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Original Paper
Present Status of InGaN-Based Laser Diodes
Article first published online: 22 NOV 1999
DOI: 10.1002/(SICI)1521-396X(199911)176:1<15::AID-PSSA15>3.0.CO;2-6
© 1999 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany
1862-6319/asset/cover.gif?v=1&s=53003db56679887cfe4b0b6e74b0766cd9c3994f "physica status solidi (a)")
Additional Information
How to Cite
Nakamura, S. (1999), Present Status of InGaN-Based Laser Diodes. physica status solidi (a), 176: 15–22. doi: 10.1002/(SICI)1521-396X(199911)176:1<15::AID-PSSA15>3.0.CO;2-6
Publication History
- Issue published online: 22 NOV 1999
- Article first published online: 22 NOV 1999
- Manuscript Received: 4 JUL 1999
- Abstract
- References
- Cited By
Abstract
A violet InGaN multi-quantum-well (MQW)/GaN/AlGaN separate-confinement-heterostructure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The smallest aspect ratio of the far-field pattern was 1.6. The wavelength drift caused by the temperature change was estimated to be 0.06 nm/K. The lifetime of the LDs at a constant output power of 5 mW was more than 1900 h under CW operation at an ambient temperature of 50 °C. That at a constant output power of 30 mW was more than 400 h under CW operation at an ambient temperature of 60 °C.