Original Paper

Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells

  1. S. Keller,
  2. S.B. Fleischer,
  3. S.F. Chichibu†,
  4. J.E. Bowers,
  5. U.K. Mishra,
  6. S.P. DenBaars

Article first published online: 9 NOV 1999

DOI: 10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4

Issue

physica status solidi (b)

physica status solidi (b)

Volume 216, Issue 1, pages 269–272, November 1999

Additional Information

How to Cite

Keller, S., Fleischer, S., Chichibu, S., Bowers, J., Mishra, U. and DenBaars, S. (1999), Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells. physica status solidi (b), 216: 269–272. doi: 10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4

Author Information

  1. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93111, USA

  1. †

    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

Publication History

  1. Issue published online: 9 NOV 1999
  2. Article first published online: 9 NOV 1999
  3. Manuscript Received: 4 JUL 1999

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Abstract

The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump–probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The “funneling” effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.

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