Chapter 5. Physics and Modeling of IGBT

  1. Vinod Kumar Khanna

Published Online: 28 JAN 2005

DOI: 10.1002/047172291X.ch5

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design

How to Cite

Khanna, V. K. (2003) Physics and Modeling of IGBT, in Insulated Gate Bipolar Transistor IGBT Theory and Design, John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/047172291X.ch5

Author Information

  1. Pilani, India

Publication History

  1. Published Online: 28 JAN 2005
  2. Published Print: 5 AUG 2003

ISBN Information

Print ISBN: 9780471238454

Online ISBN: 9780471722915

SEARCH

Keywords:

  • isothermal simulations;
  • diode knee;
  • IGBT modeling

Summary

  • Pin Rectifier-DMOSFET Model of IGBT

  • Bipolar Transistor–DMOSFET Model of IGBT by Extension of PIN Rectifier–DMOSFET Model

  • Bipolar Transistor–DMOSFET Model of IGBT with Device–Circuit Interactions

  • Concluding Comments

  • Review Exercises

  • References

  • Appendix 5.1 Solution of Eq. (5.8)

  • Appendix 5.2 Derivation of Eqs. (5.33) and (5.34)

  • Appendix 5.3 Derivation of Eq. (5.35)

  • Appendix 5.4 Derivation of Eq. (5.38) [Solution of Eq. (5.35)]

  • Appendix 5.5 Derivation of Eqs. (5.40)–(5.42)

  • Appendix 5.6 Derivation of Eq. (5.44)

  • Appendix 5.7 Derivation of Eqs. (5.81) and Construction of Equivalent Conductive Network for 1-D Linear Element