Chapter 7. Design Considerations of IGBT Unit Cell

  1. Vinod Kumar Khanna

Published Online: 28 JAN 2005

DOI: 10.1002/047172291X.ch7

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design

How to Cite

Khanna, V. K. (2003) Design Considerations of IGBT Unit Cell, in Insulated Gate Bipolar Transistor IGBT Theory and Design, John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/047172291X.ch7

Author Information

  1. Pilani, India

Publication History

  1. Published Online: 28 JAN 2005
  2. Published Print: 5 AUG 2003

ISBN Information

Print ISBN: 9780471238454

Online ISBN: 9780471722915

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Keywords:

  • abrupt junction;
  • mesh selection;
  • minority-carrier lifetime

Summary

  • Semiconductor Selection and Vertical Structure Design

  • IGBT Design by Analytical Calculations and Numerical Simulations

  • Optimization of N-Buffer Layer Structure

  • Field Ring and Field Plate Termination Design

  • Surface Ion-Implanted Edge Termination

  • Reduced Surface Electric Field (RESURF) Concept For Breakdown Voltage Enhancement in Lateral IGBT

  • Concluding Comments

  • Review Exercises

  • References

  • Appendix 7.1 Multiplication Coefficient M

  • Appendix 7.2 VBR Equation

  • Appendix 7.3 Avalanche Breakdown Voltage (VB)

  • Appendix 7.4 Punchthrough Voltage (VPT)

  • Appendix 7.5 BVCYL/BVPP Equation