Chapter 5. Silicon Field Emitter Arrays

  1. Wei Zhu Ph.D.
  1. Jonathan Shaw1 and
  2. Junji Itoh2

Published Online: 15 APR 2002

DOI: 10.1002/0471224332.ch5

Vacuum Microelectronics

Vacuum Microelectronics

How to Cite

Shaw, J. and Itoh, J. (2001) Silicon Field Emitter Arrays, in Vacuum Microelectronics (ed W. Zhu), John Wiley & Sons, Inc., New York, USA. doi: 10.1002/0471224332.ch5

Editor Information

  1. Bell Laboratories—Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974, USA

Author Information

  1. 1

    Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, District of Columbia 20375-5347

  2. 2

    National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan

Publication History

  1. Published Online: 15 APR 2002
  2. Published Print: 1 OCT 2001

ISBN Information

Print ISBN: 9780471322443

Online ISBN: 9780471224334



  • silicon field emitter array;
  • orientation-dependent etching;
  • oxidation sharpening;
  • free electron theory of field emission;
  • emission energy distribution;
  • surface chemistry;
  • arc initiation;
  • local circuit elements;
  • diode (or p-n junction) elements;
  • transistor (MOSFET) structures;
  • vertical transistor structure


Chapter 5 discusses silicon field emitter arrays (FEA) and their fabrication, emission characteristics and various circuit elements that are made possible with the semiconducting FEA material. It also examines some practical issues concerning the stability and reliability of silicon field emitter arrays.