Chapter 1. Power Device Evolution and the Advent of IGBT

  1. Vinod Kumar Khanna

Published Online: 28 JAN 2005

DOI: 10.1002/047172291X.ch1

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design

How to Cite

Khanna, V. K. (2003) Power Device Evolution and the Advent of IGBT, in Insulated Gate Bipolar Transistor IGBT Theory and Design, John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/047172291X.ch1

Author Information

  1. Pilani, India

Publication History

  1. Published Online: 28 JAN 2005
  2. Published Print: 5 AUG 2003

ISBN Information

Print ISBN: 9780471238454

Online ISBN: 9780471722915

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Keywords:

  • power semiconductor devices;
  • perfect semiconductor switch;
  • silicon-controlled rectifiers

Summary

  • Introductory Background

  • Insulated Gate Bipolar Transistor

  • Advantages and Shortcomings of IGBT

  • IGBT Structure and Fabrication

  • Equivalent Circuit Representations

  • Principle of Operation and Charge-Control Phenomena

  • Circuit Modeling

  • Packaging Options for IGBTs

  • Handling Precautions of IGBTs

  • IGBT Gate Driving Circuits

  • IGBT Protection

  • Summary and Trends

  • Review Exercises

  • References