GaN Derived from Carbodiimide-Based Polymeric Precursors (pages 1502–1504)
D. Rodewald, J. Bill, U. Beck, M. Puchinger, T. Wagner, A. Greiner and F. Aldinger
Article first published online: 8 DEC 1999 | DOI: 10.1002/(SICI)1521-4095(199912)11:18<1502::AID-ADMA1502>3.0.CO;2-U
Blue and green light-emitting diodes and laser diodes are often fabricated using semiconducting GaN. Here polymers derived from gallium carbodiimide are used as precursors to crystalline GaN bulk materials and films, the transformation being achieved via thermolysis in ammonia gas. The Figure is a TEM image of GaN powder synthesized in this manner.