Standard Article

Simulation of Chemical Vapor Deposition Processes

Computation and Theoretical Methods

  1. Chris R. Kleijn1,
  2. Carlo Cavallotti2

Published Online: 12 OCT 2012

DOI: 10.1002/0471266965.com016.pub2

Characterization of Materials

Characterization of Materials

How to Cite

Kleijn, C. R. and Cavallotti, C. 2012. Simulation of Chemical Vapor Deposition Processes. Characterization of Materials. 1–19.

Author Information

  1. 1

    Delft University of Technology, Delft, The Netherlands

  2. 2

    Politecnico di Milano, Milan, Italy

Publication History

  1. Published Online: 12 OCT 2012

Abstract

Chemical vapor deposition (CVD) is probably the most used technology for the growth of high quality thin solid films. It is in fact widely used in the electronic and optoelectronic industry to deposit semiconducting, conducting, and insulating films as well as in the mechanical industry to grow anticorrosion and antiwear coatings on tools and equipment. The success of CVD is determined by its capability to couple reasonably high deposition rates while maintaining high-level structural and morphological properties of the grown material. The success of CVD processes as well as the continuous increase of deposition rates and of the range of materials that can be grown through this technique relies in part on the availability of powerful modeling tools that simulate the growth process. In the present article, the status of the art of modeling CVD processes is reviewed. Particular emphasis is placed on the multiscale nature of this theoretical field, which encompasses phenomena with characteristic length scales that go from 10–10 to 100 m. In this light, advantages and disadvantages related to the use of modeling tools apt to treat specific length and time scales phenomena relevant to CVD are reviewed and discussed.

Keywords:

  • chemical vapor deposition;
  • surface chemistry;
  • gas phase chemistry;
  • plasma;
  • multiscale models