Chapter 3. MOS Components of IGBT

  1. Vinod Kumar Khanna

Published Online: 28 JAN 2005

DOI: 10.1002/047172291X.ch3

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design

How to Cite

Khanna, V. K. (2003) MOS Components of IGBT, in Insulated Gate Bipolar Transistor IGBT Theory and Design, John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/047172291X.ch3

Author Information

  1. Pilani, India

Publication History

  1. Published Online: 28 JAN 2005
  2. Published Print: 5 AUG 2003

ISBN Information

Print ISBN: 9780471238454

Online ISBN: 9780471722915

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Keywords:

  • bipolar transistor physics;
  • MOSFET foundation;
  • trench-gate structures

Summary

  • General Considerations

  • MOS Structure Analysis and Threshold Voltage

  • Current–Voltage Characteristics of MOSFET; Transconductance and Drain Resistance

  • On-Resistance Model of DMOSFET and UMOSFET

  • MOSFET Equivalent Circuit and Switching Times

  • Safe Operating Area (SOA)

  • Neutron and Gamma-Ray Damage Effects

  • Thermal Behavior of MOSFET

  • DMOSFET Cell Windows and Topological Designs

  • Summary and Trends

  • Review Exercises

  • References

  • Appendix 3.1: Derivation of Eqs. (3.2a) and (3.2b)

  • Appendix 3.2: Derivation of Eq. (3.7)

  • Appendix 3.3: Derivation of the Equations for Bulk Semiconductor Potential ψB and the Surface Charge Qs at the Point of Transition into Strong Inversion

  • Appendix 3.4: Derivation of Eqs. (3.33)–(3.36)

  • Appendix 3.5: Derivation of Eq. (3.39)

  • Appendix 3.6: Derivation of Eq. (3.49)