physica status solidi (b)
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Empirical Pseudo-Potential Calculations in GaAs1—xNx and AlAs1—xNx Ordered Alloys

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Abstract

We have performed an empirical pseudo-potential study of the fundamental excitation in ordered alloys of III–V semiconductors GaAs1—xNx and AlAs1—xNx. Various quantities including the bowing parameters of the fundamental gaps, the energy levels, the charge densities, the ionicity character, the refractive index and the transverse effective charge are calculated.

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DOI

10.1002/1521-3951(199705)201:1<117::AID-PSSB117>3.0.CO;2-8

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Copyright © 1997 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany

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  • Number of times cited: 10
  1. 1Y Oussaifi, A Ben Fredj, M Debbichi, N Bouarissa, M Said, Elastic properties and optical phonon frequencies of zinc-blende ScxGa1−xN, Semiconductor Science and Technology, 2007, 22, 6, 641CrossRef
  2. 2M. Debbichi, A. Ben Fredj, A. Bhouri, N. Bouarissa, M. Said, Effect of nitrogen concentration on the electronic and vibrational properties of zinc-blende InNxP1-x(x < 0.01), The European Physical Journal B, 2006, 51, 1, 17CrossRef
  3. 3S. Ben Bouzid, F. Bousbih, R. Chtourou, E. Tounié, Band gap energy, nitrogen localized states and GaN-like phonon in heavily doped GaAsN grown by molecular beam epitaxy, Solid State Communications, 2004, 130, 1-2, 121CrossRef
  4. 4S.R. Jin, S.J. Sweeney, S. Tomic, A.R. Adams, H. Riechert, High-pressure studies of recombination mechanisms in 1.3-μm GaInNAs quantum-well lasers, IEEE Journal of Selected Topics in Quantum Electronics, 2003, 9, 5, 1196CrossRef
  5. 5B. Bouhafs, F. Litimein, Z. Dridi, P. Ruterana, Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN, physica status solidi (b), 2003, 236, 1, 61Wiley Online Library
  6. 6Yong Zhang, A. Mascarenhas, J. F. Geisz, H. P. Xin, C. W. Tu, Discrete and continuous spectrum of nitrogen-induced bound states in heavily dopedGaAs1−xNx, Physical Review B, 2001, 63, 8CrossRef
  7. 7J A Chisholm, P D Bristowe, The electrical activity of GaN doped with transition metal impurities, Modelling and Simulation in Materials Science and Engineering, 2001, 9, 4, 249CrossRef
  8. 8N. Benosman, N. Amrane, H. Aourag, Calculation of electronic and optical properties of zinc-blende ZnxCd1−xSe, Physica B: Condensed Matter, 2000, 275, 4, 316CrossRef
  9. 9S. Meçabih, N. Amrane, B. Belgoumène, H. Aourag, Opto-electronic properties of the ternary alloy Hg1−xCdxTe, Physica A: Statistical Mechanics and its Applications, 2000, 276, 3-4, 495CrossRef
  10. 10N. Bouarissa, Effects of compositional disorder upon electronic and lattice properties of GaxIn1−xAs, Physics Letters A, 1998, 245, 3-4, 285CrossRef