physica status solidi (a)

Cover image for physica status solidi (a)

November 1999

Volume 176, Issue 1

Pages 5–796

Currently known as: physica status solidi (a)

    1. GaN as Seen by the Industry (pages 5–14)

      J.-Y. Duboz

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<5::AID-PSSA5>3.0.CO;2-D

    2. Present Status of InGaN-Based Laser Diodes (pages 15–22)

      S. Nakamura

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<15::AID-PSSA15>3.0.CO;2-6

    3. CW Operation of AlGaInN–GaN Laser Diodes (pages 23–30)

      T. Asano, K. Yanashima, T. Asatsuma, T. Hino, T. Yamaguchi, S. Tomiya, K. Funato, T. Kobayashi and M. Ikeda

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<23::AID-PSSA23>3.0.CO;2-G

    4. Fabrication and Characterization of GaN-Based Laser Diode Grown on Thick n-AlGaN Contact Layer (pages 31–34)

      T. Takeuchi, T. Detchprohm, M. Yano, M. Yamaguchi, N. Hayashi, M. Iwaya, K. Isomura, K. Kimura, H. Amano, I. Akasaki, Yw. Kaneko, S. Watanabe, Y. Yamaoka, R. Shioda, T. Hidaka, Ys. Kaneko and N. Yamada

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<31::AID-PSSA31>3.0.CO;2-Q

    5. Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact (pages 35–38)

      M. Kuramoto, C. Sasaoka, Y. Hisanaga, A. Kimura, A. A. Yamaguchi, H. Sunakawa, N. Kuroda, M. Nido, A. Usui and M. Mizuta

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<35::AID-PSSA35>3.0.CO;2-2

    6. Recombination Dynamics in InxGa1—xN Multiple-Quantum-Well Based Laser Diodes under High Photoexcitation (pages 39–43)

      Y. Narukawa, Y. Kawakami, Sg. Fujita and S. Nakamura

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<39::AID-PSSA39>3.0.CO;2-F

    7. 346 nm Emission from AlGaN Multi-Quantum-Well Light Emitting Diode (pages 45–48)

      T. Nishida and N. Kobayashi

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<45::AID-PSSA45>3.0.CO;2-0

    8. Room-Temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure (pages 49–52)

      M. Kneissl, D. P. Bour, C. G. Van de Walle, L. T. Romano, J. E. Northrup, R. M. Wood, M. Teepe, T. Schmidt and N. M. Johnson

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<49::AID-PSSA49>3.0.CO;2-D

    9. Room-Temperature CW Operation of GaInN Multiple Quantum Well Laser Diodes with Optimized Indium Content (pages 53–57)

      A. Tsujimura, A. Ishibashi, Y. Hasegawa, S. Kamiyama, I. Kidoguchi, N. Otsuka, R. Miyanaga, G. Sugahara, M. Suzuki, M. Kume, K. Harafuji and Y. Ban

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<53::AID-PSSA53>3.0.CO;2-A

    10. Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes (pages 59–62)

      M. Hansen, A. C. Abare, P. Kozodoy, T. M. Katona, M. D. Craven, J. S. Speck, U. K. Mishra, L. A. Coldren and S. P. DenBaars

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<59::AID-PSSA59>3.0.CO;2-B

    11. Growth and Structural Characterization of InGaN Vertical Cavity Surface Emitting Lasers Operating at Room Temperature (pages 63–66)

      T. Someya, R. Werner, A. Forchel and Y. Arakawa

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<63::AID-PSSA63>3.0.CO;2-8

    12. Dielectric Bragg Mirrors for InGaN Surface-Emitting Lasers (pages 67–71)

      R. W. Martin, Taek Kim, D. Burns, I. M. Watson, M. D. Dawson, T. F. Krauss, J. H. Marsh, R. M. De La Rue, S. Romani and H. Kheyrandish

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<67::AID-PSSA67>3.0.CO;2-L

    13. Mode Conversion in GaN Based Laser Structures on Sapphire Due to the Birefringence of the Nitrides (pages 73–77)

      S. Heppel, R. Wirth, J. Off, F. Scholz, A. Hangleiter, H. Obloh, J. Wagner, C. Kirchner and M. Kamp

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<73::AID-PSSA73>3.0.CO;2-6

    14. Quantum Capture of Injected Electrons in GaN-Based Laser Heterostructures (pages 79–83)

      N. A. Zakhleniuk, C. R. Bennett, V. N. Stavrou, M. Babiker and B. K. Ridley

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<79::AID-PSSA79>3.0.CO;2-7

    15. Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures (pages 85–90)

      S. F. Chichibu, T. Deguchi, T. Sota, K. Wada, S. P. DenBaars, T. Mukai and S. Nakamura

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<85::AID-PSSA85>3.0.CO;2-T

    16. Mass Production of High Brightness Blue and Green LEDs by MOCVD (pages 91–98)

      C. A. Tran, R. F. Karlicek Jr., M. G. Brown, I. Elliashevich, A. Gurary, M. Schurman and R. Stall

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<91::AID-PSSA91>3.0.CO;2-E

    17. GaN/SiC Quasi-Substrates for GaN-Based LEDs (pages 99–102)

      V. Schwegler, C. Kirchner, M. Seyboth, M. Kamp, K. J. Ebeling, Yu. V. Melnik, A. E. Nikolaev, D. Tsvetkov and V. A. Dmitriev

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<99::AID-PSSA99>3.0.CO;2-3

    18. Characterization of InGaN/GaN Multiple Quantum Well Structures. Application to LEDs (pages 103–107)

      F. Huet, M. A. di Forte-Poisson, A. Romann, M. Tordjman and J. di Persio

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<103::AID-PSSA103>3.0.CO;2-H

    19. Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures (pages 109–112)

      H. Lahrèche, M. Vaille, B. Beaumont, M. Laügt, P. Vennéguès and P. Gibart

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<109::AID-PSSA109>3.0.CO;2-U

    20. Growth of Eu Doped GaN and Electroluminescence from MIS Structure (pages 113–117)

      S. Morishima, T. Maruyama, M. Tanaka and K. Akimoto

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<113::AID-PSSA113>3.0.CO;2-D

    21. Scanning Electroluminescence Microscopy: A Powerful Novel Characterization Tool for Light Emitting Diodes (pages 119–123)

      P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner and M. Kamp

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<119::AID-PSSA119>3.0.CO;2-Q

    22. Spectra and Quantum Efficiency of Light-Emitting Diodes Based on GaN Heterostructures with Quantum Wells (pages 125–130)

      A. E. Yunovich, V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. N. Kovalev and F. I. Manyakhin

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<125::AID-PSSA125>3.0.CO;2-1

    23. Electroluminescence Characterization of Cubic Gallium Nitride p–n Junctions Grown on SiC/Si Substrates by MBE (pages 131–135)

      H. Gamez-Cuatzin, J. Tardy, P. Rojo-Romeo, A. Philippe, C. Bru-Chevallier, A. Souifi, G. Guillot, E. Martinez-Guerrero, G. Feuillet, B. Daudin, P. Aboughé-Nzé and Y. Monteil

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<131::AID-PSSA131>3.0.CO;2-D

    24. Study on Electroluminescence Spectrum and Waveguide Loss of GaInN Multiple Quantum Well Lasers (pages 137–140)

      Y. Kaneko, R. Shioda, N. Yamada, T. Takeuchi, H. Amano and I. Akasaki

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<137::AID-PSSA137>3.0.CO;2-Q

    25. Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN (pages 141–145)

      E. Monroy, F. Calle, E. Muñoz, B. Beaumont, F. Omnès and P. Gibart

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<141::AID-PSSA141>3.0.CO;2-9

    26. Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density (pages 147–151)

      C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano and I. Akasaki

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<147::AID-PSSA147>3.0.CO;2-M

    27. Quantum Yield of GaN and (Ga, Al)N Band-Gap Graded Ultraviolet p–n Detectors (pages 153–156)

      K. J. Pluciński and M. J. Małachowski

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<153::AID-PSSA153>3.0.CO;2-Y

    28. Effects of Bias on the Responsivity of GaN Metal–Semiconductor–Metal Photodiodes (pages 157–161)

      E. Monroy, F. Calle, E. Muñoz and F. Omnès

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<157::AID-PSSA157>3.0.CO;2-I

    29. Characterization of AlGaN-Schottky Diodes Grown by Plasma Induced Molecular Beam Epitaxy (pages 163–167)

      U. Karrer, A. Dobner, O. Ambacher and M. Stutzmann

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<163::AID-PSSA163>3.0.CO;2-U

    30. Towards an AlGaN, Solar-Blind, p–i–n Photodetector (pages 169–173)

      D. L. Pulfrey, J. J. Kuek, B. D. Nener, G. Parish, U. K. Mishra and E. J. Tarsa

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<169::AID-PSSA169>3.0.CO;2-6

    31. Results, Potential and Challenges of High Power GaN-Based Transistors (pages 175–178)

      L. F. Eastman

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<175::AID-PSSA175>3.0.CO;2-I

    32. DC and RF Characteristics of AlN/GaN Doped Channel Heterostructure Field Effect Transistor (pages 179–181)

      I. Daumiller, P. Schmid, E. Kohn, C. Kirchner, M. Kamp, K. J. Ebeling, L. L. Pond and C. Weitzel

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<179::AID-PSSA179>3.0.CO;2-2

    33. AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400 °C (pages 183–187)

      J. Hilsenbeck, W. Rieger, E. Nebauer, W. John, G. Tränkle, J. Würfl, A. Ramakrishan and H. Obloh

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<183::AID-PSSA183>3.0.CO;2-M

    34. GaN-Based Quantum-Effect Electron Devices Using Quantum Interference of Hot Electron Waves (pages 189–193)

      J. Shirakashi, M. Shimizu and H. OkumuraShirakashi

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<189::AID-PSSA189>3.0.CO;2-Z

    35. Polarization Field Determination in AlGaN/GaN HFETs (pages 195–199)

      J. A. Garrido, A. Jiménez, J. L. Sánchez-Rojas, E. Muñoz, F. Omnès and P. Gibart

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<195::AID-PSSA195>3.0.CO;2-A

    36. Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates (pages 201–204)

      S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, A. Khan, J. W. Yang, G. Simin, A. Ping and T. Adesida

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<201::AID-PSSA201>3.0.CO;2-L

    37. Microwave Simulation on the Performance of High Power GaN/AlGaN Heterostructure Field Effect Transistors (pages 205–208)

      J. Deng, B. Iñiguez, M. S. Shur, R. Gaska, M. A. Khan and J. W. Yang

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<205::AID-PSSA205>3.0.CO;2-5

    38. Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs (pages 209–212)

      R. Dietrich, A. Vescan, A. Wieszt, H. Leier, K. S. Boutros, J. M. Redwing, K. Kornitzer, R. Freitag, T. Ebner and K. Thonke

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q

    39. Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs (pages 213–217)

      B. S. Shelton, M. M. Wong, T.-G. Zhu, C. J. Eiting, D. J. H. Lambert, D. E. Lin and R. D. Dupuis

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<213::AID-PSSA213>3.0.CO;2-9

    40. Effects of Built-in Polarization Field on the Optical Properties of AlGaN/GaN Quantum Wells (pages 219–225)

      N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt and J. Massies

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<219::AID-PSSA219>3.0.CO;2-M

    41. Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure (pages 227–230)

      M. Asif Khan, J. W. Yang, G. Simin, H. zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis and A. Zukauskas

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<227::AID-PSSA227>3.0.CO;2-Q

    42. MOVPE Growth and Luminescence Properties of GaAsN Alloys with Higher Nitrogen Concentrations (pages 231–235)

      K. Onabe, D. Aoki, J. Wu, H. Yaguchi and Y. Shiraki

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<231::AID-PSSA231>3.0.CO;2-9

    43. MOVPE Growth of In-Rich InxGa1—xN (0.5 < x < 1) Films on α-Al2O3(0001) (pages 237–241)

      A. Yamamoto, Y. Nakagawa, T. Sugiura and A. Hashimoto

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<237::AID-PSSA237>3.0.CO;2-M

    44. Growth of High Mobility AlGaN/GaN Heterostructures by Ammonia-Molecular Beam Epitaxy (pages 243–246)

      J. B. Webb, H. Tang, J. A. Bardwell and P. Coleridge

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<243::AID-PSSA243>3.0.CO;2-Y

    45. MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages (pages 247–252)

      V. V. Mamutin, V. A. Vekshin, V. Yu. Davydov, V. V. Ratnikov, T. V. Shubina, S. V. Ivanov, P. S. Kopev, M. Karlsteen, U. Söderwall and M. Willander

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<247::AID-PSSA247>3.0.CO;2-I

    46. On the Possible Origins of Low Indium Incorporation during MOVPE of InGaN (pages 253–256)

      R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, I. Yu. Estratov, A. N. Vorobev and Yu. N. Makarov

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<253::AID-PSSA253>3.0.CO;2-U

    47. Classical and Quantum Simulations of In and Al Incorporation in GaN (pages 257–261)

      J. A. Chisholm and P. D. Bristowe

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<257::AID-PSSA257>3.0.CO;2-E

    48. Solid Incorporation of AlGaN and Influence of Growth Interruption on GaN/AlGaN Quantum Well Structures Grown by MOCVD (pages 263–267)

      S. C. Choi, J.-H. Kim, J. Y. Choi and G. M. Yang

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<263::AID-PSSA263>3.0.CO;2-Q

    49. Metalorganic Molecular Beam Epitaxy of InGaN Layers and Their Optical Properties (pages 269–272)

      Min-Ho Kim, Jun-Kyu Cho, In-Hwan Lee and Seong-Ju Park

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<269::AID-PSSA269>3.0.CO;2-2

    50. InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy (pages 273–277)

      S. Nakamura, A. Kikuchi, K. Kusakabe, D. Sugihara, Y. Toyoura, T. Yamada and K. Kishino

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<273::AID-PSSA273>3.0.CO;2-M

    51. Growth and Characterization of Thick GaAsN Epilayers and GaInNAs/GaAs Multiquantum Wells (pages 279–283)

      P. Gilet, A. Chenevas-Paule, P. Duvaut, L. Grenouillet, P. Holliger, A. Million, G. Rolland and C. Vannuffel

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<279::AID-PSSA279>3.0.CO;2-Z

    52. Relaxation Processes of AlGaN/GaN Heterostructures Grown onto Single Crystal GaN(0001) Substrates (pages 285–290)

      S. H. Christiansen, M. Albrecht, H. P. Strunk, C. T. Foxon, D. Korakakis, I. Grzegory and S. Porowski

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<285::AID-PSSA285>3.0.CO;2-A

    53. On the Impact of Microstructure on Luminescence of InGaN/GaN Multi Quantum Wells Grown by Molecular Beam Epitaxy (pages 291–295)

      T. Böttcher, S. Einfeldt, S. Figge, V. Kirchner, H. Heinke, D. Hommel, D. Rudloff, T. Riemann and J. Christen

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<291::AID-PSSA291>3.0.CO;2-M

    54. Indium Incorporation and Droplet Formation during InGaN Molecular Beam Epitaxy (pages 297–300)

      O. V. Bord, R. A. Talalaev, S. Yu. Karpov and Yu. N. Makarov

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<297::AID-PSSA297>3.0.CO;2-Z

    55. Quantitative Model for the MBE-Growth of Ternary Nitrides (pages 301–305)

      R. Averbeck and H. Riechert

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<301::AID-PSSA301>3.0.CO;2-H

    56. Spectroscopic Studies of InGaN Ternary Alloys (pages 307–311)

      H. P. D. Schenk, P. de Mierry, F. Omnès and P. Gibart

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<307::AID-PSSA307>3.0.CO;2-U

    57. Multiparameter Statistical Design of Experiments for GaN Growth Optimization (pages 313–317)

      A. Bar-Ilan, S. Zamir, O. KatzBar-Ilan, B. Meyler and J. Salzman

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<313::AID-PSSA313>3.0.CO;2-5

    58. The Growth of Gallium Nitride Films Produced by Reactive Sputtering at Low Temperature (pages 319–322)

      W. T. Young, S. R. P. Silva, M. Benyoucef, M. Kuball, J. V. Anguita, J. M. Shannon, K. P. Homewood and B. J. Sealy

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<319::AID-PSSA319>3.0.CO;2-I

    59. 2.6 μm/h High-Speed Growth of GaN by RF-Molecular Beam Epitaxy and Improvement of Crystal Quality by Migration Enhanced Epitaxy (pages 323–328)

      D. Sugihara, A. Kikuchi, K. Kusakabe, S. Nakamura, Y. Toyoura, T. Yamada and K. Kishino

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<323::AID-PSSA323>3.0.CO;2-1

    60. Low-Temperature Synthesis of Gallium Nitride Thin Films Using Reactive Rf-Magnetron Sputtering (pages 329–332)

      V. Bondar, I. Kucharsky, B. Simkiv, L. Akselrud, V. Davydov, Yu. Dubov and S. Popovich

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<329::AID-PSSA329>3.0.CO;2-E

    61. Growth Kinetics of GaN in Ammonia Atmosphere (pages 333–336)

      S. Yu Karpov, R. A. Talalaev, Yu. N. Makarov, N. Grandjean, J. Massies and B. Damilano

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<333::AID-PSSA333>3.0.CO;2-Y

    62. Effect of Hydrogen on GaN Growth by Remote Plasma-Enhanced Metal-Organic Chemical Vapor Deposition (pages 337–342)

      Min Hong Kim, Hyun Jin Kim, Hyun Seok Na, Feng Qi and Euijoon Yoon

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<337::AID-PSSA337>3.0.CO;2-I

    63. (GaMg)N — New Wide Band Gap Semiconductor (pages 343–346)

      T. Suski, P. Perlin, A. Pietraszko, M. Leszczyński, M. Boćkowski, I. Grzegory and S. Porowski

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<343::AID-PSSA343>3.0.CO;2-U

    64. Prism Coupling Technique for Optical Characterization of LP-MOVPE Al xGa1–xN Thin Film Waveguides (pages 347–350)

      E. Dogheche, B. Belgacem, D. Remiens, P. Ruterana and F. Fmnes

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<347::AID-PSSA347>3.0.CO;2-E

    65. Electrical and Photoelectronic Properties of Hexagonal GaN (pages 351–354)

      R. Seitz, C. Gaspar, T. Monteiro, L. Pereira, E. Pereira, O. Schön and M. Heuken

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<351::AID-PSSA351>3.0.CO;2-Y

    66. Nano-Fabrication of GaN Pillars Using Focused Ion Beam Etching (pages 355–358)

      M. Kuball, F. H. Morrissey, M. Benyoucef, I. Harrison, D. Korakakis and C. T. Foxon

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<355::AID-PSSA355>3.0.CO;2-I

    67. The Low-Field Electron Mobility in Bulk AlGaN (pages 359–362)

      B. K. Ridley

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<359::AID-PSSA359>3.0.CO;2-2

    68. Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD (pages 363–367)

      J. J. Harris, K. J. Lee, I. Harrison, L. B. Flannery, D. Korakakis, T. S. Cheng, C. T. Foxon, Z. Bougrioua, I. Moerman, W. Van der Stricht, E. J. Thrush, B. Hamilton and K. Ferhah

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<363::AID-PSSA363>3.0.CO;2-M

    69. Hot Electron Energy Relaxation in Gallium Nitride (pages 369–372)

      N. M. Stanton, P. Hawker, A. J. Kent, T. S. Cheng and C. T. Foxon

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<369::AID-PSSA369>3.0.CO;2-Z

    70. Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE (pages 373–378)

      V. V. Mamutin, V. A. Vekshin, V. Yu. Davydov, V. V. Ratnikov, Yu. A. Kudriavtsev, B. Ya. Ber, V. V. Emtsev and S. V. Ivanov

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<373::AID-PSSA373>3.0.CO;2-I

    71. Growth and Characterization of Thick Si-Doped AlGaN Epilayers on Sapphire Substrates (pages 379–384)

      W. V. Lundin, A. S. Usikov, A. V. Sakharov, V. V. Tretyakov, D. V. Poloskin, N. N. Ledentsov and A. Hoffmann

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<379::AID-PSSA379>3.0.CO;2-V

    72. Mg-Induced Kinetical Changes in the Growth of Cubic and Hexagonal GaN by Molecular Beam Epitaxy (pages 385–390)

      G. Mula, B. Daudin and Ph. Peyla

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<385::AID-PSSA385>3.0.CO;2-6

    73. Analysis of the Defect Structure of Epitaxial GaN (pages 391–395)

      H. Heinke, V. Kirchner, S. Einfeldt and D. Hommel

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<391::AID-PSSA391>3.0.CO;2-I

    74. Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE (pages 397–400)

      Y. Taniyasu, Y. Watanabe, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa and K. Takahashi

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<397::AID-PSSA397>3.0.CO;2-V

    75. Influence of Si Doping on the Subgrain Structure of GaN Grown on AlN/Si(111) (pages 401–406)

      S. I. Molina, A. M. Sánchez, F. J. Pacheco, R. García, M. A. Sánchez-García and E. Calleja

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<401::AID-PSSA401>3.0.CO;2-D

    76. GaN Substrates: Growth and Characterization (pages 407–410)

      O. Kryliouk, M. Reek, M. Mastro, T. Anderson and B. Chai

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<407::AID-PSSA407>3.0.CO;2-Q

    77. The GaN Growth by a Hot Filament Metalorganic Vapor Phase Deposition Technique (pages 411–414)

      T. Boufaden, A. Rebey, I. Halidou, Z. Chine, S. Haffouz and B. El Jani

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<411::AID-PSSA411>3.0.CO;2-9

    78. Thick Hydride Vapour Phase Epitaxial GaN Layers Grown on Sapphire with Different Buffers (pages 415–419)

      T. Paskova, J. Birch, S. Tungasmita, R. Beccard, M. Heuken, E. B. Svedberg, P. Runesson, E. M. Goldys and B. Monemar

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<415::AID-PSSA415>3.0.CO;2-U

    79. Thick GaN Growth on GaAs(111) Substratres at 1000 °C with HVPE (pages 421–424)

      F. Hasegawa, M. Minami, K. Sunaba and T. Suemasu

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<421::AID-PSSA421>3.0.CO;2-5

    80. Experimental and Theoretical Study of the Growth of GaN on Sapphire by HVPE (pages 425–428)

      A. Trassoudaine, E. Aujol, P. Disseix, D. Castelluci and R. Cadoret

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<425::AID-PSSA425>3.0.CO;2-Q

    81. Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE (pages 429–433)

      V. Wagner, O. Parillaud, H. J. Bühlmann and M. Ilegems

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<429::AID-PSSA429>3.0.CO;2-A

    82. Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere (pages 435–438)

      S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, E. N. Mokhov, A. D. Roenkov, M. G. Ramm and Yu. A. Vodakov

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<435::AID-PSSA435>3.0.CO;2-M

    83. Modeling Study of Hydride Vapor Phase Epitaxy of GaN (pages 439–442)

      S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, B. Beaumont, G. Nataf, P. Gibart, M. Heuken, H. Jürgensen and A. Krishnan

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<439::AID-PSSA439>3.0.CO;2-6

    84. MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates (pages 443–446)

      C. R. Miskys, M. K. Kelly, O. Ambacher and M. Stutzmann

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<443::AID-PSSA443>3.0.CO;2-Q

    85. Properties of Homoepitaxial and Heteroepitaxial GaN Layers Grown by Plasma-Assisted MBE (pages 447–452)

      M. A. Sánchez-García, F. B. Naranjo, J. L. Pau, A. Jiménez, E. Calleja, E. Muñoz, S. I. Molina, A. M. Sánchez, F. J. Pacheco and R. García

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<447::AID-PSSA447>3.0.CO;2-A

    86. Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE (pages 453–458)

      M. Albrecht, I. P. Nikitina, A. E. Nikolaev, Yu. V. Melnik, V. A. Dmitriev and H. P. Strunk

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<453::AID-PSSA453>3.0.CO;2-M

    87. Homoepitaxial Growth and Luminescence Characterization of GaN Epilayer by RF-MBE on MOCVD-Grown GaN Substrate (pages 459–463)

      S. Kurai, S. Kubo, T. Okazaki, S. Manabe, T. Sugita, A. Kawabe, Y. Yamada and T. Taguchi

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<459::AID-PSSA459>3.0.CO;2-Z

    88. Plasma-Assisted MBE Growth of GaN on HVPE-GaN Substrates (pages 465–468)

      A. Rinta-Möykky, P. Laukkanen, S. Lehkonen, S. Laaksonen, J. Dekker, A. Tukiainen, P. Uusimaa and M. Pessa

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<465::AID-PSSA465>3.0.CO;2-A

    89. Homoepitaxial GaN Layers Studied by Low-Energy Electron Microscopy, Atomic Force Microscopy and Transmission Electron Microscopy (pages 469–473)

      A. Pavlovska, V. M. Torres, J. L. Edwards, E. Bauer, David J. Smith, R. B. Doak, I. S. T. Tsong, D. B. Thomson and R. F. Davis

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<469::AID-PSSA469>3.0.CO;2-V

    90. Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides (pages 475–485)

      D. J. As and K. Lischka

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<475::AID-PSSA475>3.0.CO;2-6

    91. Microstructures of Cubic and Hexagonal GaN Grown on (0001) Sapphire by ECR-MBE with Various Electric Biases (pages 487–491)

      T. Araki, T. Minami and Y. Nanishi

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<487::AID-PSSA487>3.0.CO;2-V

    92. MOCVD Growth of Cubic Gallium Nitride: Effect of V/III Ratio (pages 493–496)

      M. Moret, S. Ruffenach-Clur, N. Moreaud, O. Briot, J. Calas and R. L. Aulombard

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<493::AID-PSSA493>3.0.CO;2-6

    93. Growth Control of Cubic GaN and GaAlN (GaInN) Alloys by RHEED Oscillations (pages 497–501)

      E. Martinez-Guerrero, F. Chabuel, D. Jalabert, B. Daudin, G. Feuillet, H. Mariette, P. Aboughé-nzé and Y. Monteil

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<497::AID-PSSA497>3.0.CO;2-R

    94. Preferential Growth Mode of Cubic GaN by Metalorganic Molecular Beam Epitaxy on Sapphire (0001) Substrates (pages 503–507)

      J. Suda, T. Kurobe, T. Masuda and H. Matsunami

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<503::AID-PSSA503>3.0.CO;2-1

    95. MOVPE Growth of High Quality Cubic GaN on GaAs: The Role of Growth Rates (pages 509–512)

      M. Funato, M. Ogawa, T. Ishido, Sz. Fujita and Sg. Fujita

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<509::AID-PSSA509>3.0.CO;2-E

    96. Substrate Misorientation Dependence of the Hexagonal Phase Inclusion in Cubic GaN Films Grown by Metalorganic Vapor Phase Epitaxy (pages 513–517)

      A. Nagayama, R. Katayama, N. Nakadan, K. Miwa, H. Yaguchi, J. Wu, K. Onabe and Y. Shiraki

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<513::AID-PSSA513>3.0.CO;2-Y

    97. Mixing Mechanism of h-GaN in c-GaN Growth on GaAs (001) Substrates (pages 519–524)

      A. Hashimoto, H. Wada, T. Ueda, Y. Nishio, A. Masuda and A. Yamamoto

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<519::AID-PSSA519>3.0.CO;2-A

    98. Influence of MBE Growth Temperature on the Properties of Cubic GaN Grown Directly on GaAs Substrates (pages 525–528)

      A. Georgakilas, M. Androulidaki, K. Tsagaraki, K. Amimer, G. Constantinidis, N. T. Pelekanos, M. Calamiotou, Zs. Czigany and B. Pecz

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<525::AID-PSSA525>3.0.CO;2-M

    99. Growth of InGaN Alloy on Cubic GaN by Metalorganic Vapor-Phase Epitaxy (pages 529–534)

      A. Nakadaira and H. Tanaka

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<529::AID-PSSA529>3.0.CO;2-6

    100. Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth (pages 535–543)

      K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika and T. Maeda

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO;2-I

    101. Pendeo-Epitaxy versus Lateral Epitaxial Overgrowth of GaN: A Comparative Study via Finite Element Analysis (pages 545–551)

      T. S. Zheleva, W. M. Ashmawi and K. A. Jones

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<545::AID-PSSA545>3.0.CO;2-E

    102. Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy (pages 553–556)

      Y. Kawaguchi, Y. Honda, Y. Yamaguchi, N. Sawaki and K. Hiramatsu

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<553::AID-PSSA553>3.0.CO;2-I

    103. Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy (pages 557–560)

      Jun Wu, M. Kudo, A. Nagayama, H. Yaguchi, K. Onabe and Y. Shiraki

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<557::AID-PSSA557>3.0.CO;2-2

    104. Influence of Ambient Gas on the Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy (pages 561–565)

      Y. Kawaguchi, S. Nambu, M. Yamaguchi, N. Sawaki, H. Miyake, K. Hiramatsu, K. Tsukamoto, N. Kuwano and K. Oki

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<561::AID-PSSA561>3.0.CO;2-M

    105. A Two-Step Method for Epitaxial Lateral Overgrowth of GaN (pages 567–571)

      B. Beaumont, V. Bousquet, P. Vennéguès, M. Vaille, A. Bouillé, P. Gibart, S. Dassonneville, A. Amokrane and B. Sieber

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<567::AID-PSSA567>3.0.CO;2-Z

    106. Growth of High Quality, MOCVD Grown Ga-Polar GaN Layers on GaN Substrates after Novel Reactive Ion Etching (pages 573–577)

      J. L. Weyher, A. R. A. Zauner, P. D. Brown, F. Karouta, A. Barcz, M. Wojdak and S. Porowski

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<573::AID-PSSA573>3.0.CO;2-A

    107. Growth of Polycrystalline GaN on Silicon (001) Substrates by RF Plasma Chemical Vapor Deposition with ZnO Buffer Layer (pages 579–582)

      D. C. Park, Sz. Fujita and Sg. Fujita

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<579::AID-PSSA579>3.0.CO;2-N

    108. The Application of a Low Temperature GaN Buffer Layer to Thick GaN Film Growth on ZnO/Si Substrate (pages 583–587)

      J. W. Lee, S. W. Park and J. B. Yoo

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<583::AID-PSSA583>3.0.CO;2-6

    109. MOCVD Growth of GaN on LiAlO2(100) Substrates (pages 589–593)

      Ke Xu, Jun Xu, Peizhen Deng, Rongsheng Qiu and Zujie Fang

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<589::AID-PSSA589>3.0.CO;2-J

    110. A Comparative Study of MOVPE Growth of InN on GaAs(111) Substrates Using a Nitrided or Grown GaN Buffer Layer (pages 595–598)

      A. Yamamoto, M. Adachi, T. Arita, T. Sugiura and A. Hashimoto

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<595::AID-PSSA595>3.0.CO;2-V

    111. High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer (pages 599–603)

      H. Ishikawa, G. Y. Zhao, N. Nakada, T. Egawa, T. Soga, T. Jimbo and M. Umeno

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<599::AID-PSSA599>3.0.CO;2-F

    112. MOCVD Growth and Characterization of GaN Films with Composite Intermediate Layer Buffer on Si Substrate (pages 605–609)

      X. Zhang, S. J. Chua, Z. C. Feng, J. Chen and J. Lin

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<605::AID-PSSA605>3.0.CO;2-Q

    113. High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates (pages 611–614)

      A. Strittmatter, A. Krost, J. Bläsing and D. Bimberg

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<611::AID-PSSA611>3.0.CO;2-1

    114. Direct Evidence of Spontaneous Polarization Effect in GaN Grown on SiC(0001): Heterojunction Electronic Properties (pages 615–619)

      R. Lantier, F. Boscherini, A. Rizzi, F. D'Acapito, S. Mobilio and H. Lüth

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<615::AID-PSSA615>3.0.CO;2-M

    115. Epitaxial Growth of GaN, AlN and InN: 2D/3D Transition and Surfactant Effects (pages 621–627)

      B. Daudin, G. Feuillet, Guido Mula, H. Mariette, J. L. Rouviére, N. Pelekanos, G. Fishman, C. Adelmann and J. Simon

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<621::AID-PSSA621>3.0.CO;2-Y

    116. MOCVD Growth and Optical Characterization of Stacked InGaN Quantum Dots for Laser Applications (pages 629–633)

      K. Tachibana, T. Someya and Y. Arakawa

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<629::AID-PSSA629>3.0.CO;2-2

    117. Growth and Optical Characterization of InGaN Quantum Dots Resulting from a 2D–3D Transition (pages 639–642)

      C. Adelmann, J. Simon, N. T. Pelekanos, Y. Samson, G. Feuillet and B. Daudin

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<639::AID-PSSA639>3.0.CO;2-Z

    118. New Pretreatment Method of Sapphire for GaN Deposition (pages 643–648)

      D. Byun, H.-J. Kim, C. H. Hong, C.-S. Park, G. Kim, S.-K. Koh, W.-K. Choi and D.-W. Kum

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<643::AID-PSSA643>3.0.CO;2-I

    119. Interface Treatment of GaN/InGaN-Multi Quantum Well Structures Grown in Production Type MOVPE Systems (pages 649–654)

      H. Protzmann, M. Lünenbürger, J. Bläsing, A. Krost, M. Heuken and H. Jürgensen

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<649::AID-PSSA649>3.0.CO;2-V

    120. Influence of the GaN Seed Layer and Growth Parameters on Selective Epitaxy of GaN by HVPE (pages 655–659)

      O. Parillaud, V. Wagner, H. J. Bühlmann and M. Ilegems

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<655::AID-PSSA655>3.0.CO;2-6

    121. Strain Relaxation in GaN Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy (pages 661–664)

      R. Seitz, T. Monteiro, E. Pereira and M. Di Forte-Poisson

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<661::AID-PSSA661>3.0.CO;2-I

    122. Possibility of Strain Control in AlN Layer Grown by MOVPE on (0001) 6H-SiC with GaN/AlN Buffer (pages 665–669)

      M. Kurimoto, T. Nakada, Y. Ishihara, M. Shibata, T. Takano, J. Yamamoto, T. Honda and H. Kawanishi

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<665::AID-PSSA665>3.0.CO;2-2

    123. X-Ray Photoelectron Spectroscopic Investigation of the GaAs Nitridation Mechanism with an ECR Plasma Source (pages 671–676)

      M. Sauvage-Simkin, Y. Garreau, A. Barski, R. Langer, D. Cvetko, F. Floreano, R. Gotter, A. Santaniello and A. Verdini

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<671::AID-PSSA671>3.0.CO;2-E

    124. Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers (pages 677–681)

      S. Haffouz, B. Beaumont, P. Vennéguès and P. Gibart

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<677::AID-PSSA677>3.0.CO;2-R

    125. The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers (pages 683–687)

      J. Salzman, C. Uzan-Saguy, B. Meyler and R. Kalish

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<683::AID-PSSA683>3.0.CO;2-2

    126. Evidences for the Existence of a High-Carrier-Density Layer near Undoped-GaN/α-Al2O3 Substrate Interface (pages 689–692)

      A. Yamamoto, K. Azuma, K. Ueno, Y. Tsuji and A. Hashimoto

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<689::AID-PSSA689>3.0.CO;2-F

    127. Transport and Reaction Behaviors of Precursors during Metalorganic Vapor Phase Epitaxy of Gallium Nitride (pages 693–698)

      Jingxi Sun, J. M. Redwing and T. F. Kuech

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<693::AID-PSSA693>3.0.CO;2-Z

    128. Quantum Chemical Studies of Gas Phase Reactions between TMA, TMG, TMI and NH3 (pages 699–703)

      A. Tachibana, O. Makino, S. Tanimura, H. Tokunaga, N. Akutsu and K. Matsumoto

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<699::AID-PSSA699>3.0.CO;2-B

    129. Growth of Boron Nitride Thin Films on Silicon Substrates Using New Organoboron Precursors (pages 705–710)

      J.-H. Boo, C. Rohr and W. Ho

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<705::AID-PSSA705>3.0.CO;2-M

    130. Growth of AlN and GaN Thin Films on Si(100) Using New Single Molecular Precursors by MOCVD Method (pages 711–717)

      J.-H. Boo, S.-B. Lee, Y.-S. Kim, J. T. Park, K.-S. Yu and Y. Kim

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<711::AID-PSSA711>3.0.CO;2-Y

    131. RHEED Studies of Group III-Nitrides Grown by MBE (pages 723–726)

      C. T. Foxon, C. S. Davis, S. V. Novikov, O. H. Hughes, T. S. Cheng, D. Korakakis, N. J. Jeffs, I. Grzegory and S. Porowski

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<723::AID-PSSA723>3.0.CO;2-M

    132. In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors (pages 727–731)

      M. Lünenbürger, H. Protzmann, M. Heuken and H. Jürgensen

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<727::AID-PSSA727>3.0.CO;2-6

    133. Remote Plasma MOCVD Growth and Processing of GaN: A Study by Real Time Ellipsometry (pages 733–738)

      M. Losurdo, P. Capezzuto and G. Bruno

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<733::AID-PSSA733>3.0.CO;2-I

    134. The Reactive Ion Etching of Gallium Nitride by Methylchloride/Hydrogen (pages 739–742)

      M. Dineen, H. Thomas, B. Humphreys and S. G. McMeekin

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<739::AID-PSSA739>3.0.CO;2-V

    135. High Etch Rate Gallium Nitride Processing Using an Inductively Coupled Plasma Source (pages 743–746)

      M. E. Ryan, A. C. Camacho and J. K. Bhardwaj

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<743::AID-PSSA743>3.0.CO;2-E

    136. Visible Light Control by GaN Photonic Band Gaps (pages 747–749)

      A. Barra, D. Cassagne and C. Jouanin

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<747::AID-PSSA747>3.0.CO;2-Z

    137. GaN Cleaning by Ga Deposition, Reduction and Re-Evaporation: An SXPS Study (pages 751–754)

      T. G. G. Maffeis, S. A. Clark, P. R. Dunstan, S. P. Wilks, D. A. Evans, F. Peiro, H. Riechert and P. J. Parbrook

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<751::AID-PSSA751>3.0.CO;2-I

    138. Chemical and Complementary Role of Fluorine in a Chlorine-Based Reactive Ion Etching of GaN (pages 755–758)

      F. Karouta, B. Jacobs, O. Schoen and M. Heuken

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<755::AID-PSSA755>3.0.CO;2-2

    139. The Influence of the Annealing Ambient on Strain and Doping in GaN during High-Temperature Processing (pages 759–762)

      M. Kuball, J. M. Hayes, A. Bell, I. Harrison, D. Korakakis and C. T. Foxon

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<759::AID-PSSA759>3.0.CO;2-N

    140. Reduction of Ohmic Contact Resistivity on p-Type GaN by Surface Treatment (pages 763–766)

      J.-L. Lee, J. K. Kim, J. W. Lee, Y. J. Park and T. Kim

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<763::AID-PSSA763>3.0.CO;2-6

    141. The Microstructure of Ti/Al and TiN Ohmic Contacts to Gallium Nitride (pages 767–771)

      P. Ruterana, G. Nouet, Th. Kehagias, Ph. Komninou, Th. Karakostas, M. A. di Forte Poisson, F. Huet and H. Morkoc

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<767::AID-PSSA767>3.0.CO;2-R

    142. The Effect of Heat Treatment on Ni/Au Ohmic Contacts to p-Type GaN (pages 773–777)

      Li-Chien Chen, Jin-Kuo Ho, Fu-Rong Chen, Ji-Jung Kai, Li Chang, Chang-Shyang Jong, Chien C. Chiu, Chao-Nien Huang and Kwang-Kuo Shih

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<773::AID-PSSA773>3.0.CO;2-2

    143. The Influence of Pt in a Ti—Al–Pt–Au Ohmic Contact on n-Type GaN (pages 779–782)

      Z. Kachwalla, J. W. Wiggins, S. J. Chua and W. Wang

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<779::AID-PSSA779>3.0.CO;2-F

    144. Ohmic Heating of InGaN LEDs during Operation: Determination of the Junction Temperature and Its Influence on Device Performance (pages 783–786)

      V. Schwegler, S. S. Schad, C. Kirchner, M. Seyboth, M. Kamp, K. J. Ebeling, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, U. Stempfle, A. Link, W. Limmer and R. Sauer

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<783::AID-PSSA783>3.0.CO;2-Z

    145. The Influence of Growth Conditions on the Electrical Properties of Magnesium-Doped GaN Grown by MOVPE (pages 787–792)

      B. Kuhn, M. Welsch, M. Kessler and F. Scholz

      Version of Record online: 22 NOV 1999 | DOI: 10.1002/(SICI)1521-396X(199911)176:1<787::AID-PSSA787>3.0.CO;2-J

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