physica status solidi (b)

Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Cover image for physica status solidi (b)

November 2000

Volume 222, Issue 1

Pages 5–404

    1. Impact of Research on Defects in Silicon on the Microelectronic Industry (pages 5–23)

      W. Bergholz and D. Gilles

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<5::AID-PSSB5>3.0.CO;2-L

    2. Activation Energies of Plasticity and Lattice Properties of Cubic Crystal Systems (pages 25–33)

      H. Siethoff

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<25::AID-PSSB25>3.0.CO;2-A

    3. Hardening by Thermal Vacancies in the B2 Region of the Fe–Al Phase Diagram (pages 35–39)

      P. Kratochvil, P. Hanus and Z. Novotná

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<35::AID-PSSB35>3.0.CO;2-8

    4. Latent Hardening of Germanium Crystals (pages 41–49)

      H. Alexander and J.L. Crawford

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<41::AID-PSSB41>3.0.CO;2-U

    5. Non-Planar Slip and Cross-Slip at the Onset of Plastic Deformation in Silicon (pages 51–62)

      F. Vallino, A. Jacques and A. George

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<51::AID-PSSB51>3.0.CO;2-S

    6. Low Temperature, High Stress Plastic Deformation of Semiconductors: The Silicon Case (pages 63–74)

      J. Rabier and J.L. Demenet

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<63::AID-PSSB63>3.0.CO;2-E

    7. The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals (pages 75–93)

      A.V. Samant, M.H. Hong and P. Pirouz

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<75::AID-PSSB75>3.0.CO;2-0

    8. Strain Induced Electronic Alterations of Dislocation Mobility GeSi Layers (pages 95–100)

      M. Albrecht and H.P. Strunk

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<95::AID-PSSB95>3.0.CO;2-X

    9. Atomistic Modeling of Misfit Dislocation Network Variants for Ge/Si(111) Interfaces (pages 101–109)

      M. Dornheim and H. Teichler

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<101::AID-PSSB101>3.0.CO;2-X

    10. Possible Polymerisation at Dislocations in C60 Crystals (pages 111–119)

      D.V. Dyachenko-Dekov, Yu.L. Iunin, A.N. Izotov, V.V. Kveder, R.K. Nikolaev, V.I. Orlov, Yu.A. Ossipyan, N.S. Sidorov and E.A. Steinman

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<111::AID-PSSB111>3.0.CO;2-T

    11. Special Defects in Quasicrystals (pages 121–132)

      C. Janot, L. Loreto and R. Farinato

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<121::AID-PSSB121>3.0.CO;2-P

    12. Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si (pages 133–140)

      R. Jones, B.J. Coomer, J.P. Goss, S. Öberg and P.R. Briddon

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<133::AID-PSSB133>3.0.CO;2-D

    13. About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation (pages 141–150)

      S. Pizzini, M. Acciarri, E. Leoni and A. Le Donne

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<141::AID-PSSB141>3.0.CO;2-H

    14. Mesoscopic Conductance Oscillations Associated with Dislocations in Semiconductors (pages 151–158)

      T. Figielski, T. Wosiński and A. Mąkosa

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<151::AID-PSSB151>3.0.CO;2-D

    15. Influence of Dislocations on I–V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC (pages 159–167)

      J.F. Barbot, C. Blanchard and J.L. Demenet

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<159::AID-PSSB159>3.0.CO;2-I

    16. Luminescence Studies on Plastic Stress Relaxation in ZnSe/GaAs(001) (pages 169–177)

      J. Schreiber, U. Hilpert, L. Höring, L. Worschech, B. König, W. Ossau, A. Waag and G. Landwehr

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<169::AID-PSSB169>3.0.CO;2-E

    17. Negative Charge Carrier Transport in Poly(methylmethacrylate-co-9-anthracenyl-methylmethacrylate) Thin Films (pages 179–183)

      Dongge Ma, M. Aguiar and I.A. Hümmelgen

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<179::AID-PSSB179>3.0.CO;2-A

    18. HREM Image Analysis of III–V Heterostructures Based on Neural Networks (pages 185–198)

      R. Hillebrand, H. Kirschner, P. Werner and U. Gösele

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<185::AID-PSSB185>3.0.CO;2-M

    19. Electron Energy-Loss Near-Edge Structure Studies of a Cu/(11-20)α-Al2O3 Interface (pages 199–211)

      C. Scheu, W. Stein and M. Rühle

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<199::AID-PSSB199>3.0.CO;2-2

    20. Two-Dimensional Mapping of pn Junctions by Electron Holography (pages 213–217)

      W.D. Rau, P. Schwander and A. Ourmazd

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<213::AID-PSSB213>3.0.CO;2-H

    21. On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing (pages 219–244)

      R. Falster, V.V. Voronkov and F. Quast

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<219::AID-PSSB219>3.0.CO;2-U

    22. Optical Beam Induced Current Investigations of Particle Detectors (pages 245–250)

      A. Castaldini, A. Cavallini and L. Polenta

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<245::AID-PSSB245>3.0.CO;2-Y

    23. Iridium-Related Deep Levels in n-Type Silicon (pages 251–260)

      J. Bollmann, S. Knack, J. Weber and ISOLDE collaboration

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<251::AID-PSSB251>3.0.CO;2-9

    24. Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers (pages 261–277)

      A.A. Istratov, C. Flink and E.R. Weber

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<261::AID-PSSB261>3.0.CO;2-5

    25. CEMS Study of the Interface Formation in the Fe–Si System during Pulsed Laser Deposition (pages 279–294)

      A. Zenkevitch, M. Fanciulli, G. Weyer and I. Khabelashvili

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<279::AID-PSSB279>3.0.CO;2-6

    26. Mixing and Silicide Formation during Xe-Ion Beam Irradiations of Ta/Si Bilayers (pages 295–302)

      S. Dhar, M. Milosavljevic, N. Bibic and K.P. Lieb

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<295::AID-PSSB295>3.0.CO;2-E

    27. Defects Due to Metal Silicide Precipitation in Microelectronic Device Manufacturing: The Unlovely Face of Transition Metal Silicides (pages 303–317)

      B.O. Kolbesen and H. Cerva

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<303::AID-PSSB303>3.0.CO;2-H

    28. Gettering of Diffused Au and of Cu and Ni Contamination in Silicon by Cavities Induced by High Energy He Implantation (pages 319–326)

      R. El Bouayadi, G. Regula, B. Pichaud, M. Lancin, CR. Dubois and E. Ntsoenzok

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<319::AID-PSSB319>3.0.CO;2-Q

    29. Phosphorus Diffusion Gettering of Platinum in Silicon: Formation of Near-Surface Precipitates (pages 327–336)

      M. Seibt, A. Döller, V. Kveder, A. Sattler and A. Zozime

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<327::AID-PSSB327>3.0.CO;2-U

    30. Investigation of Current Losses in Crystalline Silicon Solar Cells by a New Topographical Magnetic Field Technique (CASQ) (pages 337–351)

      J. Kabs and H.J. Möller

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<337::AID-PSSB337>3.0.CO;2-Q

    31. Precipitates in Ribbon Grown Solar Silicon (pages 353–365)

      H. Gottschalk

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<353::AID-PSSB353>3.0.CO;2-Y

    32. Extension of Hydrogen Passivation of Intragrain Defects and Grain Boundaries in Cast Multicrystalline Silicon (pages 367–378)

      O. Krüger, W. Seifert, M. Kittler and O.F. Vyvenko

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<367::AID-PSSB367>3.0.CO;2-E

    33. Oxygen-Related Defect Centers in Solar-Grade, Multicrystalline Silicon. A Reservoir of Lifetime Killers (pages 379–387)

      D. Karg, G. Pensl, M. Schulz, C. Hässler and W. Koch

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<379::AID-PSSB379>3.0.CO;2-2

    34. Improvements and Limits of the Open Circuit Voltage of mc-Silicon Solar Cells (pages 389–404)

      R. Schindler and W. Warta

      Article first published online: 27 OCT 2000 | DOI: 10.1002/1521-3951(200011)222:1<389::AID-PSSB389>3.0.CO;2-Z

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