Chapter 4. Applications of Disordered Semiconductors in Modern Electronics: Selected Examples

  1. Sergei Baranovski Faculty
  1. Safa Kasap6,
  2. John Rowlands1,
  3. Kenkichi Tanioka2 and
  4. Arokia Nathan3

Published Online: 7 NOV 2006

DOI: 10.1002/0470095067.ch4

Charge Transport in Disordered Solids with Applications in Electronics

Charge Transport in Disordered Solids with Applications in Electronics

How to Cite

Kasap, S., Rowlands, J., Tanioka, K. and Nathan, A. (2006) Applications of Disordered Semiconductors in Modern Electronics: Selected Examples, in Charge Transport in Disordered Solids with Applications in Electronics (ed S. Baranovski), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/0470095067.ch4

Editor Information

  1. Physics and Material Sciences Center, Philipps University Marburg, Germany

Author Information

  1. 1

    University of Toronto and Sunnybrook Health Sciences Centre, 2075 Bayview Avenue, Toronto, M4N 3N5, Canada

  2. 2

    NHK Science and Technical Research Laboratories, Tokyo, 175 Japan

  3. 3

    University of Waterloo, Waterloo, Canada, currently on a sabbatical leave at the Center for Advanced Photonics and Electronics, Electrical Division, 9 JJ Thomson Avenue, Cambridge University, Cambridge CB3 OFA, UK

  4. 6

    University of Saskatchewan, Saskatoon, SK, S7N 5A9, Canada

Publication History

  1. Published Online: 7 NOV 2006
  2. Published Print: 11 AUG 2006

Book Series:

  1. Wiley Series in Materials for Electronic and Optoelectronic Applications

Book Series Editors:

  1. Dr Peter Capper5,
  2. Professor Safa Kasap6 and
  3. Professor Arthur Willoughby7

Series Editor Information

  1. 5

    SELEX Sensors and Airborne Systems Infrared Ltd, Southampton, UK

  2. 6

    University of Saskatchewan, Saskatoon, SK, S7N 5A9, Canada

  3. 7

    University of Southampton, Southampton, UK

ISBN Information

Print ISBN: 9780470095041

Online ISBN: 9780470095065

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Keywords:

  • charge carrier scattering;
  • ionization energy or EHP creation energy;
  • density of states (DOS);
  • electron–hole pairs (EHPs);
  • HARP (high-gain avalanche rushing amorphous photoconductor);
  • disordered semiconductor applications;
  • HARP-CMOS sensor;
  • active matrix organic light-emitting diode (AMOLED) display;
  • active matrix flat-panel imagers (AMFPIs)

Summary

This chapter contains sections titled:

  • Perspectives on Amorphous Semiconductors

  • Direct Conversion Digital X-ray Image Detectors

  • X-ray Photoconductors

  • Stabilized Amorphous Selenium (a-Se)

  • Avalanche Multiplication and Ultra-high-sensitive HARP Video Tube

  • Avalanche Multiplication in Amorphous Semiconductors

  • Future Imaging Applications with a-Se HARP

  • Hydrogenated Amorphous Silicon Thin-film Transistors

  • TFT Backplanes for Organic Light-emitting Diode Displays and Flat-panel X-ray Imagers

  • References