physica status solidi (a)

Cover image for physica status solidi (a)

January 1999

Volume 171, Issue 1

Pages R1–R4, 5–409

Currently known as: physica status solidi (a)

    1. Investigation on the Magnetic Interaction between Neighboring Grains in Insulating Granular Film of Co54Al19O27 (pages R1–R2)

      Z. G. Zhang, C. Li and S. H. Ge

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<R1::AID-PSSA99991>3.0.CO;2-2

    2. A Simple Model of the Magnetoresistance Contribution to the Magnetoimpedance Effect in Thin Films (pages R3–R4)

      J. M. Barandiarán, G. V. Kurlyandskaya, M. Vázquez, J. Gutiérrez, D. Garcia and J. L. Muñoz

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<R3::AID-PSSA99993>3.0.CO;2-V

    3. Kinks on Partials of 60° Dislocations in Silicon as Revealed by a Novel TEM Technique (pages 5–16)

      H. Alexander, H. R. Kolar and J. C. H. Spence

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<5::AID-PSSA5>3.0.CO;2-L

    4. Dislocation Kink Dynamics in Crystals with Deep Peierls Potential Relief (pages 17–26)

      Yu. L. Iunin and V. I. Nikitenko

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<17::AID-PSSA17>3.0.CO;2-2

    5. Hydrogen Enhanced Dislocation Glides in Silicon (pages 27–34)

      Y. Yamashita, F. Jyobe, Y. Kamiura and K. Maeda

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<27::AID-PSSA27>3.0.CO;2-0

    6. Recombination-Enhanced Dislocation Motion in SiGe and Ge (pages 35–40)

      I. Yonenaga, M. Werner, M. Bartsch, U. Messerschmidt and E. R. Werner

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<35::AID-PSSA35>3.0.CO;2-A

    7. Dislocation Velocities and Mechanical Strength of Bulk GeSi Crystals (pages 41–46)

      I. Yonenaga

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<41::AID-PSSA41>3.0.CO;2-W

    8. Plasticity of III—V Compounds at Low Temperatures (pages 47–52)

      T. Suzuki, T. Yasutomi, T. Tokuoka and I. Yonenaga

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<47::AID-PSSA47>3.0.CO;2-X

    9. Structure and Climb of Faulted Dipoles in GaAs (pages 53–57)

      I. Yonenaga, S.-H. Lim, D. Shindo, P. D. Brown and C. J. Humphreys

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<53::AID-PSSA53>3.0.CO;2-I

    10. Partial Dislocation Source in InSb: A New Mechanism (pages 59–65)

      S. Branchu, F. Pailloux, H. Garem, J. Rabier and J. L. Demenet

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<59::AID-PSSA59>3.0.CO;2-J

    11. Dislocation Nucleation and Multiplication at Crack Tips in Silicon (pages 67–82)

      C. Scandian, H. Azzouzi, N. Maloufi, G. Michot and A. George

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<67::AID-PSSA67>3.0.CO;2-T

    12. Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry (pages 83–88)

      C. Levade and G. Vanderschaeve

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<83::AID-PSSA83>3.0.CO;2-C

    13. Recognition and Distribution of A(g) and B(g) Dislocations in Indentation Deformation Zones on {111} and {110} Surfaces of CdTe (pages 89–97)

      J. Schreiber, L. Höring, H. Uniewski, S. Hildebrandt and H. S. Leipner

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<89::AID-PSSA89>3.0.CO;2-D

    14. Stacking Fault Energies of Tetrahedrally Coordinated Crystals (pages 99–103)

      S. Takeuchi and K. Suzuki

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<99::AID-PSSA99>3.0.CO;2-B

    15. Dislocations Generated in Si Annealed under Normal or High Pressure (pages 105–110)

      M. Lefeld-Sosnowska

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<105::AID-PSSA105>3.0.CO;2-H

    16. Impurity Reaction with Dislocations in Semiconductors (pages 111–122)

      K. Sumino

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<111::AID-PSSA111>3.0.CO;2-T

    17. Chemistry and Physics of Segregation of Impurities at Extended Defects in Silicon (pages 123–132)

      S. Pizzini

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<123::AID-PSSA123>3.0.CO;2-H

    18. Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects (pages 133–146)

      R. Hull, E. A. Stach, R. Tromp, F. Ross and M. Reuter

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<133::AID-PSSA133>3.0.CO;2-D

    19. Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM (pages 147–158)

      L. Fedina, A. Gutakovskii, A. Aseev, J. Van Landuyt and J. Vanhellemont

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U

    20. Extended Point Defect Structures at Intersections of Screw Dislocations in Si: A Molecular Dynamics Study (pages 159–166)

      A. Yu. Belov, K. Scheerschmidt and U. Gösele

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<159::AID-PSSA159>3.0.CO;2-I

    21. Interaction of Oxygen with Threading Dislocations in GaN (pages 167–173)

      R. Jones, J. Elsner, M. Haugk, R. Gutierrez, Th. Frauenheim, M. I. Heggie, S. Öberg and P. R. Briddon

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<167::AID-PSSA167>3.0.CO;2-M

    22. Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon (pages 175–189)

      H. J. Möller, L. Long, M. Werner and D. Yang

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<175::AID-PSSA175>3.0.CO;2-Q

    23. Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon (pages 191–196)

      A. Misiuk

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<191::AID-PSSA191>3.0.CO;2-Y

    24. Structure of Oxygen and Silicon Interstitials in Silicon (pages 197–201)

      J. Dzelme, I. Ertsinsh, B. Zapol and A. Misiuk

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<197::AID-PSSA197>3.0.CO;2-A

    25. Influence of Dislocations on Nitrogen–Oxygen Complex in Silicon (pages 203–207)

      Deren Yang and Duanlin Que

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<203::AID-PSSA203>3.0.CO;2-L

    26. Gettering of Fe at the End of Range Loops in Fe-Implanted InP (pages 209–214)

      C. Frigeri, A. Carnera, A. Gasparotto, F. Priolo, B. Fraboni, A. Camporese and G. Rosetto

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<209::AID-PSSA209>3.0.CO;2-Y

    27. Relaxation of Misfit-Induced Strain in Semiconductor Heterostructures (pages 215–225)

      H. P. Strunk, M. Albrecht, S. Christiansen, W. Dorsch, U. Hörmann, B. Jahnen and T. Remmel

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<215::AID-PSSA215>3.0.CO;2-9

    28. Dislocations in Relaxed SiGe/Si Heterostructures (pages 227–238)

      E. A. Fitzgerald, M. T. Currie, S. B. Samavedam, T. A. Langdo, G. Taraschi, V. Yang, C. W. Leitz and M. T. Bulsara

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<227::AID-PSSA227>3.0.CO;2-Y

    29. Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication (pages 239–250)

      V. I. Vdovin

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<239::AID-PSSA239>3.0.CO;2-M

    30. Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems (pages 251–265)

      B. Pichaud, M. Putero and N. Burle

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<251::AID-PSSA251>3.0.CO;2-9

    31. Atomistic Modeling of Misfit Dislocations for Ge/(001)Si and Ge/(111)Si (pages 267–274)

      M. Dornheim and H. Teichler

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<267::AID-PSSA267>3.0.CO;2-I

    32. Formation of Dislocations in InGaAs/GaAs Heterostructures (pages 275–282)

      J. Katcki, J. Ratajczak, J. Adamczewska, F. Phillipp, N. Y. Jin-Phillipp, K. Regiński and M. Bugajski

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<275::AID-PSSA275>3.0.CO;2-M

    33. Selective Electrochemical Profiling of Threading Dislocations in Mismatched InGaAs/GaAs Heteroepitaxial Systems (pages 283–288)

      Á. Nemcsics, F. Riesz and L. Dobos

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<283::AID-PSSA283>3.0.CO;2-Q

    34. Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers (pages 289–294)

      J. Domagała, J. Bąk-Misiuk, J. Adamczewska, Z. R. Zytkiewicz, E. Dynowska, J. Trela, D. Dobosz, E. Janik and M. Leszczyński

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<289::AID-PSSA289>3.0.CO;2-2

    35. Quantum Interference at Misfit Dislocations in Semiconductor Heterostructures (pages 295–299)

      T. Wosiński, T. Figielski and A. Ma¸kosa

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<295::AID-PSSA295>3.0.CO;2-E

    36. Structural and Electrical Properties of Metal Silicide Precipitates in Silicon (pages 301–310)

      M. Seibt, H. Hedemann, A. A. Istratov, F. Riedel, A. Sattler and W. Schröter

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<301::AID-PSSA301>3.0.CO;2-P

    37. Effect of Defect Bands on the Electrical Characteristics of Irradiated GaAs and Si (pages 311–317)

      Zs. J. Horváth, E. Gombia, D. Pal, Cs. Kovacsics, G. Capannese, I. Pintér, M. Ádám, R. Mosca, Vo. Van Tuyen and L. Dózsa

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<311::AID-PSSA311>3.0.CO;2-L

    38. Electrical Study of Dislocated Si- and C-Faces of n-Type 6H-SiC (pages 319–324)

      J. L. Demenet, V. Tillay and J. F. Barbot

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<319::AID-PSSA319>3.0.CO;2-Q

    39. Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN (pages 325–339)

      G. Salviati, M. Albrecht, C. Zanotti-Fregonara, N. Armani, M. Mayer, Y. Shreter, M. Guzzi, Yu. V. Melnik, K. Vassilevski, V. A. Dmitriev and H. P. Strunk

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<325::AID-PSSA325>3.0.CO;2-1

    40. Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon (pages 341–346)

      O. V. Feklisova, G. Mariani-Regula, B. Pichaud and E. B. Yakimov

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<341::AID-PSSA341>3.0.CO;2-9

    41. On the Influence of Dislocation on the Luminescence of Si:Er (pages 347–351)

      A. Cavallini, B. Fraboni, S. Binetti, S. Pizzini, L. Lazzarini and G. Salviati

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<347::AID-PSSA347>3.0.CO;2-M

    42. Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment (pages 353–363)

      A. Fedotov, N. Drozdov, E. Katz, Yu. Ilyashuk, A. Mazanik and A. Ulyashin

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<353::AID-PSSA353>3.0.CO;2-Y

    43. Amorphous Phase Influence on the Optical Bandgap of Polysilicon (pages 365–370)

      C. Rotaru, S. Nastase and N. Tomozeiu

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<365::AID-PSSA365>3.0.CO;2-M

    44. Dislocations in Microelectronics (pages 371–376)

      S. Mil'shtein

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<371::AID-PSSA371>3.0.CO;2-Y

    45. Positron Annihilation at Dislocations and Related Point Defects in Semiconductors (pages 377–382)

      H. S. Leipner, C. G. Hübner, T. E. M. Staab, M. Haugk and R. Krause-Rehberg

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<377::AID-PSSA377>3.0.CO;2-A

    46. The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe (pages 383–388)

      V. Eremenko, N. Abrosimov and A. Fedorov

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<383::AID-PSSA383>3.0.CO;2-M

    47. Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals (pages 389–394)

      D. Klinger, M. Lefeld-Sosnowska, D. Żymierska, J. Auleytner, B. Kozankiewicz and K. Regiński

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<389::AID-PSSA389>3.0.CO;2-Z

    48. Reciprocal Space Mapping and Reflectivity Investigations of Epi-Ready InP Substrate (pages 395–401)

      J. Sass, K. Mazur, A. Gladki, A. Turos and F. Eichhorn

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<395::AID-PSSA395>3.0.CO;2-A

    49. Makyoh Topography for the Study of Large-Area Extended Defects in Semiconductors (pages 403–409)

      F. Riesz

      Version of Record online: 29 JAN 1999 | DOI: 10.1002/(SICI)1521-396X(199901)171:1<403::AID-PSSA403>3.0.CO;2-D

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