Original Paper

Influence of Barrier Doping and Barrier Composition on Optical Gain in (In, Ga)N MQWs

  1. M. Vehse,
  2. P. Michler1,
  3. J. Gutowski1,
  4. S. Figge1,
  5. S. Hommel1,
  6. H. Selke2,
  7. P.L. Ryder2,
  8. S. Keller3,
  9. S.P. DenBaars3

Article first published online: 9 NOV 1999

DOI: 10.1002/(SICI)1521-3951(199911)216:1<331::AID-PSSB331>3.0.CO;2-7

Issue

physica status solidi (b)

physica status solidi (b)

Volume 216, Issue 1, pages 331–334, November 1999

Additional Information

How to Cite

Vehse, M., Michler, P., Gutowski, J., Figge, S., Hommel, S., Selke, H., Ryder, P., Keller, S. and DenBaars, S. (1999), Influence of Barrier Doping and Barrier Composition on Optical Gain in (In, Ga)N MQWs. physica status solidi (b), 216: 331–334. doi: 10.1002/(SICI)1521-3951(199911)216:1<331::AID-PSSB331>3.0.CO;2-7

Author Information

  1. 1

    Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany

  2. 2

    Institut für Werkstoffphysik und Strukturforschung, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany

  3. 3

    Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106-5050, USA

Publication History

  1. Issue published online: 9 NOV 1999
  2. Article first published online: 9 NOV 1999
  3. Manuscript Received: 4 JUL 1999

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Abstract

The influence of barrier doping and barrier composition on the optical gain in (In, Ga)N multiple quantum wells is studied under stationary conditions. Systematic temperature dependent gain measurements are performed by means of the variable-stripe-length method. Furthermore, PL spectra are recorded in order to study the temperature dependence of the quantum efficiency which gives information on activation processes to nonradiative recombination channels. The measured threshold densities and gain can successfully be explained by consideration of localization effects.

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