Structural Studies of Phase Separation in InGaN Film Grown by MOCVD (pages 167–170)

      Yong-Tae Moon, Dong-Joon Kim, Keun-Man Song, In-Hwan Lee, Min-Su Yi, Do-Young Noh, Chel-Jong Choi, Tae-Yeon Seong and Seong-Ju Park

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<167::AID-PSSB167>3.0.CO;2-G

    32. Photoluminescence Mapping and Rutherford Backscattering Spectrometry of InGaN Epilayers (pages 171–174)

      K.P. O'Donnell, M.E. White, S. Pereira, M.F. Wu, A. Vantomme, W. Van Der Stricht and K. Jacobs

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<171::AID-PSSB171>3.0.CO;2-#

    33. Influence of UV Light-Assisted Annealing on Optical Properties of InGaN/GaN Heterostructures Grown by MOVPE (pages 175–179)

      I.P. Marko, E.V. Lutsenko, V.N. Pavlovskii, G.P. Yablonskii, O. Schön, H. Protzmann, M. Lünenbürger, M. Heuken, B. Schineller and K. Heime

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<175::AID-PSSB175>3.0.CO;2-K

    34. Effects of Carrier Localization on the Optical Characteristics of MOCVD-Grown InGaN/GaN Heterostructures (pages 181–185)

      Yong-Hoon Cho, T.J. Schmidt, A.J. Fischer, S. Bidnyk, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars, D.S. Kim and W. Jhe

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<181::AID-PSSB181>3.0.CO;2-W

    35. Photoluminescence Investigations of AlGaN on GaN Epitaxial Films (pages 187–191)

      B.K. Meyer, G. Steude, A. Göldner, A. Hoffmann, H. Amano and I. Akasaki

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<187::AID-PSSB187>3.0.CO;2-8

    36. Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition (pages 193–197)

      C.J. Eiting, D.J.H. Lambert, H.K. Kwon, B.S. Shelton, M.M. Wong, T.G. Zhu and R.D. Dupuis

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<193::AID-PSSB193>3.0.CO;2-K

    37. Optical Constants of AlxGa1—xN: Modeling over a Wide Spectral Range (pages 199–203)

      A.B. Djurišić and E.H. Li

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<199::AID-PSSB199>3.0.CO;2-X

    38. Optical Properties of an AlInN Interface Layer Spontaneously Formed in Hexagonal InN/Sapphire Heterostructures (pages 205–209)

      T.V. Shubina, V.V. Mamutin, V.A. Vekshin, V.V. Ratnikov, A.A. Toropov, A.A. Sitnikova, S.V. Ivanov, M. Karlsteen, U. Södervall, M. Willander, G. Pozina, J.P. Bergman and B. Monemar

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<205::AID-PSSB205>3.0.CO;2-7

    39. Optical Characterization of Cubic AlGaN Epilayers by Cathodoluminescence and Spectroscopic Ellipsometry (pages 211–214)

      H. Okumura, T. Koizumi, Y. Ishida, H. Yaguchi and S. Yoshida

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<211::AID-PSSB211>3.0.CO;2-J

    40. Reflectance Difference Spectroscopy Characterization of AlxGa1—xN-Compound Layers (pages 215–220)

      U. Rossow, D.E. Aspnes, O. Ambacher, V. Cimalla, N.V. Edwards, M. Bremser, R.F. Davis, J.A. Schaefer and M. Stutzmann

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<215::AID-PSSB215>3.0.CO;2-3

    41. Photoreflectance Spectroscopy Investigation of GaN–AlGaN Quantum Well Structures (pages 221–225)

      T.J. Ochalski, B. Gil, T. Bretagnon, P. Lefebvre, N. Grandjean, J. Massies and M. Leroux

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<221::AID-PSSB221>3.0.CO;2-F

    42. A Comparison of the Optical Characteristics of AlGaN, GaN, and InGaN Thin Films (pages 227–231)

      Yong-Hoon Cho, T.J. Schmidt, G.H. Gainer, J.B. Lam, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars, W. Yang, D.S. Kim and W. Jhe

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<227::AID-PSSB227>3.0.CO;2-S

    43. Photoluminescence Excitation Spectrum Study on GaN/Al0.15Ga0.85N MQWs (pages 233–236)

      T. Nishida, M. Kumagai, H. Ando and N. Kobayashi

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<233::AID-PSSB233>3.0.CO;2-3

    44. Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy (pages 237–240)

      H. Yaguchi, J. Wu, H. Akiyama, M. Baba, K. Onabe and Y. Shiraki

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<237::AID-PSSB237>3.0.CO;2-O

    45. Origin of the Tilt of Crystalline Axis Influenced by the N-Beam Incidence Direction in rf-MBE of Cubic GaN Epilayer on (001) GaAs (pages 241–245)

      H. Hayashi, A. Hayashida, A.W. Jia, M. Kobayashi, M. shimotomai, Y. Kato, A. Yoshikawa and K. Takahashi

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<241::AID-PSSB241>3.0.CO;2-7

    46. Optical Study of Cubic Gallium Nitride Band-Edge and Relation with Residual Strain (pages 247–252)

      A. Philippe, C. Bru-Chevallier, H. Gamez-Cuatzin, G. Guillot, E. Martinez-Guerrero, G. Feuillet, B. Daudin, P. Aboughé-Nzé and Y. Monteil

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<247::AID-PSSB247>3.0.CO;2-K

    47. Experimental Investigation of Cubic to Hexagonal Ratio for GaN Layers Deposited on 3C-SiC/Si (pages 253–257)

      J. Camassel, P. Vicente, N. Planes, J. Allègre, J. Pankove and F. Namavar

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<253::AID-PSSB253>3.0.CO;2-W

    48. Photoluminescence and Gain of MBE Grown Cubic InxGa1—xN/GaN Heterostructures (pages 259–263)

      T. Frey, D.J. As, D. Schikora, K. Lischka, J. Holst and A. Hoffmann

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<259::AID-PSSB259>3.0.CO;2-8

    49. Determination of Optical Constants for Cubic InxGa1—xN Layers (pages 265–268)

      R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D.J. As and K. Lischka

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<265::AID-PSSB265>3.0.CO;2-K

    50. Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells (pages 269–272)

      S. Keller, S.B. Fleischer, S.F. Chichibu, J.E. Bowers, U.K. Mishra and S.P. DenBaars

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4

    51. Investigation of InGaN/GaN Quantum Wells Grown on Sapphire and Bulk GaN Substrates (pages 273–277)

      T. Sugahara, S. Sakai, M. Lachab, R.S.Q. Fareed, S. Tottori and T. Wang

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<273::AID-PSSB273>3.0.CO;2-O

    52. Investigation of the Optical Properties in InGaN/GaN Quantum Well Structure (pages 279–285)

      T. Wang, D. Nakagawa, M. Lachab, T. Sugahara and S. Saki

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<279::AID-PSSB279>3.0.CO;2-0

    53. Comparison of Optical Properties between GaN and InGaN Quantum Wells (pages 287–290)

      P. Riblet, H. Hirayama, A. Kinoshita, A. Hirata, T. Sugano and Y. Aoyagi

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<287::AID-PSSB287>3.0.CO;2-4

    54. Optical Spectroscopy of InGaN/GaN Quantum Wells (pages 291–300)

      E. Berkowicz, D. Gershoni, G. Bahir, A.C. Abare, S.P. DenBaars and L.A. Coldren

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<291::AID-PSSB291>3.0.CO;2-O

    55. Band Fillling and Energy Relaxation in InGaN/GaN-Multiple Quantum Well Structures (pages 301–305)

      T. Riemann, D. Rudloff, J. Christen, A. Krost, M. Lünenbürger, H. Protzmann and M. Heuken

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<301::AID-PSSB301>3.0.CO;2-J

    56. Enhanced Blue-Light Emission from InGaN/GaN Quantum Wells Grown over Multilayered Buffer on Silicon Substrate by Metal Organic Chemical Vapor Deposition (pages 307–310)

      Xiong Zhang, Soo-Jin Chua, Wei Liu and Peng Li

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<307::AID-PSSB307>3.0.CO;2-W

    57. Characterization of InGaN Single Layers and Quantum Wells Grown by LP-MOVPE (pages 311–314)

      B. Schineller, P.H. Lim, O. Schön, H. Protzmann, M. Heuken and K. Heime

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<311::AID-PSSB311>3.0.CO;2-F

    58. Structural and Optical Analysis of (In, Ga)N Structures Grown by MOCVD (pages 315–320)

      D. Rudloff, J. Bläsing, T. Riemann, J. Christen, A. Krost, M. Lünenbürger, H. Protzmann and M. Heuken

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<315::AID-PSSB315>3.0.CO;2-#

    59. Effect of an Electric Field on the Electroluminescence and the Photocurrent in InGaN Single Quantum Well Light Emitting Diodes (pages 321–324)

      P. de Mierry, S. Dalmasso, B. Beaumont and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<321::AID-PSSB321>3.0.CO;2-B

    60. Photoluminescence Dynamics of InGaN/GaN Quantum Wells with Different In Concentrations (pages 325–329)

      M. Klose, K.P. Korona, J. Kuhl and M. Heuken

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<325::AID-PSSB325>3.0.CO;2-W

    61. Influence of Barrier Doping and Barrier Composition on Optical Gain in (In, Ga)N MQWs (pages 331–334)

      M. Vehse, P. Michler, J. Gutowski, S. Figge, S. Hommel, H. Selke, P.L. Ryder, S. Keller and S.P. DenBaars

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<331::AID-PSSB331>3.0.CO;2-7

    62. Spectral Study of Photoluminescence from GaInN/GaN MQWs Using CW and Time-Resolved Measurements (pages 335–339)

      S. Watanabe, N. Yamada, Y. Yamada, T. Taguchi, T. Takeuchi, H. Amano and I. Akasaki

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<335::AID-PSSB335>3.0.CO;2-S

    63. Slow Spin Relaxation Observed in InGaN/GaN Multiple Quantum Wells (pages 341–345)

      M. Julier, A. Vinattieri, M. Colocci, P. Lefebvre, B. Gil, D. Scalbert, C.A. Tran, R.F. Karlicek Jr. and J.-P. Lascaray

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<341::AID-PSSB341>3.0.CO;2-3

    64. Cathodoluminescence from an InGaN/GaN MQW Grown on an Epitaxially Laterally Overgrown GaN Epilayer (pages 347–350)

      C. Trager-Cowan, I. Osborne, M. Barisonzi, S.K. Manson-Smith, K.P. O'Donnell, K. Jacobs, I. Moerman and P. Demeester

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<347::AID-PSSB347>3.0.CO;2-G

    65. Determination of Band Structure Parameters in Nitride Alloys for Use in Quantum Well Calculations (pages 351–354)

      D.J. Dugdale, S. Brand, R.A. Abram and S.K. Pugh

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<351::AID-PSSB351>3.0.CO;2-#

    66. Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD (pages 355–359)

      N. Duxbury, P. Dawson, U. Bangert, E.J. Thrush, W. van der Stricht, K. Jacobs and I. Moerman

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<355::AID-PSSB355>3.0.CO;2-K

    67. Dynamics of Excitons in GaN–AlGaN MQWs with Varying Depths, Thicknesses and Barrier Widths (pages 361–364)

      P. Lefebvre, M. Gallart, T. Taliercio, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies and P. Bigenwald

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<361::AID-PSSB361>3.0.CO;2-W

    68. CW and Time-Resolved Optical Spectroscopy of GaN Epilayers and GaN–AlGaN Quantum Wells Grown on A-Plane Sapphire (pages 365–369)

      M. Gallart, T. Taliercio, A. Alemu, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu and S. Nakamura

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<365::AID-PSSB365>3.0.CO;2-G

    69. Confined Excitons in GaN–AlGaN Quantum Wells (pages 371–374)

      P. Bigenwald, P. Lefebvre, T. Bretagnon and B. GilBigenwald

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO;2-S

    70. Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells (pages 375–379)

      C.E. Norman, R.A. Hoog, A.J. Shields and N. Iizuka

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<375::AID-PSSB375>3.0.CO;2-C

    71. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices (pages 381–389)

      O. Ambacher, R. Dimitrov, M. Stutzmann, B.E. Foutz, M.J. Murphy, J.A. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Chumbes, B. Green, A.J. Sierakowski, W.J. Schaff and L.F. Eastman

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<381::AID-PSSB381>3.0.CO;2-O

    72. Spontaneous versus Piezoelectric Polarization in III–V Nitrides: Conceptual Aspects and Practical Consequences (pages 391–398)

      F. Bernardini and V. Fiorentini

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO;2-K

    73. Discrete Stark-Like Ladder in Piezoelectric GaInN/GaN Quantum Wells (pages 399–403)

      C. Wetzel, M. Kasumi, T. Detchprohm, T. Takeuchi, H. Amano and I. Akasaki

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<399::AID-PSSB399>3.0.CO;2-P

    74. Direct Observation of Pyroelectric Fields in InGaN/GaN and AlGaN/GaN Heterostructures (pages 405–408)

      O. Gfrörer, C. Gemmer, J. Off, J.S. Im, F. Scholz and A. Hangleiter

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<405::AID-PSSB405>3.0.CO;2-#

    75. Carrier Recombination at Screw Dislocations in n-Type AlGaN Layers (pages 409–414)

      M. Albrecht, A. Cremades, J. Krinke, S. Christiansen, O. Ambacher, J. Piqueras, H.P. Strunk and M. Stutzmann

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.0.CO;2-K

    76. Polarization Induced Charge at Heterojunctions of the III–V Nitrides and Their Alloys (pages 415–418)

      B.E. Foutz, O. Ambacher, M.J. Murphy, V. Tilak and L.F. Eastman

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<415::AID-PSSB415>3.0.CO;2-W

    77. Influence of Internal Polarization Fields on the Disorder Broadening of Excitons in (In, Ga)N/GaN Quantum Wells (pages 419–422)

      O. Mayrock, H.-J. Wünsche, F. Henneberger and O. Brandt

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<419::AID-PSSB419>3.0.CO;2-G

    78. Screening of the Polarization Field in InGaN Single Quantum Wells (pages 423–426)

      J.C. Harris, S. Kako, T. Someya and Y. Arakawa

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<423::AID-PSSB423>3.0.CO;2-#

    79. Optical Properties of Nitride Quantum Wells: How to Separate Fluctuations and Polarization Field Effects (pages 427–430)

      A. Hangleiter, J.S. Im, J. Off and F. Scholz

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<427::AID-PSSB427>3.0.CO;2-K

    80. GaN Quantum Structures with Fractional Dimension — From Quantum Well to Quantum Dot (pages 431–434)

      S. Tanaka, I. Suemune, P. Ramvall and Y. Aoyagi

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<431::AID-PSSB431>3.0.CO;2-3

    81. Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix (pages 435–440)

      A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsulnikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, J. Holst, A. Hoffmann, D. Bimberg, I.P. Soshnikov and D. Gerthsen

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<435::AID-PSSB435>3.0.CO;2-O

    82. Calculation of Optical Transition Energies for Self-Formed InGaN Quantum Dots (pages 441–444)

      R.W. Martin and K.P. O'Donnell

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<441::AID-PSSB441>3.0.CO;2-#

    83. Optical and Structural Characterization of Ga(In)N Three-Dimensional Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy (pages 445–450)

      G. Pozina, J.P. Bergman, B. Monemar, V.V. Mamutin, T.V. Shubina, V.A. Vekshin, A.A. Toropov, S.V. Ivanov, M. Karlsteen and M. Willander

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<445::AID-PSSB445>3.0.CO;2-K

    84. Violet to Orange Room Temperature Luminescence from GaN Quantum Dots on Si(111) Substrates (pages 451–455)

      B. Damilano, N. Grandjean, F. Semond, J. Massies and M. Leroux

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<451::AID-PSSB451>3.0.CO;2-W

    85. Raman Scattering in GaN/AlN Quantum Dot Structures (pages 457–460)

      J. Gleize, F. Demangeot, F. Frandon, M.A. Renucci, M. Kuball, F. Widmann and B. Daudin

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<457::AID-PSSB457>3.0.CO;2-8

    86. Observation of Quantum-Dot-Like Properties in the Phase-Separated GaN-Rich GaNP (pages 461–464)

      R. Kuroiwa, H. Asahi, K. Iwata, H. Tampo, K. Asami and S. Gonda

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<461::AID-PSSB461>3.0.CO;2-S

    87. Stimulated Emission and Excitonic Bleaching in GaN Epilayers under High-Density Excitation (pages 465–470)

      R.A. Taylor, S. Hess, K. Kyhm, J. Smith, J.F. Ryan, G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii and M. Heuken

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<465::AID-PSSB465>3.0.CO;2-C

    88. Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN (pages 471–476)

      J. Holst, A. Hoffmann, I. Broser, D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, D. Schikora and K. Lischka

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<471::AID-PSSB471>3.0.CO;2-O

    89. Optical Guided Modes and Surface Acoustic Waves in GaN Grown on (0001) Sapphire Substrates (pages 477–480)

      A. Khan, R. Rimeika, D. Čiplys, R. Gaska and M.S. Shur

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<477::AID-PSSB477>3.0.CO;2-0

    90. Highly Photo-Excited Nitride Quantum Wells: Threshold for Exciton Bleaching (pages 481–486)

      P. Bigenwald, A. Kavokin, P. Christol, B. Gil and P. Lefebvre

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K

    91. Excitation Density Dependence of Photoluminescence and Barrier Doping Effect in InxGa1—xN Quantum Wells (pages 487–490)

      E. Oh, C.S. Sone, H. Park, O.H. Nam and Y. ParkOh

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<487::AID-PSSB487>3.0.CO;2-X

    92. High-Temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures (pages 491–494)

      I.P. Marko, E.V. Lutsenko, V.N. Pavlovskii, G.P. Yablonskii, O. Schön, H. Protzmann, M. Lünenbürger, M. Heuken, B. Schneller and K. Heime

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<491::AID-PSSB491>3.0.CO;2-G

    93. Hot Electrons and Holes in Highly Photoexcited GaN Epilayers (pages 495–499)

      A. Žukauskas, G. Tamulaitis, R. Gaska, M.S. Shur, M.A. Khan and J.W. Yang

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<495::AID-PSSB495>3.0.CO;2-0

    94. Finite-Temperature Band Gap Renormalization in Highly Photoexcited GaN Epilayers (pages 501–504)

      A. Žukauskas, S. Juršėnas, G. Kurilčik, G. Tamulaitis, M.S. Shur, R. Gaska, J.W. Yang and M.A. Khan

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<501::AID-PSSB501>3.0.CO;2-B

    95. Optical Nonlinearities in the Band Edge Region of Highly Excited (In)GaN Thin Films Studied via Femtosecond and Nanosecond Optical Pump–Probe Spectroscopy (pages 505–509)

      T.J. Schmidt, A.J. Fischer and J.J. Song

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<505::AID-PSSB505>3.0.CO;2-W

    96. Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature (pages 511–515)

      I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsulnikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann and D. Bimberg

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<511::AID-PSSB511>3.0.CO;2-7

    97. Evaluation of Optical Confinement in GaN-Based Lasing Structures (pages 517–520)

      S. Bidnyk, T.J. Schmidt and J.J. Song

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<517::AID-PSSB517>3.0.CO;2-K

    98. Pressure Studies of Defects and Impurities in Nitrides (pages 521–528)

      T. Suski, P. Perlin, C. Skierbiszewski, P. Wisniewski, L. Dmowski, M. Leszczynski and W. Walukiewicz

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<521::AID-PSSB521>3.0.CO;2-3

    99. Investigations on the V-Defect Formation in GaInN–GaN Multi Quantum Well Structures (pages 529–532)

      J. Off, F. Scholz, E. Ehrenbacher, O. Gfrörer, A. Hangleiter, G. Brockt and H. Lakner

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<529::AID-PSSB529>3.0.CO;2-8

    100. Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers (pages 533–536)

      N.M. Shmidt, D.V. Davydov, V.V. Emtsev, I.L. Krestnikov, A.A. Lebedev, W.V. Lundin, D.S. Poloskin, A.V. Sakharov, A.S. Usikov and A.V. Osinsky

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<533::AID-PSSB533>3.0.CO;2-S

    101. Micro Defects in Nearly Dislocation Free GaN Doped with Mg during High Pressure Crystallization (pages 537–540)

      I. Grzegory, J.A. Kozubowski, J. Borysiuk, J.L. Weyher, M. Boćkowski, B. Łucznik and S. Porowski

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<537::AID-PSSB537>3.0.CO;2-C

    102. Relaxation Effects on the Negatively Charged Mg Impurity in Zincblende GaN (pages 541–545)

      L.K. Teles, L.M.R. Scolfaro, J.R. Leite, L.E. Ramos, A. Tabata, J.L.P. Castineira and D.J. As

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<541::AID-PSSB541>3.0.CO;2-W

    103. The Origin of Red Luminescence from Mg-Doped GaN (pages 547–550)

      M.W. Bayerl, M.S. Brandt, E.R. Glaser, A.E. Wickenden, D.D. Koleske, R.L. Henry and M. Stutzmann

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<547::AID-PSSB547>3.0.CO;2-8

    104. Defect Complexes in Highly Mg-Doped GaN Studied by Raman Spectroscopy (pages 551–555)

      A. Kaschner, G. Kaczmarczyk, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt and D. Hommel

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<551::AID-PSSB551>3.0.CO;2-S

    105. Optical Spectroscopy of Mg- and C-Related Donor and Acceptor Levels in GaN Grown by MBE (pages 557–560)

      S. Strauf, P. Michler, J. Gutowski, U. Birkle, M. Fehrer, S. Einfeldt and D. Hommel

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<557::AID-PSSB557>3.0.CO;2-4

    106. Electrical Properties of the Si Implantation in Mg Doped p-GaN (pages 561–565)

      Wei-Chih Lai, M. Yokoyama, Chiung-Chi Tsai, Chen-Shiung Chang, Jan-Dar Guo, Jian-Shih Tsang and Shih-Hsiung Chan

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<561::AID-PSSB561>3.0.CO;2-O

    107. Electrical Properties of GaN Bulk Single Crystals Doped with Mg (pages 567–570)

      E. Litwin-Staszewska, T. Suski, I. Grzegory, S. Porowski, P. Perlin, J.L. Robert, S. Contreras, D. Wasik, A. Witowski, D. Cote and B. Clerjaud

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<567::AID-PSSB567>3.0.CO;2-0

    108. Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE (pages 571–576)

      Z. Bougrioua, J.-L. Farvacque, I. Moerman, P. Demeester, J.J. Harris, K. Lee, G. van Tendeloo, O. Lebedev and E.J. Thrush

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<571::AID-PSSB571>3.0.CO;2-K

    109. Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire (pages 577–580)

      Z.C. Feng, Y.T. Hou, M.F. Li, S.J. Chua, W. Wang and L. Zhu

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<577::AID-PSSB577>3.0.CO;2-X

    110. Mosaic Structure and Si Doping Related Peculiarities of Charge Carrier Transport in III–V Nitrides (pages 581–586)

      N.M. Shmidt, V.V. Emtsev, A.S. Kryzhanovsky, R.N. Kyutt, W.V. Lundin, D.S. Poloskin, V.V. Ratnikov, A.V. Sakharov, A.N. Titkov, A.S. Usikov and P. Girard

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<581::AID-PSSB581>3.0.CO;2-G

    111. Incorporation of Deep Defects in GaN Induced by Doping and Implantation Processes (pages 587–591)

      A. Krtschil, H. Witte, M. Lisker, J. Christen, A. Krost, U. Birkle, S. Einfeldt, D. Hommel, A. Wenzel and B. Rauschenbach

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<587::AID-PSSB587>3.0.CO;2-T

    112. Influence of Carbon Doping on the Photoconductivity in GaN Layers (pages 593–597)

      M. Lisker, A. Krtschil, H. Witte, J. Christen, A. Krost, U. Birkle, S. Einfeldt and D. Hommel

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<593::AID-PSSB593>3.0.CO;2-4

    113. Optical Selection Rules for Hexagonal GaN (pages 599–603)

      P. Tronc, Yu.E. Kitaev, G. Wang, M.F. Limonov, A.G. Panfilov and G. Neu

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<599::AID-PSSB599>3.0.CO;2-H

    114. Temperature Dependence of Photoluminescence Intensities of Undoped and Doped GaN (pages 605–608)

      M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<605::AID-PSSB605>3.0.CO;2-S

    115. A Study on the Silane Doping of Hetero-Epitaxial MOCVD Grown GaN (pages 609–613)

      P.R. Hageman, M.A.C. Devillers, A.R.A. Zauner, V. Kirilyuk, W.S. Bouwens, R.C.M. Crane and P.K. Larsen

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<609::AID-PSSB609>3.0.CO;2-C

    116. Doping of GSMBE-Grown Gallium Nitride Using Silane (pages 615–618)

      M. Kappers, J.-L. Guyaux and J.-C. Garcia

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<615::AID-PSSB615>3.0.CO;2-O

    117. Optical Properties of As-Grown, α-Particle Irradiated and N+2-Ion Implanted GaN (pages 619–623)

      H.W. Kunert, S. Juillaguet, J. J. Camassel, J.B. Malherbe, R.Q. Odendaal, D.J. Brink and L.C. Prinsloo

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<619::AID-PSSB619>3.0.CO;2-8

    118. Green Emission from Tb-Doped GaN Grown by MOVPE (pages 625–628)

      K. Hara, N. Ohtake and K. Ishii

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<625::AID-PSSB625>3.0.CO;2-K

    119. Emission Quantum Efficiency of Undoped and Eu Doped GaN Determined by Photocalorimetric Spectroscopy (pages 629–632)

      T. Maruyama, H. Sasaki, S. Morishima and K. Akimoto

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<629::AID-PSSB629>3.0.CO;2-4

    120. Characterisation of Epitaxial Laterally Overgrown Gallium Nitride Using Transmission Electron Microscopy (pages 633–637)

      D.M. Tricker, K. Jacobs and C.J. Humphreys

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<633::AID-PSSB633>3.0.CO;2-O

    121. Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure (pages 639–644)

      P. Hacke, A. Kuramata, K. Domen, K. Horino and T. Tanahashi

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<639::AID-PSSB639>3.0.CO;2-0

    122. The Atomic Structure of Threading Dislocations from Low-Angle to High-Angle Grain Boundaries in GaN/Sapphire Epitaxial Layers (pages 645–648)

      V. Potin, G. Nouet, P. Ruterana and R.C. Pond

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<645::AID-PSSB645>3.0.CO;2-C

    123. Dislocation Structure of Growth Hillocks in Homoepitaxial GaN (pages 649–654)

      G. Nowak, K. Pakuła, I. Grzegory, J.L. Weyher and S. Porowski

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<649::AID-PSSB649>3.0.CO;2-X

    124. Free-Carrier Response and Lattice Modes of Group III-Nitride Heterostructures Measured by Infrared Ellipsometry (pages 655–658)

      M. Schubert, J.A. Woollam, A. Kasic, B. Rheinländer, J. Off, B. Kuhn and F. Scholz

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<655::AID-PSSB655>3.0.CO;2-8

    125. Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy (pages 659–662)

      V. Kirchner, M. Fehrer, S. Figge, H. Heinke, S. Einfeldt, D. Hommel, H. Selke and P.L. Ryder

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<659::AID-PSSB659>3.0.CO;2-T

    126. A TEM Study of InGaN Layers and Quantum Wells Grown by MOCVD (pages 663–667)

      P. Ruterana, R. Aguinet and M.A. Poisson

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<663::AID-PSSB663>3.0.CO;2-C

    127. Photoluminescence Characterisation of Triangular Lattices of Holes and Pillars Etched in GaN Epilayers (pages 669–673)

      D. Coquillat, A. Ribayrol, R.M. De La Rue, P. Girard, O. Briot, R.L. Aulombard, D. Cassagne and C. Jouanin

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<669::AID-PSSB669>3.0.CO;2-P

    128. Surface Energies and Surface Dipoles at III-Nitride(111) Surfaces in Dependence on Stoichiometry (pages 675–678)

      U. Grossner, J. Furthmüller and F. Bechstedt

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<675::AID-PSSB675>3.0.CO;2-0

    129. Composition Analysis Using Elastic Recoil Detection (pages 679–682)

      L. Görgens, G. Dollinger, A. Bergmaier, O. Ambacher, L. Eastman, J.A. Smart, J.F. Shealy, R. Dimitrov, M. Stutzmann and A. Mitchell

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<679::AID-PSSB679>3.0.CO;2-L

    130. Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer (pages 683–689)

      H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel and I. Akasaki

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO;2-4

    131. TEM Study of the Behavior of Dislocations during ELO of GaN (pages 691–695)

      V. Bousquet, P. Vennéguès, B. Beaumont, M. Vaille and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<691::AID-PSSB691>3.0.CO;2-8

    132. A TEM Evaluation of ELOG GaN Grown on AlN Buffer Layer by HVPE on (0001) 6H-SiC (pages 697–700)

      P. Ruterana, B. Beaumont, P. Gibart and Yu. Melnik

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<697::AID-PSSB697>3.0.CO;2-L

    133. Morphological and Optical Characterization of GaN/AlN Heterostructures Grown on Si(111) Substrates by MBE (pages 701–706)

      R. Rinaldi, S. Antonaci, M. Anni, M. Lomascolo, R. Cingolani, A. Botchkarev and H. Morkoc

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<701::AID-PSSB701>3.0.CO;2-3

    134. Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine (pages 707–712)

      A. Koukitu, Y. Kumagai, N. Kubota and H. Seki

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<707::AID-PSSB707>3.0.CO;2-G

    135. Evolution with Temperature of the Strain State of GaN Thin Layers Grown on Different Substrates (pages 713–717)

      E. Deleporte, C. Guénaud, M. Voos, B. Beaumont and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<713::AID-PSSB713>3.0.CO;2-S

    136. Conduction Band Energy Spectrum of Two-Dimensional Electrons in GaN/AlGaN Heterojunctions (pages 719–725)

      W. Knap, E. Frayssinet, C. Skierbiszewski, C. Chaubet, M.L. Sadowski, D. Maude, M. Asif Khan and M.S. Shur

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<719::AID-PSSB719>3.0.CO;2-4

    137. Enhanced Two-Dimensional Electron Gas Confinement Effect on Transport Properties in AlGaN/InGaN/AlGaN Double-Heterostructures (pages 727–731)

      N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida and N. Kobayashi

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<727::AID-PSSB727>3.0.CO;2-8

    138. Electron Transport in MOVPE GaN Grown on Silicon Nitride Treated Sapphire (pages 733–736)

      H. Eshghi, D. Lancefield, B. Beaumont and P. Gibart

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<733::AID-PSSB733>3.0.CO;2-K

    139. High-Frequency Electron Mobility in GaN (pages 737–742)

      E.W.S. Caetano, J.A.P. da Costa and V.N. Freire

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<737::AID-PSSB737>3.0.CO;2-4

    140. MOCVD Growth and Transport Investigation of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures on Sapphire Substrates (pages 743–748)

      T. Wang, Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai and H. Ohno

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<743::AID-PSSB743>3.0.CO;2-G

    141. Photoconductivity in AlxGa1—xN with Different Al Contents (pages 749–753)

      D. Meister, M. Topf, I. Dirnstorfer, B.K. Meyer, R. schwarz and M. Heuken

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<749::AID-PSSB749>3.0.CO;2-T

    142. Influence of AlxGa1—xN Thickness on Transport Properties of a Two-Dimensional Electron Gas in Modulation Doped AlxGa1—xN/GaN Single Heterostructures (pages 755–759)

      B. Shen, T. Someya, M. Nishioka and Y. Arakawa

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<755::AID-PSSB755>3.0.CO;2-4

    143. Lattice Dynamics of Ternary Alloys (pages 761–768)

      F. Bechstedt and H. Grille

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<761::AID-PSSB761>3.0.CO;2-G

    144. Raman Scattering Study of Zincblende InxGa1–xN Alloys (pages 769–774)

      A. Tabata, E. Silveira, J.R. Leite, R. Trentin, L.M.R. Scolfaro, V. Lemos, T. Frey, D.J. As, D. Schikora and K. Lischka

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<769::AID-PSSB769>3.0.CO;2-L

    145. Strain Distribution in GaN Hexagons Measured by Raman Spectroscopy (pages 775–778)

      R. Seitz, T. Monteiro, E. Pereira and M. di Forte-Poisson

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<775::AID-PSSB775>3.0.CO;2-X

    146. Phonons in Hexagonal InN. Experiment and Theory (pages 779–783)

      V.Yu. Davydov, A.A. Klochikhin, M.B. Smirnov, V.V. Emtsev, V.D. Petrikov, I.A. Abroyan, A.I. Titov, I.N. Goncharuk, A.N. Smirnov, V.V. Mamutin, S.V. Ivanov and T. Inushima

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<779::AID-PSSB779>3.0.CO;2-H

    147. Observation of Phonon Modes in Bulk InGaN Films by Raman Scattering (pages 785–788)

      H. Harima, E. Kurimoto, Y. Sone, S. Nakashima, S. Chu, A. Ishida and H. Fujiyasu

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<785::AID-PSSB785>3.0.CO;2-T

    148. Local Vibrational Modes in p-Type GaN Observed by Raman Scattering (pages 789–792)

      H. Harima, T. Inoue, Y. Sone, S. Nakashima, M. Ishida and M. Taneya

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<789::AID-PSSB789>3.0.CO;2-D

    149. Strain Influence on III-Nitrides: Ab Initio Studies of Structural, Lattice-Dynamical, and Dielectric Properties (pages 793–798)

      J.-M. Wagner and F. Bechstedt

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<793::AID-PSSB793>3.0.CO;2-X

    150. Multi Phonon Resonant Raman Scattering in GaN/AlxGa1—xN Quantum Wells (pages 799–802)

      F. Demangeot, J. Gleize, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean and J. Massies

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<799::AID-PSSB799>3.0.CO;2-9

    151. Raman Microscopy of Lateral Epitaxial Overgrowth of GaN on Sapphire (pages 803–806)

      M. Pophristic, F.H. Long, M. Schurman, J. Ramer and I.T. Ferguson

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<803::AID-PSSB803>3.0.CO;2-S

    152. Disorder-Activated Scattering and Two-Mode Behavior in Raman Spectra of Isotopic GaN and AlGaN (pages 807–811)

      N. Wieser, O. Ambacher, H. Angerer, R. Dimitrov, M. Stutzmann, B. Stritzker and J.K.N. Lindner

      Article first published online: 9 NOV 1999 | DOI: 10.1002/(SICI)1521-3951(199911)216:1<807::AID-PSSB807>3.0.CO;2-C

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