physica status solidi (b)

Cover image for physica status solidi (b)

July 1997

Volume 202, Issue 1

Pages 5–642

    1. Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment (pages 5–33)

      W. R. L. Lambrecht, S. Limpijumnong, S. N. Rashkeev and B. Segall

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<5::AID-PSSB5>3.0.CO;2-L

    2. Polytypism and Properties of Silicon Carbide (pages 35–62)

      F. Bechstedt, P. Käckell, A. Zywietz, K. Karch, B. Adolph, K. Tenelsen and J. Furthmüller

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<35::AID-PSSB35>3.0.CO;2-8

    3. On the Band Gap Variation in SiC Polytypes (pages 63–79)

      W. van Haeringen, P. A. Bobbert and W. H. Backes

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<63::AID-PSSB63>3.0.CO;2-E

    4. Shallow Donor Levels and the Conduction Band Edge Structures in Polytypes of SiC (pages 81–106)

      An-Ban Chen and P. Srichaikul

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<81::AID-PSSB81>3.0.CO;2-M

    5. Global Band Structure and Near-Band-Edge States (pages 107–123)

      G. Wellenhofer and U. Rössler

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<107::AID-PSSB107>3.0.CO;2-9

    6. First-Principles Calculations of Impurity States in 3C-SiC (pages 125–135)

      A. Fukumoto

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<125::AID-PSSB125>3.0.CO;2-9

    7. Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype (pages 137–148)

      G. Augustine, McD. Hobgood, V. Balakrishna, G. Dunne and R. H. Hopkins

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<137::AID-PSSB137>3.0.CO;2-Y

    8. SiC Seeded Crystal Growth (pages 149–162)

      R. C. Glass, D. Henshall, V. F. Tsvetkov and C. H. Carter Jr.

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<149::AID-PSSB149>3.0.CO;2-M

    9. Modified-Lely SiC Crystals Grown in [11-00] and [112-0] Directions (pages 163–175)

      J. Takahashi and N. Ohtani

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<163::AID-PSSB163>3.0.CO;2-1

    10. Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers (pages 177–200)

      Yu.A. Vodakov, A. D. Roenkov, M. G. Ramm, E. N. Mokhov and Yu.N. Makarov

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<177::AID-PSSB177>3.0.CO;2-I

    11. Simulation of Sublimation Growth of SiC Single Crystals (pages 201–220)

      S. Yu. Karpov, Yu. N. Makarov and M. S. Ramm

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<201::AID-PSSB201>3.0.CO;2-T

    12. Step-Controlled Epitaxial Growth of High-Quality SiC Layers (pages 247–262)

      T. Kimoto, A. Itoh and H. Matsunami

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<247::AID-PSSB247>3.0.CO;2-Q

    13. Homoepitaxial VPE Growth of SiC Active Layers (pages 263–279)

      A. A. Burk Jr. and L. B. Rowland

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<263::AID-PSSB263>3.0.CO;2-Y

    14. Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation (pages 281–304)

      R. Rupp, Yu.N. Makarov, H. Behner and A. Wiedenhofer

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<281::AID-PSSB281>3.0.CO;2-Y

    15. SiC Dopant Incorporation Control Using Site-Competition CVD (pages 305–320)

      D. J. Larkin

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<305::AID-PSSB305>3.0.CO;2-9

    16. Growth of SiC by “Hot-Wall” CVD and HTCVD (pages 321–334)

      O. Kordina, C. Hallin, A. Henry, J. P. Bergman, I. Ivanov, A. Ellison, N. T. Son and E. Janzén

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<321::AID-PSSB321>3.0.CO;2-H

    17. 3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates (pages 335–358)

      H. Nagasawa and K. Yagi

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<335::AID-PSSB335>3.0.CO;2-Y

    18. Heterointerface Control and Epitaxial Growth of 3C-SiC on Si by Gas Source Molecular Beam Epitaxy (pages 359–378)

      T. Fuyuki, T. Hatayama and H. Matsunami

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<359::AID-PSSB359>3.0.CO;2-A

    19. Homoepitaxial SiC Growth by Molecular Beam Epitaxy (pages 379–404)

      R. S. Kern, K. Järrendahl, S. Tanaka and R. F. Davis

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<379::AID-PSSB379>3.0.CO;2-2

    20. Simulations and Experiments of 3C-SiC/Si Heteroepitaxial Growth (pages 405–420)

      M. Kitabatake

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5

    21. Atomic and Electronic Structure of SiC Surfaces from ab-initio Calculations (pages 421–445)

      J. Pollmann, P. Krüger and M. Sabisch

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<421::AID-PSSB421>3.0.CO;2-D

    22. Structure and Properties of Cubic Silicon Carbide (100) Surfaces: A Review (pages 447–473)

      V. M. Bermudez

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<447::AID-PSSB447>3.0.CO;2-I

    23. Atomic Structure of Hexagonal SiC Surfaces (pages 475–499)

      U. Starke

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<475::AID-PSSB475>3.0.CO;2-E

    24. Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces (pages 501–528)

      P. Mårtensson, F. Owman and L. I. Johansson

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<501::AID-PSSB501>3.0.CO;2-H

    25. Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide (pages 529–548)

      J. A. Powell and D. J. Larkin

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<529::AID-PSSB529>3.0.CO;2-E

    26. Surface Studies on SiC as Related to Contacts (pages 549–580)

      M. J. Bozack

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<549::AID-PSSB549>3.0.CO;2-6

    27. The Physics of Ohmic Contacts to SiC (pages 581–603)

      J. Crofton, L. M. Porter and J. R. Williams

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<581::AID-PSSB581>3.0.CO;2-M

    28. A Review of SiC Reactive Ion Etching in Fluorinated Plasmas (pages 605–642)

      P. H. Yih, V. Saxena and A. J. Steckl

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-3951(199707)202:1<605::AID-PSSB605>3.0.CO;2-Y

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