Chapter 1. Transistor and Component Models at Low and High Frequencies

  1. Jeremy Everard

Published Online: 22 NOV 2001

DOI: 10.1002/0470841753.ch1

Fundamentals of RF Circuit Design: with Low Noise Oscillators

Fundamentals of RF Circuit Design: with Low Noise Oscillators

How to Cite

Everard, J. (2001) Transistor and Component Models at Low and High Frequencies, in Fundamentals of RF Circuit Design: with Low Noise Oscillators, John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/0470841753.ch1

Author Information

  1. University of York, UK

Publication History

  1. Published Online: 22 NOV 2001

ISBN Information

Print ISBN: 9780471497936

Online ISBN: 9780470841754

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Keywords:

  • equivalent circuit models;
  • linear and non-linear models;
  • bipolar transistors;
  • FETs;
  • varactor diodes;
  • diode detectors;
  • chip components

Summary

Chapter 1 describes models for bipolar transistors, FETs, varactor diodes, diode detectors and passive components including resistors, capacitors and inductors. Bipolar transistor models are presented at low and high frequencies including: the variation of parameters with current; the generalised Miller effect; fT; S21; harmonic and intermodulation distortion. FETs are then described. Diode detectors are described with calculations of tangential sensitivity and demonstration of the square and linear law characteristics. Models and hence frequency response of chip components illustrating, for example, the effect of series resonance in capacitors and the change in impedance for resistors. Inductors and spirals are then described including a simple calculation of inductance from first principles.