Chapter 2. IGBT Fundamentals and Status Review

  1. Vinod Kumar Khanna

Published Online: 28 JAN 2005

DOI: 10.1002/047172291X.ch2

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design

How to Cite

Khanna, V. K. (2003) IGBT Fundamentals and Status Review, in Insulated Gate Bipolar Transistor IGBT Theory and Design, John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/047172291X.ch2

Author Information

  1. Pilani, India

Publication History

  1. Published Online: 28 JAN 2005
  2. Published Print: 5 AUG 2003

ISBN Information

Print ISBN: 9780471238454

Online ISBN: 9780471722915

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Keywords:

  • back-to-back PN junctions;
  • safe operating area;
  • breakdown voltages

Summary

  • Device Structures

  • Device Operational Modes

  • Static Characteristics of IGBT

  • Switching Behavior of IGBT

  • Safe Operating Area (SOA)

  • High-Temperature Operation

  • Radiation Effects

  • Trench-Gate IGBT and Injection-Enhanced IGBT (IEGT)

  • Self-Clamped IGBT

  • Ratings and Applications of IGBT

  • Summary and Trends

  • Review Exercises

  • References