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Research Article
Theory of Electron Resonant Tunnelling through Localized States in the Presence of Hot Acoustic Phonons
Article first published online: 16 NOV 2001
DOI: 10.1002/1521-3951(199711)204:1<438::AID-PSSB438>3.0.CO;2-J
Copyright © 1997 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany
1521-3951/asset/cover.gif?v=1&s=d9a8d30bfa9cdf3814e5333423d066799135fac6 "physica status solidi (b)")
Additional Information
How to Cite
Král, P., Sheard, F. W., Ouali, F. F. and Challis, L. J. (1997), Theory of Electron Resonant Tunnelling through Localized States in the Presence of Hot Acoustic Phonons. Phys. Status Solidi B, 204: 438–441. doi: 10.1002/1521-3951(199711)204:1<438::AID-PSSB438>3.0.CO;2-J
Publication History
- Issue published online: 16 NOV 2001
- Article first published online: 16 NOV 2001
- Manuscript Received: 1 AUG 1997
- Abstract
- References
- Cited By
Abstract
We use nonequilibrium Green functions to consistently describe electron resonant tunnelling through localized states in the presence of hot phonons. Thereby we are able to study in details effects related to nonequilibrium steady-states of such systems in the presence of dc bias and hot phonon fields. The method is applied to a model of a delta-doped GaAs/AlGaAs double barrier heterostructure, where simulation of the hot phonons is performed by the change of their distribution function. The results are in qualitative agreement with the recent experiments performed on similar systems.