Chapter 4. Bipolar Components of IGBT

  1. Vinod Kumar Khanna

Published Online: 28 JAN 2005

DOI: 10.1002/047172291X.ch4

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design

How to Cite

Khanna, V. K. (2003) Bipolar Components of IGBT, in Insulated Gate Bipolar Transistor IGBT Theory and Design, John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/047172291X.ch4

Author Information

  1. Pilani, India

Publication History

  1. Published Online: 28 JAN 2005
  2. Published Print: 5 AUG 2003

ISBN Information

Print ISBN: 9780471238454

Online ISBN: 9780471722915

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Keywords:

  • bipolar property;
  • auger recombination lifetime;
  • saturation voltage

Summary

  • PN Junction Diode

  • P-I-N Rectifier

  • Bipolar Junction Transistor

  • Thyristor

  • Junction Field-Effect Transistor (JFET)

  • Summarizing Remarks

  • Review Exercises

  • References

  • Appendix 4.1 Drift and Diffusion Current Densities

  • Appendix 4.2 Einstein's Equation

  • Appendix 4.3 Continuity Equation and Its Solution

  • Appendix 4.4 Solution of the Continuity Equation (4.41)

  • Appendix 4.5 Derivation of Eq. (4.50)

  • Appendix 4.6 Derivation of Current Density Equations (4.55) and (4.56)

  • Appendix 4.7 Transistor Terminal Currents [Eqs. (4.57) and (4.58)]

  • Appendix 4.8 Common-Base Current Gain αT [Eq. (4.63)]